AP504-PCB

DCS-band 4W HBT Amplifier Module AP504 Product Features • 1705 – 1790 MHz • 31.5 dB Gain • +25 dBm CDMA2k 7fa Power (-63 dBc ACPR) Product Description The AP504 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage amplifier module has 31.5 dB gain. The module has been internally optimized for linearity to provide +25 dBm (-63 dBc ACPR) linear power for 7-carrier CDMA2000 applications. The AP504 uses a high reliability InGaP/GaAs HBT process technology and does not require any external matching components. The module operates off of a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to maintain high linearity over temperature. It has the added feature of a +5V power down control pin. While the module has been tuned for optimal performance for Class AB applications, the quiescent current can also be adjusted for Class B applications through an external resistor. A low-cost metal housing allows the device to have a low thermal resistance and achieves over 100 years MTTF. All devices are 100% RF and DC tested. The AP504 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G base stations using the DCS1800 frequency band. Functional Diagram • +12 V Single Supply • Power Down Mode • Bias Current Adjustable • RoHS-compliant flange-mount pkg 1 2 3 4 5 6 Top View Pin No. 1 2/4 3/5 6 Case Function RF Output Vcc Vpd RF Input Ground Applications • Final stage amplifiers for Repeaters • Optimized for driver amplifier PA mobile infrastructure Specifications (1) 25 ºC, Vcc=12V, Vpd=5V, Icq=835mA, R7=0 , 50 unmatched fixture Parameter Operational Bandwidth Test Frequency Adjacent Channel Power Ratio Power Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Operating Current (2) Quiescent Current, Icq (2) Device Voltage, Vcc Device Voltage, Vpd Load Stability Units MHz MHz dBc dB dB dB dBm dBm mA mA V V VSWR Min Typ Max Test Conditions 1705 – 1790 1765 -63.2 30.5 31.5 11 5 +36 +52 790 850 780 835 +12 +5 10:1 -61 35.5 CDMA2000 7fa 25 dBm Total Power, 885 kHz offset Pout = +25 dBm 940 920 Pout = +23 dBm/tone, ∆f = 1 MHz Pout = +25 dBm Pull-down voltage: 0V = “OFF”, 5V=”ON” 1. Test conditions unless otherwise noted: 25ºC. 2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3). Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (continuous) with output terminated in 50 Rating -40 to +85 °C -55 to +150 °C +15 dBm Ordering Information Part No. AP504 AP504-PCB Description DCS-band 4W HBT Amplifier Module Fully-Assembled Evaluation Board (Class AB configuration, Icq=835mA) Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 1 of 5 April 2007 DCS-band 4W HBT Amplifier Module AP504 Performance Graphs – Class AB Configuration (AP504-PCB) The AP504-PCB and AP504 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for the amplifier is set at 0 in this configuration. Increasing that value will decrease the quiescent and operating current of the amplifier module, as described on the next page. +12V GND +12V 10µF DNP +5V 0 DNP 0 DNP 100pF .01µF DNP RF IN 0 DNP DNP 6 .01µF DNP 100pF Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. Details of the mounting holes used in the WJ heatsink are given on the last page of this datasheet. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing should be followed: 1. Connect RF In and Out 2. Connect the voltages and ground pins as shown in the circuit. 3. Apply the RF signal 4. Power down with the reverse sequence RF OUT 0 5 4 3 2 1 DNP DNP Gain +25 °C, 12Vcc, Icq=850mA Return Loss +25 °C, Vcc=12V, Icq=850mA Gain vs. Temp 1765 MHz, Vcc=12V, Icq=850mA 33 M a g n itu d e (d B ) 0 -5 36 34 G a in (d B ) 32 30 28 32 G a in (d B ) 31 30 29 28 1700 -10 -15 -20 S11 1720 1740 1760 1780 1800 -25 1700 1720 1740 1760 1780 S22 26 1800 -40 -20 0 20 40 60 80 Frequency (MHz) ACPR vs. Output Power vs. Temp CDMA2000 SR1, 7FA , fc=1765 MHz, ∆f=±885 kHz, Vcc=12V, Icq=850mA Frequency (MHz) Temperature (°C) ACPR vs. Frequency vs. Temp CDMA2000 SR1, 7FA , ∆f=±885 kHz, 25 dBm Pout, Vcc=12V, Icq=850mA ACPR vs. Output Power vs. Temp -50 -55 -60 -65 -70 -50 -55 -60 -65 -70 CDMA2000 SR1, 7FA , fc=1765 MHz, ∆ f=±1.98 MHz, Vcc=12V, Icq=850mA -50 -55 -60 -65 -70 1750 -40 °C +25 °C +85 °C A C P R (d B c ) A C P R (d B c ) 18 20 22 24 26 28 18 20 22 24 26 28 A C P R (d B c ) -40 °C +25 °C +85 °C -40 °C +25 °C +85 °C 1760 1770 1780 Total Output Power (dBm) Total Output Power (dBm) Frequency (MHz) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 2 of 5 April 2007 DCS-band 4W HBT Amplifier Module AP504 Performance Graphs (cont’d) ACPR vs. Output Power Icc vs. Output Power 1765 MHz, Vcc=12V, Icq=850mA Icc / PAE vs. Output Power 1765 MHz, +25 °C, Vcc=12V, Icq=850mA -60 CDMA2000 SR1, 1FA , fc=1765 MHz, +25 °C, Vcc=12V, Icq=850mA 1.98 MHz offset 885 kHz offset 860 Ic c (m A ) / P A E 1 0.8 PAE 0.6 0.4 0.2 0 Icc 840 Ic c (m A ) 820 800 780 -40 °C +25 °C +85 °C A C P R (d B c ) -70 -80 -90 18 20 22 24 26 Total Output Power (dBm) Output Power / Gain vs. Input Power 1765 MHz, +25 °C, Vcc=12V, Icq=850mA 760 18 20 22 24 26 28 Output Channel Power (dBm) IMD vs. Output Power per tone 1765 MHz, +25 °C, Vcc=12V, Icq=850mA 20 22 24 26 28 30 32 34 Output Power (dBm) OIP3 vs. Output Power per tone 1765 MHz, +25 °C, Vcc=12V, Icq=850mA 38 G a in (d B ) / P o u t (d B m ) 36 34 32 30 28 -4 -2 0 2 4 6 Input Power (dBm) Pout Gain -30 IMD3_Upper 55 IMD3_Lower IMD5 -40 IM D (d B ) -50 -60 -70 -80 18 50 O IP 3 (d B m ) 22 24 26 28 45 40 35 30 20 18 20 22 24 26 28 Output Power per tone (dBm) Output Power per tone (dBm) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 3 of 5 April 2007 DCS-band 4W HBT Amplifier Module AP504 MTTF Calculation The MTTF of the AP504 can be calculated by first determining how much power is being dissipated by the amplifier module. Because the device’s intended application is to be a power amplifier pre-driver or final stage output amplifier, the output RF power of the amplifier will help lower the overall power dissipation. In addition, the amplifier can be biased with different quiescent currents, so the calculation of the MTTF is custom to each application. The power dissipation of the device can be calculated with the following equation: Pdiss = Vcc * Icc – (Output RF Power – Input RF Power), Vcc = Operating supply voltage = 12V Icc = Operating current {The RF power is converted to Watts} While the maximum recommended case temperature on the datasheet is listed at 85 ˚C, it is suggested that customers maintain an MTTF above 1 million hours. This would convert to a derating curve for maximum case temperature vs. power dissipation as shown in the plot below. Maximum Recommended Case Temperature vs. Power Dissipation to maintain 1 million hours MTTF 90 Maximum Case Temperature (° C) To calculate the MTTF for the module, the junction temperature needs to be determined. This can be easily calculated with the module’s power dissipation, the thermal resistance value, and the case temperature of operation: Tj = Pdiss * Rth + Tcase Tj = Junction temperature Pdiss = Power dissipation (calculated from above) Rth = Thermal resistance = 9 ˚C/W Tcase = Case temperature of module’s heat sink From a numerical standpoint, the MTTF can be calculated using the Arrhenius equation: MTTF = A* e(Ea/k/Tj) A = Pre-exponential Factor = 6.087 x 10-11 hours Ea = Activation Energy = 1.39 eV k = Boltzmann’s Constant = 8.617 x 10-5 eV/ ºK Tj = Junction Temperature (ºK) = Tj (ºC) + 273 A graphical view of the MTTF can be shown in the plot below. MTTF vs. Junction Temperature 1.E+07 MTTF (hours) 80 1.E+06 70 60 50 4 5 6 7 8 9 10 11 12 Power Dissipation (Watts) 1.E+05 130 140 150 160 170 180 Junction Temperature (° C) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 4 of 5 April 2007 DCS-band 4W HBT Amplifier Module AP504 Outline Drawing AP504 1 2 3 4 5 6 Outline Drawing for the Heatsink with the WJ Evaluation Board Product Marking The device will be marked with an “AP504” designator with an alphanumeric lot code on the top surface of the package noted as “ABCD” on the drawing. A manufacturing date will also be printed as “XXYY”, where the “XX” represents the week number from 1 – 52. The product will be shipped in tubes in multiples of 15. ESD / MSL Information ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1C Passes at ≥ 1,000 to < 2,000 volts Human Body Model (HBM) JEDEC Standard JESD22-A114 Class III Passes ≥ 500 to < 1,000 volts Charged Device Model (CDM) JEDEC Standard JESD22-C101 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 5 of 5 April 2007