SI1499DH-T1-E3

New Product Si1499DH Vishay Siliconix P-Channel 1.2-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.078 at VGS = - 4.5 V 0.095 at VGS = - 2.5 V -8 0.115 at VGS = - 1.8 V 0.153 at VGS = - 1.5 V 0.424 at VGS = - 1.2 V ID (A)c - 1.6 - 1.6 - 1.6 - 1.6 - 1.6b 10.5 nC Qg (Typ) FEATURES • TrenchFET® Power MOSFET • Ultra-Low On-Resistance APPLICATIONS • Load Switch for Portable Devices - Guaranteed Operation at VGS = 1.2 V Critical for Optimized Design and Longer Battery Life RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) S D 1 6 D Marking Code BI D 2 5 D Part # Code D P-Channel MOSFET XX YY Lot Traceability and Date Code G G 3 Top View 4 S Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C)a, b TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Currenta, b TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipationa, b TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit -8 ±5 -1.6c - 1.6c - 1.6a, b, c - 1.6a, b, c 6.5c - 1.6c - 1.3a, b 2.78 1.78 2.5a, b 1a, b - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, d t≤5s Steady State Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Package limited. d. Maximum under Steady State conditions is 125 °C/W. Document Number: 73338 S-80579-Rev. E, 17-Mar-08 www.vishay.com 1 Symbol RthJA RthJF Typical 60 34 Maximum 80 45 Unit °C/W Si1499DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = VGS, ID = ± 5 mA VDS = 0 V, VGS = ± 5 V VDS = - 8 V, VGS = 0 V VDS = - 8 V, VGS = 0 V, TJ = 55 °C VDS ≤ 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 2.0 A VGS = - 2.5 V, ID = - 1.9 A Drain-Source On-State Resistancea RDS(on) VGS = - 1.8 V, ID = - 0.8 A VGS = - 1.5 V, ID = - 0.5 A VGS = - 1.2 V, ID = - 0.100 A Forward Transconductancea gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb IF = - 2.0 A, di/dt = 100 A/µs, TJ = 25 °C IS = - 2.4 A, VGS = 0 V - 0.7 25 7 9 16 TC = 25 °C VDD = - 4 V, RL = 2 Ω ID ≅ - 2 A, VGEN = - 8 V, Rg = 1 Ω VDD = - 4 V, RL = 2 Ω ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω f = 1 MHz VDS = - 4 V, VGS = - 4.5 V, ID = - 1.6 A VDS = - 4 V, VGS = 0 V, f = 1 MHz VDS = - 4 V, ID = - 2.0 A 8 Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time - 1.6 - 6.5 - 1.2 38 11 A V ns nC ns 650 220 122 10.5 1.3 1.9 9.5 9 40 50 60 8 40 46 60 14 60 75 90 15 60 70 90 ns Ω 16 nC pF - 6.5 0.0622 0.078 0.094 0.118 0.078 0.095 0.115 0.153 0.424 S Ω - 0.35 - 0.55 ± 100 -1 - 10 -8 -9 - 2.2 - 0.8 V mV/°C V nA µA A Symbol Test Conditions Min Typ Max Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73338 S-80579-Rev. E, 17-Mar-08 Si1499DH Vishay Siliconix TYPICAL CHARACTERISTICS 10 25 °C, unless otherwise noted 10 TC = - 55 °C 8 I D - Drain Current (A) VGS = 5 thru 2 V I D - Drain Current (A) 8 25 °C 6 125 °C 4 6 1.5 V 4 2 1V 0 0.0 2 0.5 1.0 1.5 2.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.25 1000 Transfer Characteristics R DS(on) - On-Resistance (mΩ) 0.20 VGS = 1.5 V 0.15 VGS = 1.8 V 0.10 VGS = 2.5 V C - Capacitance (pF) 800 Ciss 600 400 Coss 0.05 200 VGS = 4.5 V 0 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 Crss 0.00 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 5 ID = 2 A 4 R DS(on) - On-Resistance (Normalized) 1.4 1.6 ID = 2 A Capacitance V GS - Gate-to-Source Voltage (V) VGS = 4.5 V 1.2 VGS = 2.5 V 1.0 3 VDS = 4 V 2 VDS = 5.6 V 1 0.8 0 0 2 4 6 8 10 12 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge Document Number: 73338 S-80579-Rev. E, 17-Mar-08 On-Resistance vs. Junction Temperature www.vishay.com 3 Si1499DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 R DS(on) - Drain-to-Source On-Resistance (Ω) 0.5 ID = 2 A 0.4 I S - Source Current (A) TJ = 150 °C 1 TJ = 25 °C 0.3 0.2 TJ = 125 °C 0.1 TJ = 25 °C 0.0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 12 10 ID = 250 µA 0.2 Power (W) VGS(th) (V) 8 On-Resistance vs. Gate-to-Source Voltage 0.3 0.1 6 TA = 25 °C 4 0.0 - 0.1 2 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 100 Single Pulse Power, Junction-to-Ambient Limited by RDS(on)* 10 I D - Drain Current (A) 10 µs, 100 µs 1 ms 1 10 ms 100 ms 1s 10 s TA = 25 °C Single Pulse DC, 100 s 0.1 0.01 0.1 1 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified 10 Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73338 S-80579-Rev. E, 17-Mar-08 Si1499DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 5 ID - Drain Current (A) 4 3 Package Limited 2 1 0 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Current Derating* 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = °C/W Single Pulse 0.01 10 -4 10-3 10 -2 10-1 1 Square Wave Pulse Duration (s) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73338. Document Number: 73338 S-80579-Rev. E, 17-Mar-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1