S9013

S9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. SOT-23 Plastic Package MARKING: J3 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 5 V Collector Current IC 500 mA Power Dissipation Ptot 300 mW Tj 150 Thermal Temperature From Junction To Ambient RΘJA 416 Storage Temperature Range Tstg - 55 to + 150 Junction Temperature C O ℃/W C O Characteristics at Ta = 25 OC Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage = IC=0.1mA, IE 0 V(BR)CBO 40 V Collector-emitter breakdown voltage = IC=1mA, IB 0 V(BR)CEO 25 V Emitter-base breakdown voltage V(BR)EBO = IE=0.1mA, IC 0 5 V Collector cut-off current = VCB=40V, IE 0 ICBO 0.1 uA Collector cut-off current = VCE=20V, IB 0 ICEO 0.1 uA 0.1 uA Emitter cut-off current = VEB=5V, IC 0 IEBO hFE(1) DC current gain hFE(2) IC 50mA VCE=1V, = 120 VCE = =1V, IC 500mA 40 400 Collector-emitter saturation voltage VCE(sat) IC=500mA, = IB 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, = IB 50mA 1.2 V VCB=1V,IC= 10mA, 0.7 V Base-emitter voltage VBE Transition frequency fT Cob Collector output capacitance VCE=6V,IC=20mA, f=30MHz VCB=6V, IE=0, f=1MHz 150 MHz 8 CLASSIFICATION OF hFE(1) RANK L H J RANGE 120-200 200-350 300-400 pF S9013 Typical Characteristics Static Characteristic 100 COLLECTOR CURRENT 60 DC CURRENT GAIN 300uA 250uA 200uA 40 150uA —— IC COMMON EMITTER VCE=1V Ta=100℃ hFE 350uA IC (mA) 400uA 80 hFE 1000 COMMON EMITTER Ta=25℃ Ta=25℃ 100 100uA 20 IB=50uA 0 0 8 4 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— Ta=100℃ Ta=25℃ 30 3 30 10 (mA) IC —— IC Ta=25℃ 0.8 Ta=100℃ 0.4 0.0 500 100 1 3 30 10 (mA) 100 COLLECTOR CURRENT —— VBE IC Cob/ Cib 100 —— IC 500 (mA) VCB/ VEB f=1MHz IE=0/ IC=0 30 Ta=25℃ Cib 30 CAPACITANCE C (pF) Ta=100℃ 10 3 Ta=25℃ 1 Cob 10 3 0.3 0.1 0.0 0.2 0.4 0.6 0.8 1 0.1 1.0 fT 1000 —— 1 0.3 IC PC —— 400 VCE=6V 10 3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) V 20 (V) Ta Ta=25℃ COLLECTOR POWER DISSIPATION PC (mW) (MHz) fT 500 100 IC β=10 β=10 1 COMMON EMITTER VCE=1V (mA) VBEsat 1.2 100 100 TRANSITION FREQUENCY 30 10 COLLECTOR CURRENT IC COLLECTOR CURRENT IC 3 300 10 COLLECTOR CURRENT 1 (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 500 VCE 10 20 300 100 10 10 100 30 COLLECTOR CURRENT IC (mA) 300 200 100 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 (℃ ) 150