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FMMT413

FMMT413

  • 厂商:

    ZETEX

  • 封装:

  • 描述:

    FMMT413 - NPN SILICON PLANAR AVALANCHE TRANSISTOR - Zetex Semiconductors

  • 数据手册
  • 价格&库存
FMMT413 数据手册
FMMT413 ELECTRICAL CHARACTERISTICS PARAMETER Emitter Inductance Transition Frequency Collector-Base Capacitance . SYMBOL Le fT Ccb MIN. TYP. 2.5 150 2 MAX. UNIT nH MHz pF CONDITIONS. Standard SOT23 leads IC=10mA, VCE=5V f=20MHz VCB=10V, IE=0 f=1MHz SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 – MARCH 1996 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL - 413 FMMT413 C B E SOT23 TYPICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj:Tstg TYP. MAX. VALUE 150 50 6 100 50 330 -55 to +150 UNIT V V V 0.1 0.1 0.15 0.8 22 31 50 µA µA UNIT V V V mA A mW °C 50 - Avalanche Current (A) C CE=2x4.7nF CE=4.7nF CE=2.2nF CE=1.0nF Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (25ns Pulse Width) Power Dissipation Operating and Storage Temperature Range 40 amb=25°C IB=5mA/ns T p.r.f.=10KHz C 30 C 20 C 10 0 0 50 100 150 200 250 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current in Second Breakdown (Pulsed) Static Forward Current Transfer Ratio SYMBOL V(BR)CES VCEO(sus) V(BR)EBO MIN. 150 50 6 CONDITIONS. IC=100µA IC=10mA IE=100µA VCB=120V VEB=4V IC=10mA, IB=1mA IC=10mA, IB=1mA VC=110V, CCE=4.7nF* VC=130V, CCE=4.7nF* IC=10mA, VCE=10V I( V5 - Supply Voltage (V) Collector Cut-Off Current ICBO IEBO VCE(sat) VBE(sat) IUSB hFE V V A A *Measured within a circuit possessing an approximate loop inductance of 12nH. The I(USB) monitor circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop The FMMT413 device is a development product. Samples availability and release to production scheduled for June 1996 3 - 103 3 - 102 FMMT413 ELECTRICAL CHARACTERISTICS PARAMETER Emitter Inductance Transition Frequency Collector-Base Capacitance . SYMBOL Le fT Ccb MIN. TYP. 2.5 150 2 MAX. UNIT nH MHz pF CONDITIONS. Standard SOT23 leads IC=10mA, VCE=5V f=20MHz VCB=10V, IE=0 f=1MHz SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 – MARCH 1996 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL - 413 FMMT413 C B E SOT23 TYPICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj:Tstg TYP. MAX. VALUE 150 50 6 100 50 330 -55 to +150 UNIT V V V 0.1 0.1 0.15 0.8 22 31 50 µA µA UNIT V V V mA A mW °C 50 - Avalanche Current (A) C CE=2x4.7nF CE=4.7nF CE=2.2nF CE=1.0nF Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (25ns Pulse Width) Power Dissipation Operating and Storage Temperature Range 40 amb=25°C IB=5mA/ns T p.r.f.=10KHz C 30 C 20 C 10 0 0 50 100 150 200 250 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current in Second Breakdown (Pulsed) Static Forward Current Transfer Ratio SYMBOL V(BR)CES VCEO(sus) V(BR)EBO MIN. 150 50 6 CONDITIONS. IC=100µA IC=10mA IE=100µA VCB=120V VEB=4V IC=10mA, IB=1mA IC=10mA, IB=1mA VC=110V, CCE=4.7nF* VC=130V, CCE=4.7nF* IC=10mA, VCE=10V I( V5 - Supply Voltage (V) Collector Cut-Off Current ICBO IEBO VCE(sat) VBE(sat) IUSB hFE V V A A *Measured within a circuit possessing an approximate loop inductance of 12nH. The I(USB) monitor circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop The FMMT413 device is a development product. Samples availability and release to production scheduled for June 1996 3 - 103 3 - 102
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