WST2315

WST2315 P-Ch MOSFET General Description Product Summery The WST2315 is the highest performance trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -20V 50mΩ -4.4A Applications The WST2315 meet the RoHS and Green Product requirement,with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z ESD:3K z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available SOT-23-3L Pin Configuration Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=70℃ IDM Rating Units Drain-Source Voltage -20 V Gate-Source Voltage ±12 V 1 -4.4 A 1 -2.8 A -14 A Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W Dec.2014 WST2315 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-4.5V , ID=-3A --- 50 63 --- 60 74 -0.5 -0.8 -1.0 V --- 3.95 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=-2.5V , ID=-2A VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 16 --- S Qg Total Gate Charge (-4.5V) --- 10.2 14.3 Qgs Gate-Source Charge --- 1.89 2.6 Qgd Gate-Drain Charge --- 3.1 4.3 VDS=-15V , VGS=-4.5V , ID=-3A uA nC --- 5.6 11.2 Rise Time VDD=-10V , VGS=-4.5V , --- 40.8 73 Turn-Off Delay Time RG=3.3Ω, ID=-3A --- 33.6 67 Fall Time --- 18 36 Ciss Input Capacitance --- 416 --- Coss Output Capacitance --- 114 --- Crss Reverse Transfer Capacitance --- 55 --- Min. Typ. Unit --- --- Max. -4.3 --- --- -14 A --- --- -1 V --- 21.8 --- nS --- 6.9 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-3A , dI/dt=100A/µs , TJ=25℃ A Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t