SI4942DY

Si4942DY Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 40 FEATURES D TrenchFETr Power MOSFET ID (A) 7.4 6.4 rDS(on) (W) 0.021 @ VGS = 10 V 0.028 @ VGS = 4.5 V APPLICATIONS D Low Power Synchronous Rectifier D Automotive 12-V Systems D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4942DY Si4942DY-T1 (with Tape and Reel) S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 40 "20 7.4 Steady State Unit V 5.3 4.3 30 25 A ID IDM IAS IS PD TJ, Tstg 5.8 1.8 2.1 1.3 - 55 to 150 0.9 1.1 0.7 W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71887 S-03950—Rev. B, 16-May-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 50 90 28 Maximum 60 110 34 Unit _C/W 1 Si4942DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 32 V, VGS = 0 V VDS = 32 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 7.4 A VGS = 4.5 V, ID = 6.4 A VDS = 15 V, ID = 7.4 A IS = 1.8 A, VGS = 0 V 30 0.017 0.023 25 0.75 1.1 0.021 0.028 S V 1.0 3 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 1.8 A, di/dt = 100 A/ms VDD = 20 V, RL = 20 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 20 V, VGS = 10 V, ID = 5.7 A 21 3.3 5.8 1.1 13 10 31 11 30 1.6 20 15 50 20 60 ns W 32 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 25 I D - Drain Current (A) 4V I D - Drain Current (A) 25 30 Transfer Characteristics 20 20 15 15 10 10 TC = 125_C 5 25_C - 55_C 0 5 3V 0 0 1 2 3 4 5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71887 S-03950—Rev. B, 16-May-03 www.vishay.com 2 Si4942DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.040 r DS(on) - On-Resistance ( W ) 1600 Capacitance 0.030 VGS = 4.5 V C - Capacitance (pF) 1280 Ciss 960 0.020 VGS = 10 V 640 0.010 320 Crss Coss 0.000 0 5 10 15 20 25 30 0 0 8 16 24 32 40 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 20 V ID = 5.7 A 8 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.4 A r DS(on) - On-Resistance (W ) (Normalized) 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 5 10 15 20 25 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C r DS(on) - On-Resistance ( W ) 10 0.08 0.06 ID = 7.4 A 0.04 1 TJ = 25_C 0.02 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71887 S-03950—Rev. B, 16-May-03 www.vishay.com 3 Si4942DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 40 0.2 V GS(th) Variance (V) - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 50 0 0.001 ID = 250 mA Power (W) 30 50 Single Pulse Power 20 10 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area 100 Limited by rDS(on) 10 I D - Drain Current (A) 1 mS 1 TA = 25_C Single Pulse 10 mS 100 mS 1S 10 S dc 0.1 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 71887 S-03950—Rev. B, 16-May-03 Si4942DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71887 S-03950—Rev. B, 16-May-03 www.vishay.com 5