SS12P4CHM3-87A

New Product SS12P4C Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifier eSMP TM Series K FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal impedance 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified J-STD-020, • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 6.0 A TJ max. 2 x 6.0 A 40 V 150 A 20 mJ 0.40 V 125 °C MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) (1) Maximum average forward rectified current (2) Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current at tp = 2 µs, 1 kHz, at TJ = 25 °C per diode Operating junction and storage temperature range total device per diode total device IF(AV) IF(AV) IFSM EAS IRRM TJ, TSTG VRRM SYMBOL SS12P4C S124C 40 12 6.0 3.5 150 20 1.0 - 55 to + 125 A A mJ A °C V A UNIT Notes (1) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink (2) Free air, mounted on recommended copper pad area Document Number: 89141 Revision: 13-May-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS12P4C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1 A IF = 3 A Instantaneous forward voltage per diode IF = 6 A IF = 1 A IF = 3 A IF = 6 A Reverse current per diode Typical junction capacitance per diode Rated VR 4.0 V, 1 MHz TA = 25 °C TA = 100 °C IR (2) CJ TA = 100 °C TA = 25 °C VF (1) SYMBOL TYP. 0.34 0.40 0.46 0.24 0.31 0.40 129 11.9 400 MAX. 0.52 0.45 500 25 µA mA pF V UNIT Notes (3) Pulse test: 300 µs pulse width, 1 % duty cycle (4) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RJA (1) SS12P4C 100 3 UNIT °C/W RJM (2) Notes (1) Free air, mounted on recommended copper pad area. Thermal resistance R JA - junction to ambient. (2) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink. Thermal resistance R JM - junction to mount. ORDERING INFORMATION (Example) PREFERRED P/N SS12P4C-M3/86A SS12P4C-M3/87A SS12P4CHM3/86A (1) UNIT WEIGHT (g) 0.10 0.10 0.10 0.10 PREFERRED PACKAGE CODE 86A 87A 86A 87A BASE QUANTITY 1500 6500 1500 6500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel SS12P4CHM3/87A (1) Note (1) Automotive grade RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 14 TM = 100 °C (1) 12 DC Forward Current (A) 10 8 6 TA = 25 °C (2) 4 2 0 0 25 50 75 100 125 150 Notes • Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink, TM measured at the terminal of cathode band (RJM = 3 °C/W) • Free air, mounted on recommended copper pad area (RJA = 100 °C/W) Ambient Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89141 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 13-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS12P4C Vishay General Semiconductor 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 0.1 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 D = 1.0 Junction Capacitance (pF) Average Power Loss (W) T 100 D = tp/T 2 3 4 5 tp 10 6 7 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode 100 10 000 Fig. 5 - Typical Junction Capacitance Per Diode Instantaneous Forward Current (A) 10 TA = 100 °C TA = 125 °C Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 1 TA = 25 °C 100 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 Fig. 6 - Typical Transient IThermal mpedance Per Diode Instantaneous Reverse Current (mA) TA = 125 °C TA = 100 °C 10 1 TA = 25 °C 0.1 0.01 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Document Number: 89141 Revision: 13-May-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS12P4C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) K 0.016 (0.40) 0.006 (0.15) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.047 (1.20) 0.039 (1.00) Mounting Pad Layout 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.268 (6.80) 0.186 (4.72) MIN. 0.049 (1.24) 0.037 (0.94) 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) Conform to JEDEC TO-277A 0.050 (1.27) MIN. 0.041 (1.04) 0.055 (1.40) MIN. www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89141 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 13-May-11 This document is subject to change without notice. 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