SI9986DY

Si9986 Vishay Siliconix Buffered H-Bridge FEATURES D D D D D D 1.0-A H-Bridge 200-kHz Switching Rate Shoot-Through Limited TTL Compatible Inputs 3.8- to 13.2-V Operating Range Surface Mount Packaging APPLICATIONS D D D D D D D VCM Driver Brushed Motor Driver Stepper Motor Driver Power Converter Optical Disk Drives Power Supplies High Performance Servo DESCRIPTION The Si9986 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1.0 A @ VDD = 12 V (room temperature) at switching rates up to 200 kHz. Internal logic prevents the upper and lower outputs of either half-bridge from being turned on simultaneously. Unique input codes allow both outputs to be forced low (for braking) or forced to a high impedance level. The Si9986 is available in both standard and lead (Pb)-free, 8-pin SOIC packages, specified to operate over a voltage range of 3.8 V to 13.2 V, and the commercial temperature range of 0 to 70_C (C suffix) and the industrial temperature range of −40 to 85_C (D suffix). FUNCTIONAL BLOCK DIAGRAM, PIN CONFIGURATION AND TRUTH TABLE SO-8 SA GND VDD SB 1 2 3 4 Top View (6) INB 8 OUTA INA INB OUTB INA Shoot-Through Protection Logic (7) VDD (3) 7 6 5 Si9986 TRUTH TABLE INA 1 0 0 1 INB 0 1 0 1 OUTA 1 0 0 HiZ OUTB 0 1 0 HiZ (2) GND (1) SA (8) (5) OUTPUT A B (4) SB ORDERING INFORMATION Part Number Si9986CY-T1 Si9986DY-T1 Si9986CY-T1—E3 Si9986DY-T1—E3 Si9986CY Si9986DY Document Number: 70007 S-40131—Rev. E, 16-Feb-04 Temperature Range 0 to 70_C −40 to 85_C 0 to 70_C −40 to 85_C 0 to 70_C −40 to 85_C Package Tape and Reel Lead Free Tape and Reel Bulk (tubes) www.vishay.com 1 Si9986 Vishay Siliconix ABSOLUTE MAXIMUM RATINGSa Voltage on any pin with respect to ground . . . . . . . . . . . −0.3 V to VDD +0.3 V Voltage on pins 5, 8 with respect to GND . . . . . . . . . . . . . . −1 V to VDD +1 V Voltage on pins 1, 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to GND +1 V Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 A Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150_C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 150_C Maximum VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V Power Dissipationb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W qJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100_C/W Operating Temperature Range Si9986CY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 70_C Si9986DY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to 85_C Notes a. Device mounted with all leads soldered or welded to PC board. b. Derate 10 mW/_C above 25_C. RECOMMENDED OPERATING RANGE VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8 V to 13.2 V Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 125_C SPECIFICATIONS Test Conditions Unless Otherwise Specified Parameter Input Input Voltage High Input Voltage Low Input Current with Input Voltage High Input Current with Input Voltage Low VINH VINL IINH IINL VIN = 2 V VIN = 0 V −1 2 1 1 V Limits C Suffix, 0 to 70_C D Suffix, −40 to 85_C Symbol VDD = 3.8 to 13 2 V 8 13.2 SA @ GND, SB @ GND Mina Typb Maxa Unit mA Output Output Voltage High VOUTH IOUT = −500 mA 500 mA VDD = 10.8 V VDD = 4.5 V VDD = 10.8 V VDD = 4.5 V −10 10.5 4.1 3.4 10.7 4.3 3.7 0.2 0.2 0.1 0 0 VDD +0.7 −0.7 10 0.3 0.4 0.4 mA V IOUT = −300 mA, VDD = 3.8 V IOUT = 500 mA Output Voltage Low p g Output Leakage Current High Output Leakage Current Low Output V Clamp High Output V Clamp Low VOUTL IOLH IOLL VCLH VCLL IOUT = 300 mA, VDD = 3.8 V INA = INB w 2 V, VOUT = VDD = 13.2 V VOUT = 0, VDD = 13.2 V INA = INB w 2 V IOUT = 100 mA IOUT = −100 mA V Supply VDD Supply Current upply Current IDD IN = 100 kHz, VDD = 5 V INA = INB = 4.5 V, VDD = 5.5 V 2 300 mA mA Dynamic Propogation Delay Time TPLH TPHL VDD = 5 V 300 100 nS Notes a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. www.vishay.com Document Number: 70007 S-40131—Rev. E, 16-Feb-04 2 Si9986 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output High Voltage vs. Output Current 15 VDD = 13.2 V 700 600 12 500 VOUTH (V) 9 5.5 V 3.8 V 3 100 0 0.50 0 0.50 VOUTL (mV) 400 300 200 5.5 V VDD = 3.8 V Output Low Voltage vs. Output Current 13.2 V 6 0.75 1.00 Output Current (A) 1.25 1.50 0.75 1.00 Output Current (A) 1.25 1.50 140 Supply Current vs. Supply Voltage 6 Supply Current vs. Supply Voltage f = 100 kHz 120 I DD − Standby ( m A) 5 4 I DD (mA) 3 2 100 80 60 1 0 4 6 8 10 12 14 VDD − Supply Voltage (V) 40 4 6 8 10 12 14 VDD − Supply Voltage (V) Supply Current vs. Temperature 200 180 160 I DD (mA) 140 120 100 5.5 V 80 60 −35 0 −35 VDD = 13.2 V 6 8 Supply Current vs. Temperature f = 100 kHz VDD = 13.2 V I DD − Standby ( m A) 4 2 5.5 V −20 −5 10 25 40 55 70 85 −20 −5 10 25 40 55 70 85 Temperature (_C) Temperature (_C) Document Number: 70007 S-40131—Rev. E, 16-Feb-04 www.vishay.com 3 Si9986 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Supply Current vs. Frequency 15 600 500 VDD = 13.2 V 400 300 200 100 3.8 V 0 0 50 100 f − Frequency (kHz) 150 200 0 3 Propagation Time vs. Supply Voltage 12 Delay Time (ns) I DD (mA) 9 6 5.5 V TPLH 3 TPHL 6 9 VDD − Supply Voltage (V) 12 15 www.vishay.com 4 Document Number: 70007 S-40131—Rev. E, 16-Feb-04