PROVISIONAL
Wisdom Semiconductor
WFW10N80
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 1.05 Ω )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
●
2. Drain
◀
1. Gate
▲
● ●
3. Source
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies.
TO-247
G DS
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
800 10 6.3 40
Units
V A A A V mJ mJ V/ns W W/°C °C °C
±30
960 26 4.0 260 2.08 - 55 ~ 150 300
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Value Min.
-
Typ.
0.24 -
Max.
0.48 40
Units
°C/W °C/W °C/W
1/2
Copyright@Wisdom Semiconductor Inc., All rights reserved.
WFW10N80
Electrical Characteristics
Symbol Off Characteristics
BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 800V, VGS = 0V VDS = 640V, TC = 125 °C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V 800 1.0 10 100 100 -100 V V/°C uA uA nA nA ( TC = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
IGSS
On Characteristics
VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance VDS = VGS, ID = 250uA VGS =10 V, ID = 5A 3.0 0.85 5.0 1.05 V Ω
Dynamic Characteristics
Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 2100 220 25 pF
Dynamic Characteristics
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =640V, VGS =10V, ID =10A
(Note 4, 5)
VDD =400V, ID =10A, RG =25Ω
(Note 4, 5)
50 120 130 80 55 15 25
nC ns
-
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr ※ NOTES
1. Repeativity rating : pulse width limited by junction temperature 2. L = 18.0mH, IAS =10A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 10A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature.
Parameter
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction Diode in the MOSFET IS =10A, VGS =0V IS=10A, VGS=0V, dIF/dt=100A/us
Min.
-
Typ.
800 10
Max.
10 40 1.4 -
Unit.
A V ns uC
2/2
Copyright@Wisdom Semiconductor Inc., All rights reserved.
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