SI9934DY

Si9934DY Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) 0.05 @ VGS = –4.5 V 0.074 @ VGS = –2.5 V ID (A) "5 "4.1 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –12 "8 "5 "4.0 "20 –1.7 2.0 Unit V A W 1.3 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70163 S-49532—Rev. E, 02-Feb-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 62.5 Unit _C/W 1 Si9934DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static–0.6 Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –12 V, VGS = 0 V VDS = –12 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = –4.5 V VDS w 5 V, VGS = –2.5 V VGS = –4.5 V, ID = –5 A rDS(on) VGS = –2.5 V, ID = –3 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = –9 V, ID = –5 A IS = –1.7 A, VGS = 0 V 0.051 16 –0.75 –1.2 0.074 S V –20 A –6 0.039 0.05 W –0.6 "100 –1 –5 V nA mA Symbol Test Condition Min Typa Max Unit On-State Drain Currentb Drain Current ID(on) Drain-Source On-State Resistanceb On Resistance Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –1.7 A, di/dt = 100 A/ms VDD = –6 V, RL = 6 W V, ID ^ –1 A, VGEN = –4 5 V RG = 6 W A 4.5 V, VDS = –6 V, VGS = –4 5 V ID = –5 A V 4.5 V, 21 3 6 20 40 100 60 67 40 80 200 120 100 ns 40 nC C Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70163 S-49532—Rev. E, 02-Feb-98 Si9934DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5, 4.5, 4, 3.5, 3 V 16 15 I D – Drain Current (A) 12 I D – Drain Current (A) 2.5 V 20 Transfer Characteristics 10 8 2V 5 TC = 125_C 25_C –55_C 1.5 2.0 2.5 3.0 4 1V 0 0 1 2 3 4 5 1.5 V 0 0 0.5 1.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 3000 Capacitance r DS(on) – On-Resistance ( Ω ) 0.08 C – Capacitance (pF) 2500 0.06 VGS = 2.5 V VGS = 4.5 V 2000 Ciss 1500 Coss Crss 0.04 1000 0.02 500 0 0 5 10 ID – Drain Current (A) 15 20 0 0 2 4 6 8 10 12 VDS – Drain-to-Source Voltage (V) Gate Charge 5 VDS = 6 V ID = 5 A 1.8 On-Resistance vs. Junction Temperature V GS – Gate-to-Source Voltage (V) r DS(on) – On-Resistance ( Ω ) (Normalized) 4 1.6 VGS = 4.5 V ID = 5 A 1.4 3 1.2 2 1.0 1 0.8 0 0 5 10 15 20 25 0.6 –50 0 50 100 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70163 S-49532—Rev. E, 02-Feb-98 www.vishay.com S FaxBack 408-970-5600 3 Si9934DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.10 On-Resistance vs. Gate-to-Source Voltage 10 I S – Source Current (A) TJ = 150_C r DS(on) – On-Resistance ( Ω ) 0.08 0.06 ID = 5 A 0.04 0.02 TJ = 25_C 1 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.6 30 Single Pulse Power 0.4 ID = 250 µA V GS(th) Variance (V) 0.2 Power (W) 24 18 –0.0 12 –0.2 –0.4 6 –0.6 –50 0 0 50 TJ – Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70163 S-49532—Rev. E, 02-Feb-98 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1