AIES 12 U 02 0R2
Amotech Chip ESD Suppressor
Features
Overview
The Chip ESD-Suppressor is specially designed
to protect sensitive electronics from the threat of the
electrostatic discharge (ESD). The product reacts
almost instantly to the transient voltage and
effectively clamps it to the low voltage for the
• 0402inch/ 1005mm foot print
• Ideal ESD protection for high frequency, low
voltage applications.
• Exceeds testing requirements outlined in IEC
61000-4-2
duration of the ESD transient. The product uses
• Ultra low capacitance (0.2pF typ)
voltage variable material that inherently produce
• Very low leakage current
low capacitance and very low leakage current. Thus
• Fast response time
the device is virtually invisible to the circuit during
• Bi-directional
normal
• Surface mount
operational
mode.
It
is
especially
transparent to the high-speed digital circuits due to
• RoHS compliant for global applications.
the high off-state impedance and low capacitance.
Signals are not distorted or disrupted as shown by
extensive testing. Using the ESD-Suppressor ESD
protection, devices maintain signal integrity of highspeed data signals while protecting the circuit from
ESD. The nature of the material creates a bidirectional part, which means that only one device
Applications
• High Speed Data Ports
( USB 2.0, IEEE 1394 , HDMI/DVI )
• Computers & Peripherals
( Cell phone, PDA, HDTV, DVD players )
per surge path is required to provide complete ESD
protection regardless of the surge polarity.
Model Description
AIES
12
U
02
0R2
(1)
(2)
(3)
(4)
(5)
(1)
:
Series name, “AIES” Amotech Internal type ESD Suppressor.
(2)
:
Maximum continuous working voltage – Vdc, “12” means 12V
(3)
:
Capacitance Group, “U” means Ultra low capacitance
(4)
:
Chip size, “02” means 0402 ( 1.0 x 0.5 mm)
(5)
:
Capacitance “0R2” means 0.2pF
10/07/12(Rev. 00)
Amotech Corporation (www.amotech.co.kr)
1
AIES 12 U 02 0R2
Amotech Chip ESD Suppressor
Electrical characteristics
1. Electrical characteristics
Characteristic
Value
Rated Voltage
12Vdc typ
Clamping Voltage
1
65V typ,100V max
Capacitance (@1MHz)
0.20 pF typ, 0.30pF max.
Leakage Current (@12VDC)
1uA max.
ESD Capability
IEC61000-4-2 Direct Discharge
8kV typ.
IEC61000-4-2 Air Discharge
15kV typ.
ESD Pulse Withstand
1
>1,000 typ.
Operating Temperature
-40°C to +85°C
Notes
1 Per IEC61000-4-2, Level 4 waveform (8kV direct, 30A) measured 30ns after initiation of pulse.
Appearance
Terminal Electrode
Symbol
L
W
H
B
Size (mm)
1.0±0.1
0.5±0.1
0.3±0.05
0.2±0.1
10/07/12(Rev. 00)
Amotech Corporation (www.amotech.co.kr)
2
AIES 12 U 02 0R2
Amotech Chip ESD Suppressor
Recommended Land pattern (Typical Dimensions)
b
a
c
a
Symbol
a
b
c
Size (mm)
0.4
0.6
0.64
Recommended Soldering Method
- Pb Free Solder Paste : Sn / Ag / Cu ( 96.5 / 3.0 / 0.5)
10/07/12(Rev. 00)
Amotech Corporation (www.amotech.co.kr)
3
AIES 12 U 02 0R2
Amotech Chip ESD Suppressor
Equivalent circuit
2 Zener Diodes
Output
Input
A Capacitance content
ESD absorption characteristics (voltage waveform)
1800
Open Waveform
AIES 12U 02 0R2
1500
Voltage [V]
1200
900
600
300
0
0
20
40
60
80
100
Time [ns]
10/07/12(Rev. 00)
Amotech Corporation (www.amotech.co.kr)
4
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