WST2300
N-Ch MOSFET
Product Summery
General Description
The WST2300 is the highest performance trench
N-Ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate
charge for most of the small power switching
and load switch applications.
BVDSS
RDSON
ID
20V
50mΩ
4.4A
Applications
The WST2300 meet the RoHS and Green
Product requirement with full function
reliability approved.
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
SOT-23 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=70℃
IDM
Rating
Units
Drain-Source Voltage
20
V
Gate-Source Voltage
±12
V
1
4.4
A
1
3.2
A
12
A
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
2
3
PD@TA=25℃
Total Power Dissipation
1.0
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
RθJA
Thermal Resistance Junction-ambient
RθJC
1
www.winsok.tw
Thermal Resistance Junction-Case
Page 1
1
Typ.
Max.
Unit
---
200
℃/W
---
75
℃/W
Rev:1.0 May.2019
WST2300
N-Ch MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
2
Static Drain-Source On-Resistance
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
20
---
---
V
Reference to 25℃ , ID=1mA
---
0.024
---
V/℃
VGS=4.5V , ID=1.8A
---
50
65
VGS=2.5V , ID=1.5A
---
60
75
70
90
0.3
0.85
1.2
V
mV/℃
VGS=1.8V , ID=1A
VGS(th)
△VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
VGS=VDS , ID =250uA
---
-2.51
---
VDS=16V , VGS=0V , TJ=25℃
---
---
1
VDS=16V , VGS=0V , TJ=55℃
---
---
5
mΩ
uA
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±8V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=3A
---
8.3
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.7
3.4
Ω
Qg
Total Gate Charge (4.5V)
---
6.4
---
Qgs
Gate-Source Charge
---
0.54
---
Qgd
Gate-Drain Charge
---
1.25
---
Td(on)
VDS=15V , VGS=4.5V , ID=1A
---
1.6
---
Rise Time
VDD=10V , VGS=4.5V , RG=3.3Ω
---
29.6
---
Turn-Off Delay Time
ID=1A
---
18.8
---
Fall Time
---
6
---
Ciss
Input Capacitance
---
382
---
Coss
Output Capacitance
---
41
---
Crss
Reverse Transfer Capacitance
---
33
---
Min.
Typ.
Unit
---
---
Max.
4.3
---
---
12
A
---
---
1.2
V
---
5.5
---
nS
---
1.8
---
nC
Tr
Td(off)
Tf
Turn-On Delay Time
nC
VDS=15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
IS
ISM
Parameter
Conditions
1,4
Continuous Source Current
2,4
Pulsed Source Current
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=2A , dI/dt=100A/µs , TJ=25℃
A
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper ,t
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