SI4348DY-E3

Si4348DY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Gen II Power MOSFET PRODUCT SUMMARY VDS (V) 30 APPLICATIONS ID (A) 11 10 rDS(on) (W) 0.0125 @ VGS = 10 V 0.014 @ VGS = 4.5 V D High-Side DC/DC Conversion − Notebook − Desktop − Server D Notebook Logic DC/DC, Low-Side D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4348DY—E3 (Lead Free) Si4348DY-T1—E3 (Lead Free with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "12 11 8.9 40 2.2 2.5 1.6 Steady State Unit V 8.0 6.5 A 1.20 1.31 0.84 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72790 S-40438—Rev. A, 15-Mar-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 43 74 19 Maximum 50 95 25 Unit _C/W 1 Si4348DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 11 A VGS = 4.5 V, ID = 10 A VDS = 15 V, ID = 11 A IS = 2.2 A, VGS = 0 V 30 0.0105 0.0115 40 0.75 1.1 0.0125 0.014 0.8 2.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.2 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W VDS = 15 V, VGS = 4.5 V, ID = 11 A 15 5 4.3 0.5 10 11 55 9 22 15 17 85 15 35 ns W 23 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 4 V 40 I D − Drain Current (A) 3V I D − Drain Current (A) 40 50 Transfer Characteristics 30 30 20 20 TC = 125_C 25_C 10 10 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com 0 0.0 −55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS − Gate-to-Source Voltage (V) Document Number: 72790 S-40438—Rev. A, 15-Mar-04 2 Si4348DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.020 r DS(on) − On-Resistance ( W ) 2600 Vishay Siliconix Capacitance 0.012 VGS = 4.5 V C − Capacitance (pF) 0.016 2080 Ciss 1560 0.008 VGS = 10 V 1040 0.004 520 Crss 0 5 10 Coss 0.000 0 10 20 30 40 50 0 15 20 25 30 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 4 8 12 16 20 Qg − Total Gate Charge (nC) VDS = 15 V ID = 11 A 1.4 rDS(on) − On-Resiistance (Normalized) 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 11 A 1.2 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 TJ = 150_C I S − Source Current (A) 10 0.05 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) 0.04 0.03 ID = 11 A 1 TJ = 25_C 0.02 0.01 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72790 S-40438—Rev. A, 15-Mar-04 www.vishay.com 3 Si4348DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 ID = 250 mA V GS(th) Variance (V) −0.0 −0.2 −0.4 −0.6 −0.8 −50 6 Power (W) 18 30 Single Pulse Power, Junction-to-Ambient 24 12 −25 0 25 50 75 100 125 150 0 10−2 10−1 1 Time (sec) 10 100 1000 TJ − Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D − Drain Current (A) 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 100 1s 10 s dc 0.01 0.1 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 71_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72790 S-40438—Rev. A, 15-Mar-04 Si4348DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72790 S-40438—Rev. A, 15-Mar-04 www.vishay.com 5