WSF3055

WSF3055 N-Ch and P-Channel MOSFET Product Summery Description The WSF3055 uses advanced trench technology to VDS RDS(ON) ID provide excellent RDS(ON), low gate charge and 30 15mΩ 24A operation with gate voltages as low as 4.5V.This device -30 11mΩ -19.8A is suitable for use as a Battery protection or in other Application Switching application Motor Control. Protable equipment application. Features Synchronous Rectification. 1,100 % U IS + Rg Tested TO-252 Pin Configuration 2,Re liable and Rugged 3,Lead Free Available (RoHS Compliant) Absolute Maximum Ratings (T= 25°C unless otherwise noted) Parameter Symbol N Channel P Channel VDSS Drain-Source Voltage 30 -30 VGSS Gate-Source Voltage ±20 ±20 TC=25°C 24 -19.8 TC=100°C 15 -12.6 ID Continuous Drain Current PD Maximum Power Dissipation ID Continuous Drain Current IDMa Pulsed Drain Current PD Maximum Power Dissipation IS Diode Continuous Forward Current TJ Maximum Junction Temperature TC=25°C 18.9 TC=100°C 7.6 9 -7.6 TA=70°C 7.3 -6 TA=25°C 36 -30.4 2.78 TA=70°C 1.78 TC=25°C V A W TA=25°C TA=25°C Unit 3 A A W -3 A 150 TSTG Storage Temperature Range RƟJC Thermal Resistance-Junction to Case RƟJAb Thermal Resistance-Junction to Ambient °C -55 to 150 IASc Avalanche Current, Single pulse Steady State t ≤10s Steady State L=0.1mH EASc Avalanche Energy, Single pulse L=0.1mH 6.6 °C/W 45 °C/W 95 °C/W 13 19 A 8.5 18 mJ Note a：Pulse width limited by max. junction temperature. Note b：Surface mounted on 1in2 pad area. Note c：UIS tested and pulse width limited by maximum junction temperature 150°C(initial temperature Tj=25°C) www.winsok.tw Page 1 Rev1.0 May.2020 WSF3055 N-Ch and P-Channel MOSFET N Channel Electrical Characteristics (T= 25°C unless otherwise noted) Symbol Parameter Test Conditions N Channel Unit Min. Typ. Max. 30 - - V - - 50 A - - 5 mA 1.3 1.8 2.3 V Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) d Drain-Source Breakdown Voltage VGS=0V, IDS=250μA Zero Gate Voltage Drain Current VDS=24V, VGS=0V Gate Threshold Voltage VDS=VGS, IDS=250μA Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=10V, IDS=9A - 15 20 mΩ VGS=4.5V, IDS=8A - 18 23 mΩ 0.3 0.4 0.55 V - 11 - ns - 3.5 - nC - 3.3 - Ω - 395 514 - 105 - Drain-Source On-state Resistance TJ=85°C Diode Characteristics VSDd Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=1A, VGS=0V ISD=4.0A, dlSD/dt=100A/μs Dynamic Characteristics e RG Gate Resistance Ciss Input Capacitance VGS=0V,VDS=0V,f=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz Coss Output Capacitance Crss Reverse Transfer Capacitance - 42 - td(ON) Turn-on Delay Time - 5.5 - tr Turn-on Rise Time - 10.5 - td(OFF) Turn-off Delay Time - 15 - - 3.7 - - 4 - - 8.3 12.5 - 1.1 - - 1.8 - tf VDD=15V, RL=15　, IDS=1A, VGEN=10V, RG=6　 Turn-off Fall Time pF ns Gate Charge Characteristics e Qg Total Gate Charge Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V,VGS=4.5V, IDS=4A VDS=15V, VGS=10V, IDS=4.0A nC Note d：Pulse test ; pulse width:≤300μs, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Rev1.0 May.2020 WSF3055 N-Ch and P-Channel MOSFET N Channel Typical Operating Characteristics Drain Current 21 28 18 24 15 20 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 12 9 6 3 16 12 8 4 o 0 o TC=25 C 0 20 40 60 0 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TJ - Junction Temperature (°C) TJ- Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 300 Normalized Transient Thermal Resistance 3 100 ID - Drain Current (A) TC=25 C,VG=10V it m Li ) on s( Rd 100ms 10 300ms 1ms 10ms 1 DC o TC=25 C 0.1 0.1 1 10 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 Single Pulse o 1E-4 1E-6 100 VDS - Drain - Source Voltage (V) www.winsok.tw Duty = 0.5 1 RqJC :6.6 C/W 1E-5 1E-4 1E-3 0.01 0.1 0.5 Square Wave Pulse Duration (sec) Page 3 Rev1.0 May.2020 WSF3055 N-Ch and P-Channel MOSFET N Channel Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 48 40 VGS=4.5,5,6,7,8,9,10V 4V 24 3.5V 16 40 RDS(ON) - On - Resistance (W) ID - Drain Current (A) 32 8 3V 0 0.0 2.5V 0.5 1.0 1.5 2.0 2.5 16 8 0 5 10 15 20 25 Transfer Characteristics Gate Threshold Voltage 1.6 Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) VGS=10V ID - Drain Current (A) 60 50 40 30 20 3 4 5 6 7 8 9 30 IDS=250mA 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 10 VGS - Gate - Source Voltage (V) www.winsok.tw 24 0 3.0 IDS=9A 2 VGS=4.5V VDS - Drain-Source Voltage (V) 70 10 32 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Page 4 Rev1.0 May.2020 WSF3055 N-Ch and P-Channel MOSFET N Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance 30 1.8 VGS =10V IDS =9A 1.6 o Tj=150 C 10 1.4 IS - Source Current (A) Normalized On Resistance Source-Drain Diode Forward 1.2 1.0 0.8 1 o Tj=25 C 0.6 o RON@Tj=25 C: 18.5mW 0.4 -50 -25 0 25 50 0.1 0.0 75 100 125 150 0.8 1.0 Capacitance Gate Charge VDS=15V 9 I =4A DS VGS - Gate - source Voltage (V) Ciss 400 350 300 250 200 150 1.2 10 Frequency=1MHz 450 C - Capacitance (pF) 0.6 VSD - Source - Drain Voltage (V) 500 Coss Crss 50 0 0.4 TJ - Junction Temperature (°C) 550 100 0.2 8 7 6 5 4 3 2 1 0 5 10 15 20 0 0.0 25 3.0 4.5 6.0 7.5 9.0 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) www.winsok.tw 1.5 Page 5 Rev1.0 May.2020 WSF3055 N-Ch and P-Channel MOSFET P Channel Electrical Characteristics (T= 25°C unless otherwise noted) Symbol Parameter P Channel Test Conditions Unit Min. Typ. Max. -30 - - - - -1 - - -30 -1.3 -1.8 -2.3 V Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250μA Zero Gate Voltage Drain Current VGS( th) Gate Threshold Voltage VDS=-24V, VGS=0V TJ=85°C VDS=VGS, IDS=-250μA V 　A IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA RDS(ON)d Drain-Source On-state Resistance VGS=-10V, IDS=-7A - 11 14 mΩ VGS=-4.5V, IDS=-4A - 15 20 mΩ Diode Characteristics VSDd Diode Forward Voltage ISD=-1A, VGS=0V - -0.75 -1 V trr Reverse Recovery Time - 17 - ns Qrr Reverse Recovery Charge ISD=-7.0A, dlSD/dt=100A/μs - 9 - nC VGS=0V,VDS=0V,f=1MHz - 12 - Ω - 750 975 - 142 - Dynamic Characteristics e RG Gate Resistance Ciss Input Capacitance VGS=0V, VDS=-15V, Frequency=1.0MHz Coss Output Capacitance Crss Reverse Transfer Capacitance - 102 - td(ON) Turn-on Delay Time - 9 17 tr Turn-on Rise Time - 11 20 td( OFF) Turn-off Delay Time - 55 99 - 34 62 - 8 - tf VDD=-15V, RL=15　, IDS=-1A, VGEN =-10V, RG =6　 Turn-off Fall Time pF ns Gate Charge Characteristics e Qg Total Gate Charge VDS=-15V, VGS=-4.5V, IDS=7.0A Qg Total Gate Charge - 17 24 Qgth Threshold Gate Charge - 1 - Qgs Gate-Source Charge - 2 - Qgd Gate-Drain Charge - 4 - VDS=-15V, VGS=-10V, IDS=7.0A nC Note d：Pulse test ; pulse width　≤300μs, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 6 Rev1.0 May.2020 WSF3055 N-Ch and P-Channel MOSFET P Channel Typical Operating Characteristics Power Dissipation Drain Current 21 24 18 20 -ID - Drain Current (A) Ptot - Power (W) 15 12 9 6 16 12 8 4 3 o o 0 TC=25 C 0 20 40 60 40 60 80 100 120 140 160 Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance -ID - Drain Current (A) 20 TJ - Junction Temperature (°C) 100 it m Li ) on s( Rd 100ms 10 300ms 1ms 10ms 1 o TC=25 C 1 10 3 Duty = 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 DC Single Pulse o 1E-4 1E-6 100 -VDS - Drain - Source Voltage (V) www.winsok.tw 0 TJ- Junction Temperature (°C) 300 0.1 0.1 0 80 100 120 140 160 TC=25 C,VG=-10V RqJC :6.6 C/W 1E-5 1E-4 1E-3 0.01 0.1 0.5 Square Wave Pulse Duration (sec) Page 7 Rev1.0 May.2020 WSF3055 N-Ch and P-Channel MOSFET P Channel Typical Operating Characteristics (Cont.) Output Characteristics 30 Drain-Source On Resistance 60 VGS=-4.5,-5,-6,-7,-8,-9,-10V -4V 50 RDS(ON) - On - Resistance (W) -ID - Drain Current (A) 25 20 -3.5V 15 10 -3V 5 0 -2.5V 0 1 2 3 4 30 VGS=-10V 20 10 0 5 VGS=-4.5V 40 0 5 -VDS - Drain - Source Voltage (V) 1.6 IDS=-7A 25 30 IDS=-250mA 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) 20 Gate Threshold Voltage 100 80 60 40 20 0 15 -ID - Drain Current (A) Transfer Characteristics 120 10 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 -VGS - Gate - Source Voltage (V) www.winsok.tw 1.2 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Page 8 Rev1.0 May.2020 WSF3055 N-Ch and P-Channel MOSFET P Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance 1.8 30 VGS = -10V IDS = -7A 1.6 10 1.4 -IS - Source Current (A) Normalized On Resistance Source-Drain Diode Forward 1.2 1.0 0.8 o Tj=150 C o Tj=25 C 1 0.6 o RON@Tj=25 C: 24mW 0.4 -50 -25 0 25 50 0.1 0.0 75 100 125 150 Gate Charge VDS=-15V 9 I =-7A DS -VGS - Gate - source Voltage (V) C - Capacitance (pF) 800 Ciss 700 600 500 400 300 200 Coss Crss 5 1.5 10 900 8 7 6 5 4 3 2 1 10 15 20 0 0 25 3 6 9 12 15 18 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) www.winsok.tw 1.2 Capacitance Frequency=1MHz 0 0.9 -VSD - Source - Drain Voltage (V) 1000 0 0.6 TJ- Junction Temperature (°C) 1100 100 0.3 Page 9 Rev1.0 May.2020 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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