SI4394DY-E3

Si4394DY New Product Vishay Siliconix N-Channel Reduced Qdg, Fast Switching WFETt FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.00825 @ VGS = 10 V 0.00975 @ VGS = 4.5 V ID (A) 15 14 D Extremely Low Qgd WFETt Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D High-Side DC/DC Conversion − Notebook − Server D Synchronous Rectification D SO-8 S S S G 1 2 3 4 Top View S N-Channel MOSFET 8 7 6 5 D D D D G Ordering Information: Si4394DY—E3 (Lead Free) Si4394DY-T1—E3 (Lead Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Avalanch Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range L= 0.1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS iAS PD TJ, Tstg 10 secs 30 "12 15 12 50 2.7 45 2.7 1.9 Steady State Unit V 10 8 A 1.3 1.4 0.9 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72713 S-40442—Rev. A, 15-Mar-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 32 68 16 Maximum 42 90 20 Unit _C/W 1 Si4394DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 14 A VDS = 15 V, ID = 15 A IS = 2.9 A, VGS = 0 V 30 0.0066 0.0077 65 0.73 1.1 0.00825 0.00975 0.6 1.8 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W f = 1 MHz 0.8 VDS = 15 V, VGS = 4.5 V, ID = 15 A VDS = 15 V, VGS = 0 V, f = 1 MHz 1900 530 120 12.5 3.9 2.1 1.2 13 8 48 13 36 1.8 20 13 75 20 55 ns W nC pF Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 50 I D − Drain Current (A) 40 30 20 10 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS = 10 thru 3 V 60 50 I D − Drain Current (A) 40 30 20 10 0 0.0 Transfer Characteristics TC = 125_C 25_C −55_C 0.5 1.0 1.5 2.0 2.5 3.0 2V VGS − Gate-to-Source Voltage (V) Document Number: 72713 S-40442—Rev. A, 15-Mar-04 2 Si4394DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.015 r DS(on) − On-Resistance ( W ) 2200 Ciss C − Capacitance (pF) 0.012 1760 Vishay Siliconix Capacitance 0.009 VGS = 4.5 V 1320 0.006 VGS = 10 V 880 Coss 440 Crss 0.003 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 3 6 9 12 15 18 Qg − Total Gate Charge (nC) VDS = 15 V ID = 15 A rDS(on) − On-Resiistance (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 15 A −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.040 On-Resistance vs. Gate-to-Source Voltage 10 r DS(on) − On-Resistance ( W ) I S − Source Current (A) TJ = 150_C 0.032 0.024 ID = 15 A 1 0.016 TJ = 25_C 0.008 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72713 S-40442—Rev. A, 15-Mar-04 www.vishay.com 3 Si4394DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 200 Single Pulse Power 0.2 V GS(th) Variance (V) 160 ID = 250 mA Power (W) 120 −0.0 −0.2 80 −0.4 40 −0.6 −50 −25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ − Temperature (_C) 100 Limited by rDS(on) 10 I D − Drain Current (A) Safe Operating Area, Junction-to-Case 1 ms 10 ms 1 100 ms 1s TC = 25_C Single Pulse 10 s dc 0.1 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 68_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72713 S-40442—Rev. A, 15-Mar-04 Si4394DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 0.01 Document Number: 72713 S-40442—Rev. A, 15-Mar-04 www.vishay.com 5