SI9953DY

Si9953DY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.25 @ VGS = –10 V 0.40 @ VGS = –4.5 V ID (A) "2.3 "1.5 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 D1 D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –20 "20 "2.3 "1.8 "10 –1.7 2.0 Unit V A W 1.3 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70138 S-00652—Rev. K, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 62.5 Unit _C/W 1 Si9953DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VDS v –5 V, VGS = –4.5 V VGS = –10 V, ID = 1 A VGS = –4.5 V, ID = 0.5 A VDS = –15 V, ID = –2.3 A IS = –1.7 A, VGS = 0 V –10 A –1.5 0.12 0.22 2.5 –0.8 –1.2 0.25 0.40 W S V –1.0 "100 –2 –25 V nA mA Symbol Test Condition Min Typa Max Unit On-State Drain Currentb Drain Current ID(on) Drain-Source On-State Resistanceb On Resistance Forward Transconductanceb Diode Forward Voltageb rDS(on) gfs VSD Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = –10 V, RL = 10 W V, 10 ID ^ –1 A, VGEN = –10 V RG = 6 W A V, VDS = –10 V, VGS = –10 V ID = –2.3 A V V, 23 6.7 1.3 1.6 10 12 20 10 70 40 40 90 50 100 ns 25 nC C Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70138 S-00652—Rev. K, 27-Mar-00 Si9953DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 VGS = 10 – 7 V 12 I D – Drain Current (A) 6V I D – Drain Current (A) 8 25_C 6 125_C 10 TC = –55_C Transfer Characteristics 9 5V 6 4 3 4V 3V 2 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 7 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.0 VGS = 4.5 V r DS(on) – On-Resistance ( Ω ) 0.8 C – Capacitance (pF) 500 400 Coss 300 700 600 Capacitance 0.6 0.4 Ciss 200 100 Crss 0.2 VGS = 10 V 0 0 2 4 ID – Drain Current (A) 6 8 0 0 5 10 15 20 VDS – Drain-to-Source Voltage (V) 10 Gate Charge 2.0 On-Resistance vs. Junction Temperature V GS – Gate-to-Source Voltage (V) 6 r DS(on) – On-Resistance ( Ω ) (Normalized) 8 VDS =10 V ID = 2.3 A 1.6 VGS = 10 V ID = 1.0 A 1.2 4 0.8 2 0.4 0 0 2 4 6 8 0 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70138 S-00652—Rev. K, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 3 Si9953DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 1.0 On-Resistance vs. Gate-to-Source Voltage 10 I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) TJ = 150_C 0.8 ID = 2.3 A 0.6 TJ = 25_C 0.4 0.2 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.8 30 Single Pulse Power 0.6 ID = 250 µA 25 V GS(th) Variance (V) 0.4 20 0.2 15 0.0 10 –0.2 5 0 –25 0 25 50 75 100 125 150 0.010 0.100 1 10 30 –0.4 –50 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 10–2 10–1 1 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70138 S-00652—Rev. K, 27-Mar-00