SI4944DY

Si4944DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 12.2 9.4 rDS(on) (W) 0.0095 @ VGS = 10 V 0.016 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D DC/DC Conversion D Load Switching SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 G1 D1 D2 G2 S1 Ordering Information: Si4944DY Si4944DY-T1 (with Tape and Reel) N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 12.2 8.8 30 1.9 2.3 1.2 Steady State Unit V 9.3 6.7 A 1.1 1.3 0.7 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72512 S-32131—Rev. A, 27-Oct-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 42 75 19 Maximum 55 95 25 Unit _C/W 1 Si4944DY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 12.2 A VGS = 4.5 V, ID = 9.4 A VDS = 10 V, ID = 12.2 A IS = 1.9 A, VGS = 0 V 30 0.0075 0.013 32 0.8 1.2 0.0095 0.016 1 3 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W f = 1 MHz 0.5 VDS = 15 V, VGS = 4.5 V, ID = 12.2 A 13.5 7.1 4.7 1.0 10 10 40 12 45 1.7 15 15 60 20 70 ns W 21 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D − Drain Current (A) 4V I D − Drain Current (A) 24 30 Transfer Characteristics 18 18 12 12 TC = 125_C 6 25_C −55_C 3.0 3.5 4.0 4.5 6 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS − Gate-to-Source Voltage (V) Document Number: 72512 S-32131—Rev. A, 27-Oct-03 2 Si4944DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.030 r DS(on) − On-Resistance ( W ) 2400 Ciss C − Capacitance (pF) 0.024 1800 Vishay Siliconix Capacitance 0.018 VGS = 4.5 V 1200 0.012 VGS = 10 V 0.006 600 Crss 0 0 6 12 18 24 30 0 6 12 Coss 0.000 18 24 30 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 12.2 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 12.2 A 1.4 6 r DS(on) − On-Resistance (W ) (Normalized) 10 15 20 25 30 1.2 4 1.0 2 0.8 0 0 5 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.06 0.05 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) TJ = 150_C 10 r DS(on) − On-Resistance ( W ) ID = 12.2 A 0.04 ID = 3 A 0.03 0.02 0.01 0.00 TJ = 25_C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72512 S-32131—Rev. A, 27-Oct-03 www.vishay.com 3 Si4944DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) −0.0 −0.2 −0.4 −0.6 10 −0.8 −1.0 −50 0 0.01 ID = 250 mA Power (W) 30 50 Single Pulse Power 40 20 −25 0 25 50 75 100 125 150 0.1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 rDS(on) Limited Safe Operating Area IDM Limited 10 I D − Drain Current (A) ID(on) Limited 1 P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 0.1 TA = 25_C Single Pulse BVDSS Limited P(t) = 1 P(t) = 10 dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 75_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72512 S-32131—Rev. A, 27-Oct-03 Si4944DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72512 S-32131—Rev. A, 27-Oct-03 www.vishay.com 5