MMBT5551

MMBT5550 MMBT5551 High Voltage NPN Transistors 1 BASE COLLECTOR 3 3 1 2 2 EMITTER SOT-23 V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 ( TA=25 C unless otherwise noted) (3) 1.0 , MMBT5550 MMBT5551 MMBT5550 MMBT5551 140 160 160 180 6.0 -100 , 10 , WEITRON http://www.weitron.com.tw MMBT5550 MMBT5551 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector Cutoff Current ( VCB 100 Vdc, I E= 0 ) ( VCB 120 Vdc, I E= 0 ) I CBO MMBT5550 MMBT5551 MMBT5550 MMBT5551 I EBO 100 50 100 50 nAdc uAdc ( VCB 100 Vdc, I E= 0 ,TA= 100 C ) ( VCB 100 Vdc, IE= 0 , TA= 100 C ) Emitter Cutoff Current ( VEB 4.0 Vdc, I C=0 ) 50 nAdc ON CHARACTERISTICS DC Current Gain (IC=1.0 mAdc, VCE=5.0 Vdc) (IC=10 mAdc, VCE=5.0 Vdc) (IC=50 mAdc, VCE=5.0 Vdc) Collector-Emitter Saturation Voltage (IC=10 mAdc, IB=1.0mAdc) (IC=50 mAdc, IB=5.0mAdc) Base-Emitter Saturation Voltage (IC=10 mAdc, IB=1.0mAdc) (IC=50 mAdc, IB=5.0mAdc) Both Types MMBT5550 MMBT5551 Both Types MMBT5550 MMBT5551 VBE(sat) - hFE MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 VCE(sat) - 60 80 60 80 20 30 250 250 Vdc 0.15 0.25 0.20 Vdc 1.0 1.2 1.0 1. FR-5=1.0 x 0.75 x 0.062 in 2. Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0% WEITRON http://www.weitron.com.tw MMBT5550 MMBT5551 500 h FE , DC CURRENT GAIN 300 200 100 50 30 20 10 7.0 5.0 0.1 -55 C TJ = 125 C 25 C VCE = 1.0 V VCE = 5.0 V 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 10 I C , COLLECTOR CURRENT (mA) 20 30 50 70 100 FIG.1 DC Current Gain VCE , COLLECTOR-EMITTER VOL TAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 I B , BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 m A 10 m A 30 m A 100 m A FIG. 2 Collector Saturation Region 1 I C , COLLECT OR CURRENT (mA) 10 1.0 VCE = 30 V V VOLTAGE (VOLTS) , 0.8 0.6 0.4 0.2 TJ = 25 C 100 10-1 10 10 10 10 -2 TJ = 125 C 75 C REVERSE 25 C I C = I CES VBE(sat ) @ I C / I B = 10 -3 -4 -5 FORWARD VCE(s at )@ IC / I B = 10 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE , BASE-EMITTER VOLTAGE (VOLTS) 0.6 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IC , COLLECTOR CURRENT (mA) 100 FIG. 3 Collector Cut-Off Region FIG. 4 "On" Voltages WEITRON http://www.weitron.com.tw MMBT5550 MMBT5551 2.5 V , TEMPERA TURE COEFFICIENT (mV/ C) 2.0 1.5 1.0 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.1 TJ = - 55 C to +135 C 10.2 V Vin 10 ms INPUT PULSE 0.25mF VBB -8.8V 100 RB 5.1 k 100 1N914 VCC 30 V 3.0 k RC Vout q VC for VCE(sat) q VB for VBE(sat) tr ,t f 10 n s Vin DUTY CYCLE = 1.0% 100 0.20.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IC , COLLECTOR CURRENT (mA) Values Shown are for IC@ 10 mA FIG. 6 Switching Time Test Circuit FIG.5 Temperature Coefficients 100 70 50 30 t , TIM E (n s) 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 0.5 0.7 1.0 5.0 7.0 10 VR, REVERSE VOLTAGE (VOLTS) 2.0 3.0 20 Cibo Cobo 1000 TJ= 25 C 500 300 200 100 50 30 20 10 0.20.3 0.5 t d@ VEB(off) = 1.0 V VCC = 120 V t r@ VCC = 30 V I C / I B = 10 TJ = 25 C tr @ VCC= 120 V C, CAPACIT ANCE (p F) 20 30 50 1.0 2.03.0 5.0 10 I C , COLLECTOR CURRENT (mA) 100 200 FIG. 7 Capacitances FIG. 8 Turn-On Time 5000 3000 2000 t , TIME (n s) 1000 500 300 200 100 50 0.2 0.3 0.5 t f @ VCC= 120 V t f @ VCC = 30 V IC / I B = 10 TJ = 25 C t s@ VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 50 I C , COLLECTOR CURRENT (mA) 100 200 FIG.9 Turn-Off T ime WEITRON http://www.weitron.com.tw MMBT5550 MMBT5551 SOT-23 Package Outline Dimensions Unit:mm A TOP VIEW B C E G H D K L Dim Min Max A 0.35 0.51 B 1.19 1.80 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.60 L 0.30 0.61 M 0.076 0.25 M J WEITRON http://www.weitron.com.tw