Zowie Technology Corporation
High Voltage Transistors Lead free product
FEATURE
We declare that the material of product compliance with RoHS requirements. 3
3
COLLECTOR
MMBT5550G MMBT5551G
1
1 2
BASE
SOT-23
2
EMITTER
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V
EBO
Value 140 160 6.0 600
Unit Vdc Vdc Vdc mAdc
IC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
RθJA PD
RθJA TJ , Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current ( V CB = 100Vdc, I E = 0) ( V CB = 120Vdc, I E = 0) ( V CB = 100Vdc, I E = 0, T A=100 °C) ( V CB = 120Vdc, I E = 0, T A=100 °C) Emitter Cutoff Current ( V BE = 4.0Vdc, I C= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
REV. 0
V (BR)CEO MMBT5550G MMBT5551G V (BR)CBO MMBT5550G MMBT5551G V MMBT5550G MMBT5551G MMBT5550G MMBT5551G I EBO
(BR)EBO
140 160 160 180 6.0 — — — — —
— — — — — 100 50 100 50 50
Vdc
Vdc
Vdc nAdc µAdc
I CBO
nAdc
Zowie Technology Corporation
Zowie Technology Corporation
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol hFE MMBT5550G MMBT5551G MMBT5550G MMBT5551G MMBT5550G MMBT5551G VCE(sat) Both Types MMBT5550G MMBT5551G V Both Types MMBT5550G MMBT5551G
BE(sat)
Min
Max
Unit ––
ON CHARACTERISTICS
DC Current Gain (I C = 1.0 mAdc, V CE = 5.0 Vdc) (I C = 10 mAdc, V CE = 5.0 Vdc) (I C = 50 mAdc, V CE = 5.0Vdc) Collector–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50 mAdc, I B = 5.0 mAdc ) Base–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50 mAdc, I B = 5.0 mAdc) 60 80 60 80 20 30 — — 250 250 — — Vdc — — — — — — 0.15 0.25 0.20 Vdc 1.0 1.2 1.0
REV. 0
Zowie Technology Corporation
Zowie Technology Corporation
MMBT5550G MMBT5551G
h FE, DC CURRENT GAIN (NORMALIZED)
500 300 200
T J = +125°C +25°C
V CE = 1.0 V V CE = 5.0 V
100
–55°C
50 30 20
10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I C , COLLECTOR CURRENT (mA) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
1.0
T J = 25°C
0.8
I C = 1.0 mA
0.6
10 mA
30 mA
100 mA
0.4
0.2
0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
I B , BASE CURRENT (mA)
Figure 16. Collector Saturation Region
10 1
1.0
V CE = 30 V
10 0
T J = 25°C
0.8
I C, COLLECTOR CURRENT (µA)
10
–1
T J = 125°C I C= I 75°C REVERSE 25°C FORWARD
CES
V, VOLTAGE (VOLTS)
V BE(sat) @ I C /I B = 10
0.6
10 –2
0.4
10 –3
10 –4
0.2
V CE(sat) @ I C /I B = 10
10
–5
0 –0.2 –0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
–0.4 –0.3
V BE , BASE–EMITTER VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 3. Collector Cut–Off Region
Figure 4. “On” Voltages
REV. 0
Zowie Technology Corporation
Zowie Technology Corporation
MMBT5550G MMBT5551G
, TEMPERATURE COEFFICIENT (mV/°C)
2.5 2 1.5 1.0 0.5 0 –0.5 –1.0 –1.5 –2.0 –2.5 0.1 t r , t f
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