WSD80120DN56

WSD80120DN56 N-Ch MOSFET General Description Product Summery The WSD80120DN56 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD80120DN56 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 85V 3.7mΩ 120A Applications High power DC/DC converters and switch mode power supply Features DC Motor control and Class D Amplifier z Advanced high cell density Trench technology z Super Low Gate Charge DFN5X6-8 Pin Configuration z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 85 V VGS Gate-Source Voltage ±25 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 120 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 96 A 384 A IDM .. Pulsed Drain Current TC=25°C EAS Avalanche Energy, Single pulse,L=0.5mH 320 mJ IAS Avalanche Current, Single pulse,L=0.5mH 180 A PD@TC=25℃ Total Power Dissipation 104 W PD@TC=100℃ Total Power Dissipation 53 W TSTG Storage Temperature Range -55 to 175 ℃ Operating Junction Temperature Range 175 ℃ TJ Thermal Data Symbol Parameter Typ. Max. Unit ℃/W ℃/W RθJA Thermal Resistance Junction-Ambient --- 20 RθJC Thermal Resistance Junction-Case --- 1.2 www.winsok.tw Page 1 Rev 1: May.2019 WSD80120DN56 N-Ch MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient Conditions = VGS=0V , ID 250uA Reference to 25℃ , ID=1mA = VGS=10V,ID 50A VGS=VDS , ID =250uA Min. Typ. Max. Unit 85 --- --- V --- 0.096 --- V/℃ --- 3.7 4.8 mΩ 2.0 3.0 4.0 V mV/℃ --- -5.5 --- VDS=85V , VGS=0V , TJ=25℃ --- --- 1 VDS=85V , VGS=0V , TJ=55℃ --- --- 10 uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±25V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.2 --- Ω Qg Total Gate Charge (10V) --- 54 --- Qgs Gate-Source Charge --- 17 --- --- 11 --- --- 21 --- Qgd Td(on) VDS=50V , VGS=10V , ID=10A Gate-Drain Charge Turn-On Delay Time nC Rise Time VDD=50V , VGS=10V , --- 18 --- Turn-Off Delay Time RG=1Ω,RL=1Ω,IDS=10A. --- 36 --- Fall Time --- 10 --- Ciss Input Capacitance --- 3750 --- Coss Output Capacitance --- 395 --- Crss Reverse Transfer Capacitance --- 180 --- Min. Typ. Max. Unit --- --- 86.7 A --- --- 1.2 V Tr Td(off) Tf VDS=40V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Current Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=15A , TJ=25℃ A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25° C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. www.winsok.tw Page 2 Rev 1: May.2019 WSD80120DN56 N-Ch MOSFET Typical Operating Characteristics www.winsok.tw Page 2 Rev 1: May.2019 WSD80120DN56 N-Ch MOSFET Typical Operating Characteristics www.winsok.tw Page 4 Rev 1: May.2019 WSD80120DN56 N-Ch MOSFET Typical Operating Characteristics www.winsok.tw Page 5 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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