WSR80P06

WSR80P06 P-Ch MOSFET Product Summery General Description The WSR80P06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. BVDSS RDSON ID -60V 18mΩ -50A Applications zBattery protection /Load switch /Uninterruptible power supply Features TO-220AB Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V Continuous Drain Current, VGS @ -10V;TC=25°C -50 A Continuous Drain Current, VGS @ -10V;TC=100°C -34 A Diode Continuous Forward Current -20 A Avalanche Energy, Single pulse ;L=1mH 45 A ID Is IAS EAS Avalanche Energy, Single pulse;;L=1mH 101 mJ IDP Pulse Drain Current Tested ;Tc=25°C -90 A Maximum Power Dissipation;TC=25°C 86.8 W Maximum Power Dissipation;TC=100°C 35 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 1.44 ℃/W www.winsok.tw Typ. Page 1 Rev 1: May.2019 WSR80P06 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V VGS=-10V , ID=-18A --- 13 18 VGS=-4.5V , ID=-12A --- 18 25 -1.3 --- -3.0 VGS=VDS , ID =-250uA mΩ V VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-18A S Qg Total Gate Charge (-4.5V) Qgs Gate-Source Charge Qgd IDSS Drain-Source Leakage Current IGSS Td(on) Tr Td(off) Tf Ciss --- 23 --- --- 25 --- --- 6.7 --- Gate-Drain Charge --- 5.5 --- Turn-On Delay Time --- 38 --- VDS=-20V , VGS=-4.5V , ID=-12A uA nC Rise Time VDD=-15V , VGS=-10V , --- 23.6 --- Turn-Off Delay Time RG=3.3Ω, ID=-1A --- 100 --- --- 6.8 --- --- 3635 --- --- 224 --- --- 141 --- Min. Typ. Max. Unit --- --- -1.2 V Fall Time Input Capacitance VDS=-15V , VGS=0V , f=1MHz Coss Output Capacitance Crss Reverse Transfer Capacitance ns pF Diode Characteristics Symbol VSD Parameter 2 Diode Forward Voltage Conditions VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=-25V,VGS=-10V,L=0.1mH,IAS=-45A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 1: May.2019 WSR80P06 P-Ch MOSFET Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 12 10 VDS=-20V -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 ID=-12A 8 6 4 2 0 0 1 Fig.3 Source Drain Forward Characteristics 40 60 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized -VGS(th) 20 QG , Total Gate Charge (nC -VSD , Source-to-Drain Voltage (V) 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Page 3 Rev 1: May.2019 WSR80P06 P-Ch MOSFET Typical Characteristics 10000 100.00 F=1.0MHz 100us Ciss Capacitance (pF) 10.00 1ms 10ms 100ms DC -ID (A) 1000 1.00 Coss 100 Crss 0.10 Tc=25o C Single Pulse 0.01 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 0.1 25 Fig.7 Capacitance 1 10 -VDS (V) 100 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 PDM T 0.02 0.01 0.01 0.00001 TON D = TON/T TJpeak = TC + PDM x RθJC SINGLE PULSE 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.11 Unclamped Inductive Waveform Fig.10 Switching Time Waveform www.winsok.tw Page 4 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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