WSF20P03

WSF20P03 P-Ch MOSFET General Description Product Summery The WSF20P03 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID -30V 26mΩ -27A Applications The WSF20P03 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology TO-252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM 10s Steady State -30 V ±25 V 1 -27 A 1 -20 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V 1 -9 -8.5 A 1 -8 -7.4 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Units 2 3 -60 A EAS Single Pulse Avalanche Energy 93 mJ IAS Avalanche Current -25 A 25 W PD@TC=25℃ 4 Total Power Dissipation 3.5 4 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 2.0 W ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA RθJC www.winsok.tw Parameter Typ. Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 1 Thermal Resistance Junction-Case Page 1 Max. Unit --- 62 ℃/W --- 25 ℃/W --- 2.8 ℃/W Dec.2014 WSF20P03 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS(th) Temperature Coefficient Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ VGS=-10V , ID=-5A --- 26 32 VGS=-4.5V , ID=-4A --- 36 45 -1.0 -1.5 -2.5 V --- 4.6 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-5A --- 17 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 26 Ω Qg Total Gate Charge (-4.5V) --- 12.6 17.6 Qgs Gate-Source Charge --- 4.8 6.7 Qgd Gate-Drain Charge --- 4.5 5.7 Td(on) VDS=-15V , VGS=-4.5V , ID=-5A --- 4.6 9.2 Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 14.8 26.6 Turn-Off Delay Time ID=-5A --- 41 82 Fall Time --- 19.6 39.2 Ciss Input Capacitance --- 1345 --- Coss Output Capacitance --- 194 --- Crss Reverse Transfer Capacitance --- 158 --- Min. Typ. Max. Unit --- --- -5.8 A --- --- -24 A --- --- -1.2 V --- 16.3 --- nS --- 5.9 --- nC Tr Td(off) Tf Turn-On Delay Time nC VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-5A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t