SI4427DY_05

Si4427DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0105 @ VGS = –10 V –30 0.0125 @ VGS = –4.5 V 0.0195 @ VGS = –2.5 V FEATURES ID (A) –13.3 –12.2 –9.8 D TrenchFETr Power MOSFETs S SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4427DY-T1 Si4427DY-T1–E3 (Lead (Pb)-free) 8 7 6 5 D D D D D G P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (TJ = 150_C)a 150 Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID –10.7 IDM IS –2.5 3.0 1.9 –55 to 150 –50 –1.3 1.5 0.9 W _C –7.5 A Symbol VDS VGS 10 secs Steady State –30 "12 Unit V –13.3 –9.4 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71308 S-51452—Rev. B, 01-Aug-05 www.vishay.com t v 10 sec Steady State Steady State RthJA RthJF Symbol Typical 32 68 15 Maximum 42 85 18 Unit _C/W 1 Si4427DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = –30 V, VGS = 0 V VDS = –30 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VGS = –10 V, ID = –13.3 A Drain-Source On-State Resistancea rDS(on) VGS = –4.5 V, ID = –12.2 A VGS = –2.5 V, ID = –9.8 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = –15 V, ID = –13.3 A IS = –2.5 A, VGS = 0 V –50 0.0086 0.0105 0.0165 40 –0.8 –1.2 0.0105 0.0125 0.0195 S V W –0.60 –1.7 "100 –1 –5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –2.5 A, di/dt = 100 A/ms VDD = –15 V, RL = 15 W 15 V, ID ^ –1 A, VGEN = –10 V, RG = 6 W VDS = –15 V, VGS = –4.5 V, ID = –13.3 A 47 20 8.3 16 12 220 70 50 25 20 330 110 80 ns 70 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 3 V 40 I D – Drain Current (A) I D – Drain Current (A) 40 50 Transfer Characteristics 30 30 20 20 TC = 125_C 25_C –55_C 1.5 2.0 2.5 3.0 10 2V 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71308 S-51452—Rev. B, 01-Aug-05 Si4427DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.030 r DS(on) – On-Resistance ( W ) 9000 Vishay Siliconix Capacitance 0.025 VGS = 2.5 V 0.020 C – Capacitance (pF) 7500 Ciss 6000 0.015 VGS = 4.5 V 0.010 VGS = 10 V 4500 3000 Coss 1500 Crss 0.005 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 13.3 A 8 rDS(on) – On-Resistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 13.3 A 6 1.2 4 1.0 2 0.8 0 0 20 40 60 80 100 120 Qg – Total Gate Charge (nC) 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.030 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) 0.025 ID = 13.3 A I S – Source Current (A) TJ = 150_C 10 0.020 0.015 TJ = 25_C 0.010 0.005 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71308 S-51452—Rev. B, 01-Aug-05 www.vishay.com 3 Si4427DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 50 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 40 30 0.0 29 –0.2 10 –0.4 –50 –25 0 25 50 75 100 125 150 0 10–2 10–1 1 Time (sec) 10 100 600 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 68_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71308 S-51452—Rev. B, 01-Aug-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1