WST3416

WST3416 N-Ch MOSFET Product Summery General Description The WST3416 uses advanced trench technology to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.1V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. BVDSS 20V RDSON ID 6.5A 18mΩ Applications z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23-3L Pin Configuration z Super Low Gate Charge D z Excellent Cdv/dt effect decline z Green Device Available G S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ID@Tc=25℃ ID@Tc=70℃ IDM ±8 V 1 6.5 A 1 5.2 A Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 30 A W PD@TA=25℃ Total Power Dissipation 1.4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W Dec.2014 WST3416 N-Ch MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) 2 Static Drain-Source On-Resistance Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.018 --- V/℃ VGS=4.5V , ID=6.5A --- 18 24 --- 22 28 0.4 0.7 1.1 V --- -3.1 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS=2.5V , ID=5.5A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=6.5A --- 50 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 3 Ω Qg Total Gate Charge (4.5V) --- 10 15.0 Qgs Gate-Source Charge --- 4.2 8.9 Qgd Gate-Drain Charge --- 2.6 5.2 --- 280 --- Td(on) VDS=15V , VGS=4.5V , ID=6.5A Turn-On Delay Time uA nC ns Rise Time VDS=10V , VGS=4.5V , RG=3Ω --- 328 --- Turn-Off Delay Time RL=1.54Ω --- 3.76 --- Fall Time --- 2.24 --- Ciss Input Capacitance --- 1295 --- Coss Output Capacitance --- 160 --- Crss Reverse Transfer Capacitance --- 87 --- Min. Typ. Max. Unit --- --- 2.0 A --- --- 10 A Tr Td(off) Tf VDS=10V , VGS=0V , f=1MHz us pF Diode Characteristics Symbol IS ISM Parameter Conditions 1,4 Continuous Source Current 2,4 Pulsed Source Current 2 VG=VD=0V , Force Current VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1.1 V trr Reverse Recovery Time --- 31 41 nS Qrr Reverse Recovery Charge IF=6.5A,dI/dt=100A/µs , TJ=25℃ --- 6.8 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t