SFP12N65

SFP12N65 SFP12N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.78Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 30nC) ■ Fast Switching Capability ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for AC-DC switching power supplies, DC-DC power converters, high voltage H-bridge motor drive PMW Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note 2) (Note 1) (Note 3) (Note1) ±30 990 22 4.5 178 1.43 -55~150 300 Parameter Value 650 12 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min - Value Typ - Max 0.70 62.5 Units ℃ / ℃ W / ℃ W / W Rev, A Nov.2008 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SFP12N65 SFP12N65 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 650 V, VGS = 0 V VDS = 480 V, Tc = 125°C Min ±30 650 3 - Type 0.64 6.4 1830 155 2.0 50 49 310 54 51.7 9.6 18.6 Max Unit ±100 10 100 4.5 0.78 ns nC pF nA V μA μA V V Ω S Drain cut−off current IDSS Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff Qg Qgs Qgd ID = 250 μA, VGS = 0 V VDS = 10 V, ID =250 μA VGS = 10 V, ID = 6A VDS = 50 V, ID =6A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD =325V, ID = 12A RG=25Ω (Note4,5) VDD =520 V, VGS = 10 V, ID = 12A (Note4,5) - Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 10A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR / dt = 100 A / μs Min - Type 450 5.0 Max Unit 12 48 1.4 A A V ns μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=14mH,IAS=12A,VDD=95V,RG=25Ω,Starting TJ=25℃ 3.ISD≤10A,di/dt≤200A/us, VDD