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HTC8632XV8/R6

HTC8632XV8/R6

  • 厂商:

    HUATECH(华泰)

  • 封装:

    MSOP8_3X3MM

  • 描述:

    420μA,6.5MHZ,RRIO CMOS运算放大器

  • 数据手册
  • 价格&库存
HTC8632XV8/R6 数据手册
HTC8631, HTC8632, HTC8634 420μA, 6.5MHz, RRIO CMOS Operational Amplifiers General Description The HTC8631 (single), HTC8632 (dual) and HTC8634 (quad) are low noise, low voltage, and micro power operational amplifiers. With an excellent bandwidth of 6.5MHz, a slew rate of 5.2V/μs, and a quiescent current of 420μA per amplifier at 5V, the HTC863x family can be designed into a wide range of applications. The HTC863x op-amps are designed to provide optimal performance in low voltage and low noise systems. The input common-mode voltage range includes ground, and the maximum input offset voltage are 4.2mV. These parts provide rail-to-rail output swing into heavy loads. The HTC863x family is specified for single or dual power supplies of +2.3V to +5.5V. All models are specified over the extended industrial temperature range of −40℃ to +125℃. The HTC8631 is available in 5-lead SC70 and SOT-23 packages. The HTC8632 is available in 8-lead MSOP and SOIC packages. The HTC8634 is available in 14-lead TSSOP and SOIC packages. Features and Benefits High Slew Rate: 5.2 V/μs Wide Bandwidth: 6.5 MHz Low Power: 420 μA per Amplifier Supply Current Settling Time to 0.1% with 2V Step: 0.7 μs Overload Recovery Time: 0.3 μs Low Noise : 13 nV/√Hz High Gains of 114 dB for Active Filters and Gain Stages Low Offset Voltage: 4.2 mV Maximum Unit Gain Stable Rail-to-Rail Input and Output – Input Voltage Range: -0.3 to +5.2 V at 5V Supply  Operating Power Supply: +2.3 V to +5.5 V  Operating Temperature Range: −40℃ to +125℃           Applications        Photodiode Amplification Sensor Interfaces Audio Outputs Active Filters Driving A/D Converters Portable Equipment Battery-Powered Instrumentation Pin Configurations (Top View) HTC8634 HTC8632 HTC8631 TSSOP-14/SO-14 MSOP-8/SO-8 SC70-5/SOT23-5 OUT 1 ﹣VS 2 ﹢IN 3 5 4 ﹢VS ﹣IN OUT A 1 ﹣IN A 2 ﹢IN A 3 ﹣VS 4 A B OUT A 1 14 OUT D 8 ﹢VS ﹣IN A 2 13 ﹣IN D 7 OUT B ﹢IN A 3 12 ﹢IN D 6 ﹣IN B ﹢VS 4 11 ﹣VS 5 ﹢IN B ﹢IN B 5 10 ﹢IN C ﹣IN B 6 9 ﹣IN C OUT B 7 8 OUT C A B 1 D C CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Huatech (and design) is a registered trademark of Huatech Semiconductor Inc. Copyright Huatech Semiconductor Inc. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. FN1615-31 (v.2.a) HTC8631, HTC8632, HTC8634 420μA, 6.5MHz, RRIO CMOS Operational Amplifiers Pin Description Symbol Description –IN Inverting Input of the Amplifier. The Voltage range can go from (VS– – 0.2V) to (VS+ + 0.2V). +IN Non-Inverting Input of Amplifier. This pin has the same voltage range as –IN. +VS Positive Power Supply. The voltage is from 2.3V to 5.5V. Split supplies are possible as long as the voltage between VS+ and VS– is between 2.7V and 5.5V. A bypass capacitor of 0.1μF as close to the part as possible should be used between power supply pins or between supply pins and ground. –VS Negative Power Supply. It is normally tied to ground. It can also be tied to a voltage other than ground as long as the voltage between VS+ and VS– is from 2.3V to 5.5V. If it is not connected to ground, bypass it with a capacitor of 0.1μF as close to the part as possible. OUT Amplifier Output. N/C No Connection. Ordering Information Type Number Package Name Package Quantity Marking Code HTC8631XC5/R6 SC70-5 Tape and Reel, 3 000 C31 HTC8631XT5/R6 SOT23-5 Tape and Reel, 3 000 C31 HTC8632XS8/R8 SO-8 Tape and Reel, 4 000 C32X HTC8632XV8/R6 MSOP-8 Tape and Reel, 3 000 C32X HTC8634XT14/R6 TSSOP-14 Tape and Reel, 3 000 C34X HTC8634XS14/R5 SO-14 Tape and Reel, 2 500 C34X Limiting Value In accordance with the Absolute Maximum Rating System (IEC 60134). Parameter Absolute Maximum Rating Supply Voltage, VS+ to VS– 7.0V Common-Mode Input Voltage VS– – 0.5V to VS+ + 0.5V Storage Temperature Range –65℃ to +150℃(TJ) Junction Temperature 160℃ Lead Temperature Range (Soldering 10 sec) 260℃ Electrostatic Discharge Voltage HBM ±4 000V MM ±400V NOTE 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 2: Provided device does not exceed maximum junction temperature (TJ) at any time. 2 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Huatech (and design) is a registered trademark of Huatech Semiconductor Inc. Copyright Huatech Semiconductor Inc. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. FN1615-31 (v.2.a) HTC8631, HTC8632, HTC8634 420μA, 6.5MHz, RRIO CMOS Operational Amplifiers Electrical Characteristics VS = 5.0V, TA = +25℃, VCM = VS /2, VO = VS /2, and RL = 10kΩ connected to VS /2, unless otherwise noted. Boldface limits apply over the specified temperature range, TA = −40 to +125 ℃. Symbol Parameter Conditions Min. Typ. Max. Input offset voltage -4.2 ±0.8 +4.2 over Temperature -4.5 Unit INPUT CHARACTERISTICS VOS VOS TC IB Offset voltage drift Input offset current VCM Common-mode voltage range Common-mode rejection ratio 800 1 VS––0.2 VCM = 0.05V to 3.5V over Temperature over Temperature Open-loop voltage gain AVOL 1 over Temperature over Temperature over Temperature RIN Input resistance CIN Input capacitance 80 VCM = VS––0.1 to VS++0.1 V RL = 10kΩ, VO = 0.05 to 3.5 V RL = 600Ω, VO = 0.15 to 3.5 V pA pA VS++0.2 V 94 70 68 mV μV/℃ 2 Input bias current IOS CMRR over Temperature +4.5 dB 80 66 98 114 90 88 102 dB 72 100 GΩ Differential 2.0 Common mode 3.5 pF OUTPUT CHARACTERISTICS VOH High output voltage swing VOL Low output voltage swing ZOUT ISC RL = 600Ω VS+–75 RL = 10kΩ VS+–5 RL = 600Ω 75 RL = 10kΩ 5 Closed-loop output impedance f = 200kHz, G = +1 0.4 Open-loop output impedance f = 1MHz, IO = 0 2.6 Short-circuit current mV mV Ω Source current through 10Ω 55 Sink current through 10Ω 40 mA DYNAMIC PERFORMANCE GBW Gain bandwidth product f = 1kHz 6.5 MHz ΦM Phase margin CL = 100pF 66 ° SR Slew rate G = +1, CL = 100pF, VO = 1.5V to 3.5V 5.2 V/μs BWP Full power bandwidth VS THD+N Total harmonic distortion + f = 1kHz, G = +1, VO = 3VPP noise Min. Typ. Max. Unit 0.3 μs 0.0013 % NOISE PERFORMANCE Vn Input voltage noise f = 0.1 to 10 Hz 8 μVP-P en Input voltage noise density f = 10kHz 13 nV/√Hz In Input current noise density f = 10kHz 3 fA/√Hz POWER SUPPLY VS Operating supply voltage PSRR Power supply rejection ratio IQ 2.3 VS = 2.7V to 5.5V, VCM < VS+ − 2V 82 over Temperature 75 Quiescent current (per amplifier) 360 5.5 98 420 over Temperature V dB 490 μA 550 THERMAL CHARACTERISTICS TA θJA Operating temperature range Package Thermal Resistance -40 +125 SC70-5 333 SOT23-5 190 MSOP-8 216 SO-8 125 TSSOP-14 112 SO-14 115 ℃ ℃/W Specifications subject to changes without notice. 4 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Huatech (and design) is a registered trademark of Huatech Semiconductor Inc. Copyright Huatech Semiconductor Inc. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. FN1615-31 (v.2.a) HTC8631, HTC8632, HTC8634 420μA, 6.5MHz, RRIO CMOS Operational Amplifiers Typical Performance Characteristics At TA = +25℃, VCM = VS /2, and RL = 10kΩ connected to VS /2, unless otherwise noted. 10000 2,000 Samples VS = 5V VCM = 0.05V 300 Iuput Bias Current(pA) Number of Amplifiers 350 250 200 150 100 50 1000 100 10 0 -4.5 -3.5 -2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 4.5 1 -50 -25 Input Offset Voltage Production Distribution. 6 Output Voltage(V) 4 3.5 3 +25℃ +125℃ 2 –40℃ 1.5 1 0.5 Output Voltage(VPP) Sourcing Current 2.5 Sinking Current 0 0 15 30 45 50 o 75 100 125 60 5.5V 5 5.0V 4 3 2.7V 2 1 0 10k 75 100k 1M 10M Frequency(Hz) Output Current (mA) Maximum Output Voltage as a function of Frequency. Output Voltage Swing as a function of Output Current. 450 Quiescent current (μA) 800 Quiescent Current (μA) 25 Input Bias Current as a function of Temperature. 5 4.5 0 Temperature( C) Input Offset Voltage (mV) 600 400 200 0 1.5 2.5 3.5 4.5 5.5 6.5 VDD = 5V 440 435 430 425 420 415 410 -50 0 50 100 150 Temperature (℃) Supply Voltage (V) Quiescent Current as a function of Supply Voltage. 5 445 Quiescent Current as a function of Temperature. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Huatech (and design) is a registered trademark of Huatech Semiconductor Inc. Copyright Huatech Semiconductor Inc. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. FN1615-31 (v.2.a) HTC8631, HTC8632, HTC8634 420μA, 6.5MHz, RRIO CMOS Operational Amplifiers Typical Performance Characteristics (continued) At TA = +25℃, VCM = VS /2, and RL = 10kΩ connected to VS /2, unless otherwise noted. 70 140 120 +ISC 60 Channel Separation(dB) 55 50 45 -ISC 40 35 30 25 20 -50 -25 0 25 50 75 100 125 100 80 60 40 20 0 10 150 100 1k Short-circuit Current as a function of Temperature. 1M 10M 120 180 100 150 80 120 60 90 40 60 20 20 30 0 0 0 100 CMRR 80 AVOL (dB) PSRR and CMRR (dB) 100k Channel Separation as a function of Frequency. 120 60 PSRR 40 -20 -20 1 10 100 1k 10k 100k 1M 1 10M 10 100 Frequency (Hz) 1k 10k 100k 1M -30 10M Frequency (Hz) Power Supply and Common-mode Rejection Ratio as a function of Frequency. Open-loop Gain and Phase as a function of Frequency. 120 130 110 VCM = –0.2 to 3.5 V 120 AOL, PSRR (dB) CMRR (dB) 10k Frequency (Hz) Temperature (℃) Phase (deg) Short-circuit Current (mA) 65 100 VCM = –0.2 to 5.7 V 90 80 RL = 10kΩ 110 100 PSRR 90 70 60 80 -50 -25 0 25 50 75 100 125 150 Temperature (℃) -25 0 25 50 75 100 125 150 Temperature (℃) Common-mode Rejection Ratio as a function of Temperature. 6 -50 Open-loop Gain and Power Supply Rejection Ratio as a function of Temperature. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Huatech (and design) is a registered trademark of Huatech Semiconductor Inc. Copyright Huatech Semiconductor Inc. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. FN1615-31 (v.2.a) HTC8631, HTC8632, HTC8634 420μA, 6.5MHz, RRIO CMOS Operational Amplifiers Typical Performance Characteristics (continued) At TA = +25℃, VCM = VS /2, and RL = 10kΩ connected to VS /2, unless otherwise noted. CL=100pF 1V/div 50mV/div CL=100pF Time (400nS/div) Time (200nS/div) Large Signal Step Response. Small Signal Step Response. 200 180 Voltage Noise (nV/√Hz) 160 140 120 100 80 60 40 20 0 10 100 1k 10k 100k Frequency (Hz) Input Voltage Noise Spectral Density as a function of Frequency. 7 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Huatech (and design) is a registered trademark of Huatech Semiconductor Inc. Copyright Huatech Semiconductor Inc. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. FN1615-31 (v.2.a) HTC8631, HTC8632, HTC8634 420μA, 6.5MHz, RRIO CMOS Operational Amplifiers Application Notes 6.0 The HTC863x family is a CMOS op-amp family and features very low input bias current in pA range. The low input bias current allows the amplifiers to be used in applications with high resistance sources. Care must be taken to minimize PCB Surface Leakage. See below section on “PCB Surface Leakage” for more details. 5.0 PCB SURFACE LEAKAGE In applications where low input bias current is critical, Printed Circuit Board (PCB) surface leakage effects need to be considered. Surface leakage is caused by humidity, dust or other contamination on the board. Under low humidity conditions, a typical resistance between nearby traces is 1012Ω. A 5V difference would cause 5pA of current to flow, which is greater than the HTC863x’s input bias current at +25℃ (±1fA, typical). It is recommended to use multi-layer PCB layout and route the op-amp’s –IN and +IN signal under the PCB surface. The effective way to reduce surface leakage is to use a guard ring around sensitive pins (or traces). The guard ring is biased at the same voltage as the sensitive pin. An example of this type of layout is shown in Figure 1 for Inverting Gain application. 1. For Non-Inverting Gain and Unity-Gain Buffer: a) Connect the non-inverting pin (+IN) to the input with a wire that does not touch the PCB surface. b) Connect the guard ring to the inverting input pin (– IN). This biases the guard ring to the Common Mode input voltage. 2. For Inverting Gain and Trans-impedance Gain Amplifiers (convert current to voltage, such as photo detectors): a) Connect the guard ring to the non-inverting input pin (+IN). This biases the guard ring to the same reference voltage as the op-amp (e.g., VS/2 or ground). b) Connect the inverting pin (–IN) to the input with a wire that does not touch the PCB surface. Figure 1. Use a guard ring around sensitive pins GROUND SENSING AND RAIL TO RAIL The input common-mode voltage range of the HTC863x series extends 300mV beyond the supply rails. This is achieved with a complementary input stage—an N-channel input differential pair in parallel with a P-channel differential pair. For normal operation, inputs should be limited to this range. The absolute maximum input voltage is 500mV beyond the supplies. Inputs greater than the input commonmode range but less than the maximum input voltage, while not valid, will not cause any damage to the op-amp. Unlike some other op-amps, if input current is limited, the inputs may go beyond the supplies without phase inversion, as shown in Figure 2. Since the input common-mode range extends from (VS− − 0.2V) to (VS+ + 0.2V), the HTC863x opamps can easily perform ‘true ground’ sensing. 8 AMPLITUDE (V) LOW INPUT BIAS CURRENT 4.0 3.0 2.0 1.0 0.0 -1.0 0 10 20 30 40 50 60 TIME (ms) Figure 2. No Phase Inversion with Inputs Greater Than the Power-Supply Voltage A topology of class AB output stage with common-source transistors is used to achieve rail-to-rail output. For light resistive loads (e.g. 100kΩ), the output voltage can typically swing to within 5mV from the supply rails. With moderate resistive loads (e.g. 10kΩ), the output can typically swing to within 10mV from the supply rails and maintain high openloop gain. See the Typical Characteristic curve, Output Voltage Swing as a function of Output Current, for more information. The maximum output current is a function of total supply voltage. As the supply voltage to the amplifier increases, the output current capability also increases. Attention must be paid to keep the junction temperature of the IC below 150℃ when the output is in continuous short-circuit. The output of the amplifier has reverse-biased ESD diodes connected to each supply. The output should not be forced more than 0.5V beyond either supply, otherwise current will flow through these diodes. CAPACITIVE LOAD AND STABILITY The HTC863x can directly drive 1nF in unity-gain without oscillation. The unity-gain follower (buffer) is the most sensitive configuration to capacitive loading. Direct capacitive loading reduces the phase margin of amplifiers and this results in ringing or even oscillation. Applications that require greater capacitive drive capability should use an isolation resistor between the output and the capacitive load like the circuit in Figure 3. The isolation resistor RISO and the load capacitor CL form a zero to increase stability. The bigger the RISO resistor value, the more stable VOUT will be. Note that this method results in a loss of gain accuracy because RISO forms a voltage divider with the RL. RISO HTC863x VOUT VIN CL Figure 3. Indirectly Driving Heavy Capacitive Load An improvement circuit is shown in Figure 4. It provides DC accuracy as well as AC stability. The RF provides the DC accuracy by connecting the inverting signal with the output. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Huatech (and design) is a registered trademark of Huatech Semiconductor Inc. Copyright Huatech Semiconductor Inc. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. FN1615-31 (v.2.a) HTC8631, HTC8632, HTC8634 420μA, 6.5MHz, RRIO CMOS Operational Amplifiers Application Notes (continued) The CF and RISO serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back to the amplifier’s inverting input, thereby preserving phase margin in the overall feedback loop. Figure 4. Indirectly Driving Heavy Capacitive Load with DC Accuracy For no-buffer configuration, there are two others ways to increase the phase margin: (a) by increasing the amplifier’s gain, or (b) by placing a capacitor in parallel with the feedback resistor to counteract the parasitic capacitance associated with inverting node. POWER SUPPLY LAYOUT AND BYPASS The HTC863x family operates from either a single +2.3V to +5.5V supply or dual ±1.15V to ±3.00V supplies. For single-supply operation, bypass the power supply VS with a ceramic capacitor (i.e. 0.01μF to 0.1μF) which should be placed close (within 2mm for good high frequency performance) to the VS pin. For dual-supply operation, both the VS+ and the VS– supplies should be bypassed to ground with separate 0.1μF ceramic capacitors. A bulk capacitor (i.e. 2.2μF or larger tantalum capacitor) within 100mm to provide large, slow currents and better performance. This bulk capacitor can be shared with other analog parts. Good PC board layout techniques optimize performance by decreasing the amount of stray capacitance at the op-amp’s inputs and output. To decrease stray capacitance, minimize trace lengths and widths by placing external components as close to the device as possible. Use surface-mount components whenever possible. For the op-amp, soldering the part to the board directly is strongly recommended. Try to keep the high frequency big current loop area small to minimize the EMI (electromagnetic interfacing). GROUNDING A ground plane layer is important for the HTC863x circuit design. The length of the current path speed currents in an inductive ground return will create an unwanted voltage noise. Broad ground plane areas will reduce the parasitic inductance. INPUT-TO-OUTPUT COUPLING To minimize capacitive coupling, the input and output signal traces should not be parallel. This helps reduce unwanted positive feedback. Typical Application Circuits DIFFERENTIAL AMPLIFIER R2 R1 Vn HTC863x VOUT Vp R3 The HTC863x family is well suited for conditioning sensor signals in battery-powered applications. Figure 6 shows a two op-amp instrumentation amplifier, using the HTC863x op-amps. The circuit works well for applications requiring rejection of common-mode noise at higher gains. The reference voltage (VREF) is supplied by a low-impedance source. In single voltage supply applications, the VREF is typically VS/2. BUFFERED CHEMICAL SENSORS R4 VREF Figure 5. Differential Amplifier The circuit shown in Figure 5 performs the difference function. If the resistors ratios are equal R4/R3 = R2/R1, then: VOUT = (Vp – Vn) × R2/R1 + VREF INSTRUMENTATION AMPLIFIER Figure 7. Buffered pH Probe VOUT =(V1  V2 )(1  R1 2 R1  )  VREF R2 RG Figure 6. Instrumentation Amplifier 9 The HTC863x family has input bias current in the pA range. This is ideal in buffering high impedance chemical sensors, such as pH probes. As an example, the circuit in Figure 7 eliminates expansive low-leakage cables that that is required to connect a pH probe (general purpose combination pH probes, e.g Corning 476540) to metering ICs such as ADC, AFE and/or MCU. An HTC863x op-amp CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Huatech (and design) is a registered trademark of Huatech Semiconductor Inc. Copyright Huatech Semiconductor Inc. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. FN1615-31 (v.2.a) HTC8631, HTC8632, HTC8634 420μA, 6.5MHz, RRIO CMOS Operational Amplifiers Typical Application Circuits (continued) and a lithium battery are housed in the probe assembly. A conventional low-cost coaxial cable can be used to carry the op-amp’s output signal to subsequent ICs for pH reading. At the same time, the op-amp’s bandwidth should be much greater than the PWM frequency, like 10 time at least. tSR tSMP SHUNT-BASED CURRENT SENSING AMPLIFIER The current sensing amplification shown in Figure 8 has a slew rate of 2πfVPP for the output of sine wave signal, and has a slew rate of 2fVPP for the output of triangular wave signal. In most of motor control systems, the PWM frequency is at 10kHz to 20kHz, and one cycle time is 100μs for a 10kHz of PWM frequency. In current shunt monitoring for a motor phase, the phase current is converted to a phase voltage signal for ADC sampling. This sampling voltage signal must be settled before entering the ADC. As the Figure 8 shown, the total settling time of a current shunt monitor circuit includes: the rising edge delay time (tSR) due to the op-amp’s slew rate, and the measurement settling time (tSET). If the minimum duty cycle of the PWM is defined at 5%, and the tSR is required at 20% of a total time window for a phase current monitoring, in case of a 3.3V motor control system (3.3V MCU with 12-bit ADC), the op-amp’s slew rate should be more than: 3.3V / (100μs× 5% × 20%) = 3.3 V/μs 10 VBUS tSET High side switch tSR – Time delay due to op-amp slew rate tSET – Measurement settling time tSMP – Sampling time window To Motor Phase VM Low side switch R1 C1 RSHUNT R2 HTC863x R3 R4 To MCU ADC pin R5 C2 Filter Offset Amplification Figure 8. Current Shunt Monitor Circuit CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Huatech (and design) is a registered trademark of Huatech Semiconductor Inc. Copyright Huatech Semiconductor Inc. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. FN1615-31 (v.2.a) HTC8631, HTC8632, HTC8634 420μA, 6.5MHz, RRIO CMOS Operational Amplifiers Package Outlines SC70-5 (SOT353) A2 A Symbol A1 D e1 A A1 A2 b C D E E1 e e1 L L1 θ θ e L E1 E L1 b Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 typ. 1.200 1.400 0.525 ref. 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 typ. 0.047 0.055 0.021 ref. 0.010 0.018 0° 8° Dimensions In Millimeters Min Max 1.040 1.350 0.040 0.150 1.000 1.200 0.380 0.480 0.110 0.210 2.720 3.120 1.400 1.800 2.600 3.000 0.950 typ. 1.900 typ. 0.700 ref. 0.300 0.600 0° 8° Dimensions In Inches Min Max 0.042 0.055 0.002 0.006 0.041 0.049 0.015 0.020 0.004 0.009 0.111 0.127 0.057 0.073 0.106 0.122 0.037 typ. 0.078 typ. 0.028 ref. 0.012 0.024 0° 8° C SOT23-5 Symbol A A1 A2 b c D E E1 e e1 L L1 θ 11 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Huatech (and design) is a registered trademark of Huatech Semiconductor Inc. Copyright Huatech Semiconductor Inc. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. FN1615-31 (v.2.a) HTC8631, HTC8632, HTC8634 420μA, 6.5MHz, RRIO CMOS Operational Amplifiers Package Outlines (continued) MSOP-8 Symbol A A1 A2 b C D E E1 e L θ Dimensions In Millimeters Min Max 0.800 1.100 Dimensions In Inches Min Max 0.033 0.045 0.050 0.750 0.290 0.150 2.900 2.900 4.700 0.650 0.400 0° 0.002 0.031 0.012 0.006 0.118 0.118 0.192 0.026 0.016 0° 0.150 0.950 0.380 0.200 3.100 3.100 5.100 typ. 0.700 8° 0.006 0.039 0.016 0.008 0.127 0.127 0.208 typ. 0.029 8° SO-8 A2 A A1 D b Symbol e A A1 A2 b C D E E1 e L θ L E E1 θ 12 Dimensions In Millimeters Min Max 1.370 1.670 0.070 0.170 1.300 1.500 0.306 0.506 0.203 typ. 4.700 5.100 3.820 4.020 5.800 6.200 1.270 typ. 0.450 0.750 0° 8° Dimensions In Inches Min Max 0.056 0.068 0.003 0.007 0.053 0.061 0.013 0.021 0.008 typ. 0.192 0.208 0.156 0.164 0.237 0.253 0.050 typ. 0.018 0.306 0° 8° C CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Huatech (and design) is a registered trademark of Huatech Semiconductor Inc. Copyright Huatech Semiconductor Inc. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. FN1615-31 (v.2.a) HTC8631, HTC8632, HTC8634 420μA, 6.5MHz, RRIO CMOS Operational Amplifiers Package Outlines (continued) TSSOP-14 Symbol A A1 A2 A3 b C D E E1 e L1 L θ Dimensions In Millimeters Min Max 1.200 0.050 0.150 0.900 1.050 0.390 0.490 0.200 0.290 0.130 0.180 4.860 5.060 6.200 6.600 4.300 4.500 0.650 typ. 1.000 ref. 0.450 0.750 0° 8° Dimensions In Inches Min Max 0.0472 0.002 0.006 0.037 0.043 0.016 0.020 0.008 0.012 0.005 0.007 0.198 0.207 0.253 0.269 0.176 0.184 0.0256 typ. 0.0393 ref. 0.018 0.031 0° 8° Dimensions In Millimeters Min Max 1.450 1.850 0.100 0.300 1.350 1.550 0.550 0.750 0.406 typ. 0.203 typ. 8.630 8.830 5.840 6.240 3.850 4.050 1.270 typ. 1.040 ref. 0.350 0.750 2° 8° Dimensions In Inches Min Max 0.059 0.076 0.004 0.012 0.055 0.063 0.022 0.031 0.017 typ. 0.008 typ. 0.352 0.360 0.238 0.255 0.157 0.165 0.050 typ. 0.041 ref. 0.014 0.031 2° 8° SO-14 Symbol A A1 A2 A3 b C D E E1 e L1 L θ 13 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Huatech (and design) is a registered trademark of Huatech Semiconductor Inc. Copyright Huatech Semiconductor Inc. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. FN1615-31 (v.2.a)
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