SI4816DY-T1

Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 anne 30 Channel-2 Channel 2 rDS(on) (Ω) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V 0.013 @ VGS = 10 V 0.0185 @ VGS = 4.5 V ID (A) 6.3 5.4 10 8.6 FEATURES D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V @ 1.0 A IF (A) 2.0 D1 SO-8 G1 A/S2 A/S2 G2 1 2 3 4 Top View Ordering Information: Si4816DY Si4816DY-T1 (with Tape and Reel) Si4816DY—E3 (Lead (Pb)-Free) Si4816DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) N-Channel 2 MOSFET S2 A 8 7 6 5 D1 D2/S1 D2/S1 D2/S1 Schottky Diode G2 G1 N-Channel 1 MOSFET S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Currentb Single Pulse Avalanche Energyb Maximum Power Dissipation Maximum Power Dissipationa L = 0.1 mH 0 1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Channel-2 10 secs 30 20 Symbol VDS VGS 10 secs Steady State Steady State Unit V 6.3 ID IDM IS IAS EAS 1.4 PD TJ, Tstg 0.9 1.3 12 7.2 5.4 30 5.3 4.2 0.9 10 8.2 40 2.2 25 31.25 7.7 6.2 A 1.15 mJ 1.25 0.8 W _C 1.0 0.64 --55 to 150 2.4 1.5 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Channel-1 Parameter Maximum Junction-to-Ambient Maximum Junction to Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Starting date code W46BAA. Document Number: 71121 S-41697—Rev. E, 20-Sep-04 www.vishay.com t ≤ 10 sec Steady-State Steady-State Channel-2 Typ 43 82 25 Schottky Typ 48 80 28 Symbol RthJA RthJC Typ 72 100 51 Max 90 125 63 Max 53 100 30 Max 60 100 35 Unit _C/W C/ 1 Si4816DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold oltage Gate Threshold Voltage VGS( h) GS(th) IGSS GSS VDS = VGS, ID = 250 mA 250 DS GS VDS = 0 V, VGS = 20 V DS GS 20 VDS = 30 V, VGS = 0 V DS 30 GS Zero Gate oltage Drain Current Zero Gate Voltage Drain Current IDSS DSS VDS = 30 V, VGS = 0 V, TJ = 85_C 85 DS 30 GS On-State Drain Current On State Drain Currentb ID( ) D(on) VDS = 5 V, VGS = 10 V DS GS 10 VGS = 10 V, ID = 6.3 A Drain-Source On-State Resistance Drain Source On State Resistanceb rDS( ) DS(on) VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 5.4 A VGS = 4.5 V, ID = 8.6 A Forward Transconductance Forward Transconductanceb gf fs VSD SD VDS = 15 V, ID = 6.3 A VDS = 15 V, ID = 10 A IS = 1.3 A, VGS = 0 V IS = 1 A, VGS = 0 V Ch-1 Ch-2 Ch-1 Gate-Body Leakage Gate Body Leakage Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 30 0.018 0.0105 0.024 0.015 17 28 0.7 0.47 1.1 0.5 V S 0.022 0.013 0.030 0.0185 Ω A 0.8 1.0 2 3 100 100 1 100 15 2000 mA nA V Symbol Test Condition Min Typa Max Unit Diode Forward oltage Diode Forward Voltageb Dynamica Ch-1 Total Gate Charge Total Gate Charge Qg Channel-1 Channel-1 VDS = 15 V, VGS = 5 V, ID = 6.3 A Gate-Source Charge Gate Source Charge Qgs Channel 2 Channel-2 VDS = 15 V, VGS = 5 V, ID = --10 A Gate-Drain Charge Gate Drain Charge Qgd d Rg td( ) d(on) tr td( ff) d(off) tf trr IF = 1.3 A, di/dt = 100 A/ms IF = 2.2 A, di/dt = 100 mA/ms Channel-1 Channel 1 VDD = 15 V, RL = 15 Ω 15 15 ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω Channel 2 Channel-2 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω GEN Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Gate Resistance Gate Resistance Ch-2 Ch-1 Turn-On Delay Time Turn On Delay Time Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 1.5 0.5 10 15 5 5 26 44 8 12 30 32 8.0 15 1.75 5.3 3.2 4.6 3.1 2.6 20 30 10 10 50 80 16 24 60 70 ns ns Ω nC nC 12 23 Rise Time Rise Time Turn-Off Delay Time Turn Off Delay Time Fall Time Fall Time Source-Drain Reverse Recovery Time Source Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop orwar tage rop Symbol VF Test Condition IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 100_C Vr = --30 V, TJ = 125_C Vr = 10 V Min Typ 0.47 0.36 0.004 0.7 3.0 50 Max 0.50 0.42 0.100 10 20 Unit V Maximum Reverse Leakage Current a u e e se ea age Cu e t Junction Capacitance Irm rm CT mA pF www.vishay.com 2 Document Number: 71121 S-41697—Rev. E, 20-Sep-04 Si4816DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 4 V 24 I D -- Drain Current (A) I D -- Drain Current (A) 24 30 CHANNEL-1 Transfer Characteristics 18 3V 18 12 12 TC = 125_C 6 25_C 6 1V 0 0 2 4 6 8 10 2V --55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.030 1000 Capacitance DS(on) -- On-Resistance ( Ω ) C -- Capacitance (pF) 0.024 800 Ciss 600 0.018 VGS = 4.5 V 0.012 VGS = 10 V 400 Coss 200 Crss r 0.006 0.000 0 8 16 24 32 40 0 0 6 12 18 24 30 ID -- Drain Current (A) VDS -- Drain-to-Source Voltage (V) Gate Charge 10 V GS -- Gate-to-Source Voltage (V) VDS = 15 V ID = 6.3 A 8 rDS(on) -- On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 0 0 3 6 9 12 15 Qg -- Total Gate Charge (nC) Document Number: 71121 S-41697—Rev. E, 20-Sep-04 0.4 --50 1.8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 6.3 A 6 4 2 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) www.vishay.com 3 Si4816DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 40 0.05 CHANNEL-1 On-Resistance vs. Gate-to-Source Voltage DS(on) -- On-Resistance ( Ω ) 0.04 I S -- Source Current (A) TJ = 150_C 10 0.03 TJ = 25_C 0.02 ID = 10 A 0.01 r 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) Threshold Voltage 0.6 0.4 V GS(th) Variance (V) 0.2 --0.0 --0.2 --0.4 --0.6 20 --0.8 --1.0 --50 0 --25 0 25 50 75 100 TJ -- Temperature (_C) 125 150 ID = 250 mA Power (W) 80 100 Single Pulse Power, Junction-to-Ambient 60 40 0.001 0.01 0.1 Time (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W t1 t2 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 600 www.vishay.com 4 Document Number: 71121 S-41697—Rev. E, 20-Sep-04 Si4816DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 CHANNEL-1 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 4 V 32 I D -- Drain Current (A) I D -- Drain Current (A) 32 40 CHANNEL-2 Transfer Characteristics 24 24 TC = 125_C 16 16 8 3V 2V 8 25_C --55_C 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.030 2500 Capacitance r DS(on) -- On-Resistance ( Ω ) 0.024 VGS = 4.5 V 0.018 VGS = 10 V 0.012 C -- Capacitance (pF) 2000 Ciss 1500 1000 Coss 0.006 500 Crss 0.000 0 8 16 24 32 40 0 0 6 12 18 24 30 ID -- Drain Current (A) Document Number: 71121 S-41697—Rev. E, 20-Sep-04 VDS -- Drain-to-Source Voltage (V) www.vishay.com 5 Si4816DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 10 V GS -- Gate-to-Source Voltage (V) VDS = 15 V ID = 9.5 A rDS(on) -- On-Resiistance (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 6 12 18 24 30 0.4 --50 VGS = 10 V ID = 9.5 A CHANNEL-2 On-Resistance vs. Junction Temperature 8 6 4 2 --25 0 25 50 75 100 125 150 Qg -- Total Gate Charge (nC) TJ -- Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.05 On-Resistance vs. Gate-to-Source Voltage DS(on) -- On-Resistance ( Ω ) 0.04 I S -- Source Current (A) TJ = 150_C 10 0.03 TJ = 25_C 0.02 ID = 9.5 A 0.01 r 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) Threshold Voltage 0.6 0.4 V GS(th) Variance (V) 0.2 --0.0 --0.2 --0.4 --0.6 20 --0.8 --1.0 --50 0 --25 0 25 50 75 100 TJ -- Temperature (_C) 125 150 ID = 250 mA Power (W) 80 100 Single Pulse Power, Junction-to-Ambient 60 40 0.001 0.01 0.1 Time (sec) 1 10 www.vishay.com 6 Document Number: 71121 S-41697—Rev. E, 20-Sep-04 Si4816DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance CHANNEL-2 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 82_C/W 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71121 S-41697—Rev. E, 20-Sep-04 www.vishay.com 7 Si4816DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 10 TJ = 150_C 1 I F -- Forward Current (A) SCHOTTKY Forward Voltage Drop 20 10 I R -- Reverse Current (mA) 0.1 30 V 24 V TJ = 25_C 0.01 0.001 0.0001 0 25 50 75 100 125 150 TJ -- Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF -- Forward Voltage Drop (V) Capacitance 200 160 C -- Capacitance (pF) 120 80 Coss 40 0 0 6 12 18 24 30 VDS -- Drain-to-Source Voltage (V) www.vishay.com 8 Document Number: 71121 S-41697—Rev. E, 20-Sep-04