SI4392DY-T1

Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested ID (A) 12.5 10.0 PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.00975 @ VGS = 10 V 0.01375 @ VGS = 4.5 V APPLICATIONS D High-Side DC/DC Conversion − Notebook − Server SO-8 D S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G Ordering Information: Si4392DY Si4392DY-T1 (with Tape and Reel) Si4392DY—E3 (Lead (Pb)-Free) Si4392DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limits 30 "20 12.5 10 50 2.7 3.0 1.9 −55 to 150 Unit A W THERMAL RESISTANCE RATINGSa Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec Document Number: 72151 S-41427—Rev. D, 26-Jul-04 www.vishay.com RthJA RthJF Typical 33 16 Maximum 42 20 Unit _C/W 1 Si4392DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 12.5 A VGS = 4.5 V, ID = 10.0 A VDS = 15 V, ID = 12.5 A IS = 2.7 A, VGS = 0 V 30 0.008 0.011 40 0.73 1.1 0.00975 0.01375 1.0 3.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 12.5 A 10 3.5 2.6 1.6 15 5 45 8 30 2.7 25 10 70 15 60 ns W 15 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 4 V 40 I D − Drain Current (A) I D − Drain Current (A) 40 50 Transfer Characteristics 30 3V 30 20 20 TC = 125_C 10 25_C −55_C 10 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72151 S-41427—Rev. D, 26-Jul-04 2 Si4392DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.030 r DS(on) − On-Resistance ( W ) 1800 1500 C − Capacitance (pF) 1200 900 Coss 600 300 0 0 10 20 30 40 50 0 6 12 18 24 30 Crss Ciss Capacitance 0.024 0.018 VGS = 4.5 V VGS = 10 V 0.006 0.012 0.000 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 3 6 9 12 15 Qg − Total Gate Charge (nC) VDS = 15 V ID = 12.5 A rDS(on) − On-Resiistance (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 12.5 A −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.040 On-Resistance vs. Gate-to-Source Voltage 10 r DS(on) − On-Resistance ( W ) I S − Source Current (A) TJ = 150_C 0.032 0.024 ID = 12.5 A 1 0.016 TJ = 25_C 0.008 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72151 S-41427—Rev. D, 26-Jul-04 www.vishay.com 3 Si4392DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 V GS(th) Variance (V) 0.2 −0.0 −0.2 −0.4 −0.6 −0.8 −50 6 ID = 250 mA Power (W) 18 30 Single Pulse Power 24 12 0 −25 0 25 50 75 100 125 150 10−2 10−1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Limited by rDS(on) 10 I D − Drain Current (A) Safe Operating Area, Junction-to-Case 1 ms 1 10 ms 100 ms 0.1 1s TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72151 S-41427—Rev. D, 26-Jul-04 Si4392DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72151 S-41427—Rev. D, 26-Jul-04 www.vishay.com 5