HTC321, HTC358, HTC324
1MHz General Purpose, RRIO CMOS Amplifiers
General Description
The HTC321 (single), HTC358 (dual) and HTC324 (quad) are general purpose, low offset,
high frequency response and micro power operational amplifiers. With an excellent
bandwidth of 1MHz, a slew rate of 1V/μs, and a quiescent current of 65μA per amplifier at
5V, the HTC321/358/324 family can be designed into a wide range of applications.
The HTC321/358/324 op-amps are designed to provide optimal performance in low
voltage and low power systems. The input common-mode voltage range includes ground,
and the maximum input offset voltage are 4.0mV. These parts provide rail-to-rail output
swing into heavy loads. The HTC321/358/324 family is specified for single or dual power
supplies of of +2.3V to +5.5V. All models are specified over the extended industrial
temperature range of −40℃ to +125℃.
The HTC321 is available in 5-lead SOT-23 package. The HTC358 is available in 8-lead
SOIC package. The HTC324 is available in 14-lead SOIC package.
Features and Benefits
General Purpose 1 MHz Amplifiers, Low Cost
High Slew Rate: 1 V/μs
Low Offset Voltage: 4.8 mV Maximum
Low Power: 65 μA per Amplifier Supply Current
Settling Time to 0.1% with 2V Step: 4.1 μs
Unit Gain Stable
Rail-to-Rail Input and Output
– Input Voltage Range: -0.1 to +5.1 V at 5V Supply
Operating Power Supply: +2.3 V to +5.5 V
Operating Temperature Range: −40℃ to +125℃
ESD Rating: HBM – 4kV, CDM – 2kV
Upgrade to LMV321/LMV358/LMV324 Family
Smoke/Gas/Environment Sensors
Audio Outputs
Battery and Power Supply Control
Portable Equipments and Mobile Devices
Active Filters
Sensor Interfaces
Battery-Powered Instrumentation
Medical instrumentation
Applications
Pin Configurations (Top View)
﹢IN
1
﹣VS
2
﹣IN
3
HTC321
HTC358
HTC324
SOT23-5
SO-8
SO-14
5
4
﹢VS
OUT
OUT A
1
﹣IN A
2
﹢IN A
3
﹣VS
4
A
B
8
﹢VS
OUT A
1
7
OUT B
﹣IN A
2
6
﹣IN B
﹢IN A
﹢IN B
﹢VS
﹢IN B
5
5
14
OUT D
13
﹣IN D
3
12
﹢IN D
4
11
﹣VS
10
﹢IN C
A
B
1
HUATECH
SEMICONDUCTOR
D
C
﹣IN B
6
9
﹣IN C
OUT B
7
8
OUT C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Huatech (and design) is a registered trademark of Huatech Semiconductor Inc.
Copyright Huatech Semiconductor Inc. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-32 (v.2.b)
HTC321, HTC358, HTC324
1MHz General Purpose, RRIO CMOS Amplifiers
Pin Description
Symbol
Description
–IN
Inverting Input of the Amplifier. The Voltage range can go from (VS– – 0.1V) to (VS+ +
0.1V).
+IN
Non-Inverting Input of Amplifier. This pin has the same voltage range as –IN.
+VS
Positive Power Supply. The voltage is from 2.3V to 5.5V. Split supplies are possible as
long as the voltage between VS+ and VS– is between 2.3V and 5.5V. A bypass
capacitor of 0.1μF as close to the part as possible should be used between power
supply pins or between supply pins and ground.
–VS
Negative Power Supply. It is normally tied to ground. It can also be tied to a voltage
other than ground as long as the voltage between VS+ and VS– is from 2.3V to 5.5V. If it
is not connected to ground, bypass it with a capacitor of 0.1μF as close to the part as
possible.
OUT
Amplifier Output.
N/C
No Connection.
Ordering Information
Type Number
Package Name
Package Quantity
Marking Code
HTC321XT5/R6
SOT23-5
Tape and Reel, 3 000
C41B
HTC358XS8/R8
SO-8
Tape and Reel, 4 000
C42X
HTC324XS14/R5
SO-14
Tape and Reel, 2 500
C44X
Limiting Value
In accordance with the Absolute Maximum Rating System (IEC 60134).
Parameter
Absolute Maximum Rating
Supply Voltage, VS+ to VS–
7.0V
Common-Mode Input Voltage
VS– – 0.5V to VS+ + 0.5V
Storage Temperature Range
–65℃ to +150℃(TJ)
Junction Temperature
160℃
Lead Temperature Range (Soldering 10 sec)
260℃
HBM ±4 000V
Electrostatic Discharge Voltage
CDM ±2 000V
MM ±400V
NOTE 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These
are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those
indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods
may affect device reliability.
NOTE 2: Provided device does not exceed maximum junction temperature (TJ) at any time.
2
HUATECH
SEMICONDUCTOR
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Huatech (and design) is a registered trademark of Huatech Semiconductor Inc.
Copyright Huatech Semiconductor Inc. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-32 (v.2.b)
HTC321, HTC358, HTC324
1MHz General Purpose, RRIO CMOS Amplifiers
Electrical Characteristics
VS = 5.0V, TA = +25℃, VCM = VS /2, VO = VS /2, and RL = 10kΩ connected to VS /2, unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = −40 to +125 ℃.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
±1.0
+4.5
Unit
INPUT CHARACTERISTICS
VOS
Input offset voltage
-4.5
over Temperature
-4.8
VOS TC
Offset voltage drift
over Temperature
1
over Temperature
IOS
Input offset current
VCM
Common-mode voltage
range
Common-mode rejection
ratio
over Temperature
over Temperature
AVOL
Open-loop voltage gain
over Temperature
RIN
Input resistance
CIN
Input capacitance
800
1
VS––0.1
VCM = 0.05V to 3.5V
74
VCM = VS––0.1 to VS++0.1 V
VO = 0.05 to 3.5 V
pA
pA
VS++0.1
V
90
69
66
mV
μV/℃
2.3
Input bias current
IB
CMRR
+4.8
dB
80
60
96
112
86
dB
GΩ
100
Differential
2.0
Common mode
3.5
pF
OUTPUT CHARACTERISTICS
VOH
High output voltage swing
VS+–8
mV
VOL
Low output voltage swing
8
mV
ZOUT
ISC
Closed-loop output
impedance
f = 200kHz, G = +1
0.4
Open-loop output
impedance
f = 1MHz, IO = 0
2.6
Source current through 10Ω
50
Sink current through 10Ω
40
Short-circuit current
Ω
mA
DYNAMIC PERFORMANCE
GBW
Gain bandwidth product
f = 1kHz
1.0
MHz
ΦM
Phase margin
CL = 100pF
66
°
SR
Slew rate
G = +1, CL = 100pF, VO = 1.5V to 3.5V
1.0
V/μs
tS
Settling time
tOR
Overload recovery time
THD+N
Total harmonic distortion +
f = 1kHz, G = +1, VO = 3VPP
noise
0.5
To 0.1%, G = +1, 2V step
4.1
To 0.01%, G = +1, 2V step
5.1
VIN * Gain > VS
μs
2
μs
0.0023
%
10
μVP-P
NOISE PERFORMANCE
Vn
Input voltage noise
3
f = 0.1 to 10 Hz
HUATECH
SEMICONDUCTOR
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Huatech (and design) is a registered trademark of Huatech Semiconductor Inc.
Copyright Huatech Semiconductor Inc. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-32 (v.2.b)
HTC321, HTC358, HTC324
1MHz General Purpose, RRIO CMOS Amplifiers
Electrical Characteristics (continued)
VS = 5.0V, TA = +25℃, VCM = VS /2, VO = VS /2, and RL = 10kΩ connected to VS /2, unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = −40 to +125 ℃.
Symbol
Parameter
Conditions
en
Input voltage noise
density
f = 1kHz
In
Input current noise density f = 10kHz
Min.
Typ.
Max.
Unit
30
nV/√Hz
4
fA/√Hz
POWER SUPPLY
VS
Operating supply voltage
PSRR
Power supply rejection
ratio
over Temperature
IQ
2.3
VS = 2.7V to 5.5V, VCM < VS+ − 2V
80
5.5
98
V
dB
70
Quiescent current (per
amplifier)
65
over Temperature
90
μA
95
THERMAL CHARACTERISTICS
TA
Operating temperature
range
θJA
Package Thermal
Resistance
-40
+125
SOT23-5
190
SO-8
125
SO-14
115
℃
℃/W
Specifications subject to changes without notice.
4
HUATECH
SEMICONDUCTOR
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Huatech (and design) is a registered trademark of Huatech Semiconductor Inc.
Copyright Huatech Semiconductor Inc. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-32 (v.2.b)
HTC321, HTC358, HTC324
1MHz General Purpose, RRIO CMOS Amplifiers
Typical Performance Characteristics
At TA = +25℃, VCM = VS /2, and RL = 10kΩ connected to VS /2, unless otherwise noted.
120
2,000 Samples
VS = 5V
VCM = 0.05V
500
Quiescent Current (μA)
Number of Amplifiers
600
400
300
200
100
0
110
100
90
80
70
60
50
40
30
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
0.5
1
1.5
2
2.5
3
3.5
20
1.5
2.5
Input Offset Voltage (mV)
4.5
5.5
6.5
Supply Voltage (V)
Input Offset Voltage Production Distribution.
Quiescent Current as a function of Supply Voltage.
60
Short-circuit Current (mA)
90
Quiescent current (μA)
3.5
85
80
75
70
65
60
-50
0
50
100
150
Temperature (℃)
50
+ISC
40
30
-ISC
20
10
0
2
2.5
3
3.5
4
4.5
5
Supply Voltage (V)
Quiescent Current as a function of Temperature.
Short-circuit Current as a function of Supply Voltage.
Short-circuit Current (mA)
70
65
+ISC
60
55
50
45
-ISC
40
35
30
25
20
-50
-25
0
25
50
75
100 125 150
Temperature (℃)
Short-circuit Current as a function of Temperature.
5
HUATECH
SEMICONDUCTOR
Output Voltage Swing as a function of Output
Current.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Huatech (and design) is a registered trademark of Huatech Semiconductor Inc.
Copyright Huatech Semiconductor Inc. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-32 (v.2.b)
HTC321, HTC358, HTC324
1MHz General Purpose, RRIO CMOS Amplifiers
Typical Performance Characteristics (continued)
120
180
100
150
80
120
60
90
40
60
20
30
0
0
-20
Phase (deg)
AVOL (dB)
At TA = +25℃, VCM = VS /2, and RL = 10kΩ connected to VS /2, unless otherwise noted.
-30
-40
1
10
100
1k
-60
10k 100k 1M 10M
Frequency (Hz)
Open-loop Gain and Phase as a function of
Frequency.
Input Bias Current as a function of Temperature.
200
100
CMRR
Voltage Noise (nV/√Hz)
PSRR and CMRR (dB)
120
80
60
PSRR
40
20
0
-20
180
160
140
120
100
80
60
40
20
1
10
100
1k
10k 100k
1M
10M
10
Frequency (Hz)
100
1k
10k
100k
Frequency (Hz)
Power Supply and Common-mode Rejection Ratio
as a function of Frequency.
Input Voltage Noise Spectral Density as a function of
Frequency.
1V/div
0.5V/div
CL=100pF
5μs/div
Large Signal Step Response.
6
HUATECH
SEMICONDUCTOR
5μs/div
Small Signal Step Response.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Huatech (and design) is a registered trademark of Huatech Semiconductor Inc.
Copyright Huatech Semiconductor Inc. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-32 (v.2.b)
HTC321, HTC358, HTC324
1MHz General Purpose, RRIO CMOS Amplifiers
Application Notes
LOW INPUT BIAS CURRENT
6.0
PCB SURFACE LEAKAGE
In applications where low input bias current is critical,
Printed Circuit Board (PCB) surface leakage effects need to
be considered. Surface leakage is caused by humidity, dust
or other contamination on the board. Under low humidity
conditions, a typical resistance between nearby traces is
1012Ω. A 5V difference would cause 5pA of current to flow,
which is greater than the HTC321/358/324’s input bias
current at +25℃ (±1fA, typical). It is recommended to use
multi-layer PCB layout and route the op-amp’s –IN and +IN
signal under the PCB surface.
The effective way to reduce surface leakage is to use a
guard ring around sensitive pins (or traces). The guard ring
is biased at the same voltage as the sensitive pin. An
example of this type of layout is shown in Figure 1 for
Inverting Gain application.
1. For Non-Inverting Gain and Unity-Gain Buffer:
a) Connect the non-inverting pin (+IN) to the input with
a wire that does not touch the PCB surface.
b) Connect the guard ring to the inverting input pin (–
IN). This biases the guard ring to the Common
Mode input voltage.
2. For Inverting Gain and Trans-impedance Gain Amplifiers
(convert current to voltage, such as photo detectors):
a) Connect the guard ring to the non-inverting input
pin (+IN). This biases the guard ring to the same
reference voltage as the op-amp (e.g., VS/2 or
ground).
b) Connect the inverting pin (–IN) to the input with a
wire that does not touch the PCB surface.
Guard Ring
+IN
–IN
+VS
Figure 1. Use a guard ring around sensitive pins
GROUND SENSING AND RAIL TO RAIL
The input common-mode voltage range of the HTC321/358
/324 series extends 100mV beyond the supply rails. This is
achieved with a complementary input stage—an N-channel
input differential pair in parallel with a P-channel differential
pair. For normal operation, inputs should be limited to this
range. The absolute maximum input voltage is 500mV
beyond the supplies. Inputs greater than the input commonmode range but less than the maximum input voltage, while
not valid, will not cause any damage to the op-amp. Unlike
some other op-amps, if input current is limited, the inputs
may go beyond the supplies without phase inversion, as
shown in Figure 2. Since the input common-mode range
extends from (VS− − 0.1V) to (VS+ + 0.1V), the HTC321/358
/324 op-amps can easily perform ‘true ground’ sensing.
7
HUATECH
SEMICONDUCTOR
5.0
AMPLITUDE (V)
The HTC321/358/324 family is a CMOS op-amp family and
features very low input bias current in pA range. The low
input bias current allows the amplifiers to be used in
applications with high resistance sources. Care must be
taken to minimize PCB Surface Leakage. See below
section on “PCB Surface Leakage” for more details.
4.0
3.0
2.0
1.0
0.0
-1.0
0
10
20
30
40
50
60
TIME (ms)
Figure 2. No Phase Inversion with Inputs Greater Than the
Power-Supply Voltage
A topology of class AB output stage with common-source
transistors is used to achieve rail-to-rail output. For light
resistive loads (e.g. 100kΩ), the output voltage can typically
swing to within 5mV from the supply rails. With moderate
resistive loads (e.g. 10kΩ), the output can typically swing to
within 10mV from the supply rails and maintain high openloop gain. See the Typical Characteristic curve, Output
Voltage Swing as a function of Output Current, for more
information.
The maximum output current is a function of total supply
voltage. As the supply voltage to the amplifier increases, the
output current capability also increases. Attention must be
paid to keep the junction temperature of the IC below 150℃
when the output is in continuous short-circuit. The output of
the amplifier has reverse-biased ESD diodes connected to
each supply. The output should not be forced more than
0.5V beyond either supply, otherwise current will flow
through these diodes.
CAPACITIVE LOAD AND STABILITY
The HTC321/358/324 can directly drive 1nF in unity-gain
without oscillation. The unity-gain follower (buffer) is the
most sensitive configuration to capacitive loading. Direct
capacitive loading reduces the phase margin of amplifiers
and this results in ringing or even oscillation. Applications
that require greater capacitive drive capability should use an
isolation resistor between the output and the capacitive load
like the circuit in Figure 3. The isolation resistor RISO and the
load capacitor CL form a zero to increase stability. The
bigger the RISO resistor value, the more stable VOUT will be.
Note that this method results in a loss of gain accuracy
because RISO forms a voltage divider with the RL.
RISO
VOUT
VIN
CL
Figure 3. Indirectly Driving Heavy Capacitive Load
An improvement circuit is shown in Figure 4. It provides DC
accuracy as well as AC stability. The RF provides the DC
accuracy by connecting the inverting signal with the output.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Huatech (and design) is a registered trademark of Huatech Semiconductor Inc.
Copyright Huatech Semiconductor Inc. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-32 (v.2.b)
HTC321, HTC358, HTC324
1MHz General Purpose, RRIO CMOS Amplifiers
Application Notes (continued)
The CF and RISO serve to counteract the loss of phase
margin by feeding the high frequency component of the
output signal back to the amplifier’s inverting input, thereby
preserving phase margin in the overall feedback loop.
CF
RF
RISO
VOUT
VIN
RL
CL
Figure 4. Indirectly Driving Heavy Capacitive Load with DC
Accuracy
For no-buffer configuration, there are two others ways to
increase the phase margin: (a) by increasing the amplifier’s
gain, or (b) by placing a capacitor in parallel with the
feedback resistor to counteract the parasitic capacitance
associated with inverting node.
POWER SUPPLY LAYOUT AND BYPASS
The HTC321/358/324 family operates from either a single of
+2.3V to +5.5V supply or dual ±1.15V to ±3.00V supplies.
For single-supply operation, bypass the power supply VS
with a ceramic capacitor (i.e. 0.01μF to 0.1μF) which should
be placed close (within 2mm for good high frequency
performance) to the VS pin. For dual-supply operation, both
the VS+ and the VS– supplies should be bypassed to ground
with separate 0.1μF ceramic capacitors. A bulk capacitor
(i.e. 2.2μF or larger tantalum capacitor) within 100mm to
provide large, slow currents and better performance. This
bulk capacitor can be shared with other analog parts.
Good PC board layout techniques optimize performance by
decreasing the amount of stray capacitance at the op-amp’s
inputs and output. To decrease stray capacitance, minimize
trace lengths and widths by placing external components as
close to the device as possible. Use surface-mount
components whenever possible. For the op-amp, soldering
the part to the board directly is strongly recommended. Try
to keep the high frequency big current loop area small to
minimize the EMI (electromagnetic interfacing).
GROUNDING
A ground plane layer is important for the HTC321/358/324
circuit design. The length of the current path speed currents
in an inductive ground return will create an unwanted
voltage noise. Broad ground plane areas will reduce the
parasitic inductance.
INPUT-TO-OUTPUT COUPLING
To minimize capacitive coupling, the input and output signal
traces should not be parallel. This helps reduce unwanted
positive feedback.
Typical Application Circuits
The HTC321/358/324 family is well suited for conditioning
sensor signals in battery-powered applications. Figure 6
shows a two op-amp instrumentation amplifier, using the
HTC358 op-amps. The circuit works well for applications
requiring rejection of common-mode noise at higher gains.
The reference voltage (VREF) is supplied by a lowimpedance source. In single voltage supply applications, the
VREF is typically VS/2.
DIFFERENTIAL AMPLIFIER
R2
R1
Vn
VOUT
Vp
R3
BUFFERED CHEMICAL SENSORS
R4
VREF
Coax
Figure 5. Differential Amplifier
The circuit shown in Figure 5 performs the difference
function. If the resistors ratios are equal R4/R3 = R2/R1, then:
VOUT = (Vp – Vn) × R2/R1 + VREF
3V
R1
10MΩ
To ADC,
AFE or MCU
pH
PROBE
INSTRUMENTATION AMPLIFIER
R2
10MΩ
RG
VREF
R1
R2
R2
R1
All components contained within the pH probe
V1
HTC358
Figure 7. Buffered pH Probe
HTC358
VOUT
V2
VOUT =(V1 − V2 )(1 +
R1 2 R1
+
) + VREF
R2 RG
Figure 6. Instrumentation Amplifier
8
HUATECH
SEMICONDUCTOR
The HTC321/358/324 family has input bias current in the pA
range. This is ideal in buffering high impedance chemical
sensors, such as pH probes. As an example, the circuit in
Figure 7 eliminates expansive low-leakage cables that that
is required to connect a pH probe (general purpose
combination pH probes, e.g Corning 476540) to metering
ICs such as ADC, AFE and/or MCU. An HTC321/358/324
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Huatech (and design) is a registered trademark of Huatech Semiconductor Inc.
Copyright Huatech Semiconductor Inc. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-32 (v.2.b)
HTC321, HTC358, HTC324
1MHz General Purpose, RRIO CMOS Amplifiers
Typical Application Circuits (continued)
op-amp and a lithium battery are housed in the probe
assembly. A conventional low-cost coaxial cable can be
used to carry the op-amp’s output signal to subsequent ICs
for pH reading.
At the same time, the op-amp’s bandwidth should be much
greater than the PWM frequency, like 10 time at least.
SHUNT-BASED CURRENT SENSING AMPLIFIER
The current sensing amplification shown in Figure 8 has a
slew rate of 2πfVPP for the output of sine wave signal, and
has a slew rate of 2fVPP for the output of triangular wave
signal. In most of motor control systems, the PWM
frequency is at 10kHz to 20kHz, and one cycle time is
100μs for a 10kHz of PWM frequency. In current shunt
monitoring for a motor phase, the phase current is
converted to a phase voltage signal for ADC sampling. This
sampling voltage signal must be settled before entering the
ADC. As the Figure 8 shown, the total settling time of a
current shunt monitor circuit includes: the rising edge delay
time (tSR) due to the op-amp’s slew rate, and the
measurement settling time (tSET). For a 3-shunt solution in
motor phase current sensing, if the smaller duty cycle of the
PWM is defined at 45% (In fact, the phase with minimum
PWM duty cycle, such as 5%, is not detected current
directly, and it can be calculated from the other two phase
currents), and the tSR is required at 20% of a total time
window for a phase current monitoring, in case of a 3.3V
motor control system (3.3V MCU with 12-bit ADC), the opamp’s slew rate should be more than:
3.3V / (100μs× 45% × 20%) = 0.37 V/μs
9
HUATECH
SEMICONDUCTOR
tSMP
tSR
VBUS
tSET
High side
switch
tSR – Time delay due to op-amp slew rate
tSET – Measurement settling time
tSMP – Sampling time window
To Motor Phase
VM
Low side
switch
R2
R1
C1
RSHUNT
HTC358
R3
R4
To MCU
ADC pin
R5
C2
Filter
Offset
Amplification
Figure 8. Current Shunt Monitor Circuit
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Huatech (and design) is a registered trademark of Huatech Semiconductor Inc.
Copyright Huatech Semiconductor Inc. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-32 (v.2.b)
HTC321, HTC358, HTC324
1MHz General Purpose, RRIO CMOS Amplifiers
Package Outlines
SOT23-5
A2
A
A1
D
e1
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
θ
L
E1
E
L1
b
e
Dimensions
In Millimeters
Min
Max
1.040
1.350
0.040
0.150
1.000
1.200
0.380
0.480
0.110
0.210
2.720
3.120
1.400
1.800
2.600
3.000
0.950 typ.
1.900 typ.
0.700 ref.
0.300
0.600
0°
8°
Dimensions
In Inches
Min
Max
0.042
0.055
0.002
0.006
0.041
0.049
0.015
0.020
0.004
0.009
0.111
0.127
0.057
0.073
0.106
0.122
0.037 typ.
0.078 typ.
0.028 ref.
0.012
0.024
0°
8°
Dimensions
In Millimeters
Min
Max
1.370
1.670
0.070
0.170
1.300
1.500
0.306
0.506
0.203 typ.
4.700
5.100
3.820
4.020
5.800
6.200
1.270 typ.
0.450
0.750
0°
8°
Dimensions
In Inches
Min
Max
0.056
0.068
0.003
0.007
0.053
0.061
0.013
0.021
0.008 typ.
0.192
0.208
0.156
0.164
0.237
0.253
0.050 typ.
0.018
0.306
0°
8°
C
SO-8
A2
A
A1
D
b
Symbol
e
A
A1
A2
b
C
D
E
E1
e
L
θ
L
E
E1
θ
10
HUATECH
SEMICONDUCTOR
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Huatech (and design) is a registered trademark of Huatech Semiconductor Inc.
Copyright Huatech Semiconductor Inc. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-32 (v.2.b)
HTC321, HTC358, HTC324
1MHz General Purpose, RRIO CMOS Amplifiers
Package Outlines
SO-14
A3
A2
A
A1
D
C
e
b
Symbol
L1 L
E
E1
θ
A
A1
A2
A3
b
C
D
E
E1
e
L1
L
θ
Dimensions
In Millimeters
Min
Max
1.450
1.850
0.100
0.300
1.350
1.550
0.550
0.750
0.406 typ.
0.203 typ.
8.630
8.830
5.840
6.240
3.850
4.050
1.270 typ.
1.040 ref.
0.350
0.750
2°
8°
Dimensions
In Inches
Min
Max
0.059
0.076
0.004
0.012
0.055
0.063
0.022
0.031
0.017 typ.
0.008 typ.
0.352
0.360
0.238
0.255
0.157
0.165
0.050 typ.
0.041 ref.
0.014
0.031
2°
8°
Important Notice
Huatech Semiconductor Inc and its subsidiaries (Huatech) reserve the right to make
corrections, enhancement,amelioration or other changes for them. Buyers should obtain the
latest relevant information before placing orders and should verify that such information is
current and complete.This condition is also applied to the process of sales contract.
Huatech promises that functions of its products match the scope of application described in
the product datasheet, Huatech promises that functions of its products match the scope of
application described in the product datasheet, and performs strict tests for all parameters
to guarantee the quality of products.
11
HUATECH
SEMICONDUCTOR
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Huatech (and design) is a registered trademark of Huatech Semiconductor Inc.
Copyright Huatech Semiconductor Inc. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
FN1615-32 (v.2.b)
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