SI4418DY

Si4418DY New Product Vishay Siliconix N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 200 FEATURES ID (A) 3 2.8 rDS(on) (W) 0.130 @ VGS = 10 V 0.142 @ VGS = 6.0 V D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D Primary Side Switch SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4418DY—E3 Si4418DY-T1—E3 (with Tape and Reel) 8 7 6 5 D D D D G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanche Current Single Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C L = 0 1 mH 0.1 TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg 10 secs 200 "20 3 2.1 12 6 1.8 2.1 2.5 1.3 Steady State Unit V 2.3 1.6 A mJ 1.25 1.5 0.8 A W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72513 S-32412—Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 36 71 15 Maximum 50 85 20 Unit _C/W 1 Si4418DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 200 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 3 A VGS = 6.0 V, ID = 2.8 A VDS = 15 V, ID = 3 A IS = 2.1 A, VGS = 0 V 12 0.110 0.120 13 0.8 1.2 0.130 0.142 2 4 "100 1 20 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.1 A, di/dt = 100 A/ms VDD = 100 V, RL = 100 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W f = 1 MHz 1 VDS = 100 V, VGS = 10 V, ID = 3 A 20 4.5 6.5 2 15 15 40 20 70 3.4 25 25 60 30 110 ns W 30 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 12 10 I D − Drain Current (A) 8 6 4 2 4V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com 0 0 1 VGS = 10 thru 6 V 12 10 I D − Drain Current (A) 5V 8 6 Transfer Characteristics TC = 125_C 4 2 25_C −55_C 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Document Number: 72513 S-32412—Rev. B, 24-Nov-03 2 Si4418DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.20 r DS(on) − On-Resistance ( W ) 1600 1400 C − Capacitance (pF) 0.16 VGS = 6.0 V 0.12 VGS = 10 V 0.08 1200 1000 800 600 400 200 0.00 0 2 4 6 8 10 12 0 0 10 20 30 40 50 60 70 80 Crss Coss Ciss Vishay Siliconix Capacitance 0.04 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 100 V ID = 3 A 8 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3 A 2.0 6 r DS(on) − On-Resistance (W ) (Normalized) 8 12 16 20 1.5 4 1.0 2 0.5 0 0 4 Qg − Total Gate Charge (nC) 0.0 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.20 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) TJ = 150_C 10 r DS(on) − On-Resistance ( W ) 0.16 ID = 3 A 0.12 0.08 TJ = 25_C 0.04 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72513 S-32412—Rev. B, 24-Nov-03 www.vishay.com 3 Si4418DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.6 0.4 0.2 V GS(th) Variance (V) −0.0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −50 −25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 10 Power (W) 30 ID = 250 mA 40 50 Single Pulse Power 20 TJ − Temperature (_C) 100 Safe Operating Area IDM Limited rDS(on) Limited 10 I D − Drain Current (A) P(t) = 0.0001 P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 TA = 25_C Single Pulse BVDSS Limited P(t) = 1 P(t) = 10 dc 1 0.1 0.01 0.001 0.1 1 10 100 1000 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 71_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72513 S-32412—Rev. B, 24-Nov-03 Si4418DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72513 S-32412—Rev. B, 24-Nov-03 www.vishay.com 5