TP0101TS

TP0101T/TS Vishay Siliconix P-Channel 20-V (D-S) MOSFET, Low-Threshold PRODUCT SUMMARY ID (A) VDS (V) –20 rDS(on) (W) 0.65 @ VGS = –4.5 V 0.85 @ VGS = –2.5 V TP0101T –0.6 –0.5 TP0101TS –1.0 –0.9 FEATURES D D D D D High-Side Switching Low On-Resistance: 0.45 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 32 ns 2.5-V or Lower Operation BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems, DC/DC Converters D Power Supply Converter Circuits D Load/Power Switching–Cell Phones, Pagers TO-236 (SOT-23) Top View G 1 3 S 2 D Marking Code: TP0101T: POwll TP0101TS: PSwll w = Week Code l = Lot Traceability ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS TA= 25_C TA= 70_C PD TJ, Tstg TP0101T –20 "8 –0.6 –0.48 –3 –0.6 0.35 0.22 –55 to 150 TP0101TSc –20 "8 –1.0 –0.8 –3 –1.0 1.0 0.65 –55 to 150 Unit V A Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range W _C THERMAL RESISTANCE RATINGS Parameter Thermal Resistance, Junction-to-Ambientb Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 10 sec. c. Copper lead frame. Document Number: 70229 S-04279—Rev. D, 16-Jul-01 www.vishay.com Symbol RthJA TP0101T 357 TP0101TSc 125 Unit _C/W 11-1 TP0101T/TS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = –10 mA VDS = VGS, ID = –50 mA VDS = 0 V, VGS = "8 V VDS = –9.6 V, VGS = 0 V TJ = 55_C VDS v –5 V, VGS = –4.5 V ID(on) VDS v –5 V, VGS = –2.5 V VGS = –4.5 V, ID = –0.6 A rDS(on) gfs VSD VGS = –2.5 V, ID = –0.5 A VDS = –5 V, ID = –0.6 A IS = –0.6 A, VGS = 0 V –2.5 –0.5 0.45 0.69 1300 –0.9 –1.2 0.65 0.85 W mS V A –20 –0.5 –26 –0.9 –1.5 "100 –1 –10 mA V nA Symbol Test Conditions Min Typ Max Unit On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltagea Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = –6 V, VGS = 0, f = 1 MHz VDS = –6 V, VGS =–4.5 V ID ^ –0.6 A 2020 180 720 110 80 30 pF 3000 pC Switching td(on) Turn-On Time tr td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. VDD = –6 V, RL = 12 W ID ^ –0.6 A, VGEN = –4.5 V RG = 6 W 7 25 19 9 12 35 ns 30 15 VPLJ01 Turn-Off Time www.vishay.com 11-2 Document Number: 70229 S-04279—Rev. D, 16-Jul-01 TP0101T/TS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) –6 Output Characteristics –2.0 Transfer Characteristics TA = –55_C –5 ID – Drain Current (A) VGS = –5 V –4.5 V ID – Drain Current (A) –4 V –1.5 25_C 125_C –1.0 –4 –3.5 V –3 V –3 –2 –2.5 V –2 V –1.5 V –0.5, 1 V –0.5 –1 0 0 –1 –2 –3 –4 0.0 0.0 – 0.5 –1.0 –1.5 – 2.0 – 2.5 – 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current –4 rDS(on) – Drain-Source On-Resistance ( Ω ) 350 300 –3 C – Capacitance (pF) 250 200 150 Capacitance VGS = 0 f = 1 MHz –2 VGS = –2.5 V –1 Ciss 100 Coss 50 Crss VGS = –4.5 V 0 0 –1 –2 –3 –4 –5 0 0 –3 –6 –9 – 12 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) –7 –6 VGS – Gate-to-Source Voltage (V) –5 –4 –3 –2 –1 0 0 600 VDS = –6 V ID = –0.5 A Gate Charge 1.7 On-Resistance vs. Junction Temperature 1.5 rDS(on) – On-Resistance ( Ω ) (Normalized) VGS = –4.5 V ID = –0.5 A 1.3 1.1 0.9 1200 1800 2400 3000 0.7 –50 0 50 100 150 Qg – Total Gate Charge (pC) TJ – Junction Temperature (_C) Document Number: 70229 S-04279—Rev. D, 16-Jul-01 www.vishay.com 11-3 TP0101T/TS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage –10 3.0 On-Resistance vs. Gate-to-Source Voltage 2.5 IS – Source Current (A) TJ = 50_C –1 rDS(on) – On-Resistance ( Ω ) 2.0 1.5 – 0.1 TJ = 25_C 1.0 ID = –0.5 A 0.5 –0.01 0.0 – 0.5 –1.0 – 1.5 – 2.0 – 2.5 0.0 0 –1 –2 –3 –4 –5 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.34 10 Single Pulse Power 0.24 VGS(th) – Variance (V) ID = –50 mA 0.14 8 6 0.04 4 TA = 25_C Single Pulse –0.06 2 –0.16 –50 0 0 50 100 150 0.001 0.01 0.1 Time (sec) 1 10 100 TJ – Junction Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 30 www.vishay.com 11-4 Document Number: 70229 S-04279—Rev. D, 16-Jul-01