SI4830DY

Si4830DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V ID (A) 7.5 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V @ 1.0 A IF (A) 2.0 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4830DY Si4830DY-T1 (with Tape and Reel) S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 Schottky Diode ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 7.5 6.0 30 1.7 2.0 1.3 - 55 to 150 Steady State Unit V 5.7 4.6 0.9 1.1 0.7 W _C A Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS MOSFET Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71161 S-31989—Rev. C, 13-Oct-03 www.vishay.com t v 10 sec Steady-State Steady-State Schottky Typ 53 93 35 Symbol RthJA RthJC Typ 52 93 35 Max 62.5 110 40 Max 62.5 110 40 Unit _C/W 1 Si4830DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 85_C V On-State Drain Currentb Drain-Source On-State Drain Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb ID(on) rDS( ) DS(on) gfs VSD VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 7.5 A VGS = 4.5 V, ID = 6.5 A VDS = 15 V, ID = 7.5 A IS = 1 A, VGS = 0 V Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 Ch 1 Ch-1 Ch-2 20 0.018 0.024 22 0.8 0.47 1.2 0.5 0.022 0.030 0.8 "100 1 100 15 2000 A W S V mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Source Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.7 A di/dt = 100 A/ms 7 A, Ch 1 Ch-1 Ch-2 VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 8 10 21 10 40 32 VDS = 15 V, VGS = 10 V, ID = 7.5 A , , 13 2 2.7 3.2 16 20 40 20 80 70 ns W 20 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 100_C Vr = - 30 V, TJ = 125_C Vr = 10 V Min Typ 0.47 0.36 0.004 0.7 3.0 50 Max 0.50 0.42 0.100 10 20 Unit V Maximum Reverse Leakage Current g Junction Capacitance Irm CT mA pF www.vishay.com 2 Document Number: 71161 S-31989—Rev. C, 13-Oct-03 Si4830DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 3V 16 20 MOSFET Transfer Characteristics 12 12 8 8 TC = 125_C 4 25_C - 55_C 4 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.040 r DS(on) - On-Resistance ( W ) 1000 Capacitance C - Capacitance (pF) 0.032 VGS = 4.5 V VGS = 10 V 0.016 800 Ciss 600 0.024 400 Coss 200 Crss 0.008 0.000 0 4 8 12 16 20 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7.5 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.5 A 1.4 6 r DS(on) - On-Resistance (W ) (Normalized) 6 9 12 15 1.2 4 1.0 2 0.8 0 0 3 Qg - Total Gate Charge (nC) Document Number: 71161 S-31989—Rev. C, 13-Oct-03 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si4830DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 TJ = 150_C 0.04 MOSFET On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) ID = 7.5 A 0.03 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 10 Power (W) 30 50 Single Pulse Power 40 20 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 93_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71161 S-31989—Rev. C, 13-Oct-03 Si4830DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 MOSFET Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 20 10 I R - Reverse Current (mA) SCHOTTKY Forward Voltage Drop 10 TJ = 150_C Reverse Current vs. Junction Temperature 0.1 30 V 24 V I F - Forward Current (A) 1 TJ = 25_C 0.01 0.001 0.0001 0 25 50 75 100 125 150 TJ - Temperature (_C) 200 1 0.0 0.3 0.6 0.9 1.2 1.5 VF - Forward Voltage Drop (V) Capacitance 160 C - Capacitance (pF) 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Document Number: 71161 S-31989—Rev. C, 13-Oct-03 www.vishay.com 5