HA2-2705-5

5 5 4 4 3 AV = -10 Normalized Gain (dB) Normalized Gain (dB) 3 2 AV = -20 1 0 -1 AV = -40 -2 AV = -60 -3 AV = -80 -4 AV = -10 2 1 AV = -20 0 -1 AV = -40 -2 AV = -60 -3 AV = -80 -4 AV = -100 -5 AV = -100 -5 1k 1M 100k 10k 10M 100M 1k 1G 10k Frequency (Hz) 1M 10M 100M 1G Frequency (Hz) 5 5 4 4 3 3 2 AV = +10 1 0 AV = +200 -1 AV = +100 -2 AV = +40 -3 Normalized Gain (dB) Normalized Gain (dB) 100k 2 AV = +10 1 0 AV = +200 -1 AV = +100 -2 AV = +40 -3 AV = +30 AV = +30 -4 -4 AV = +20 AV = +20 -5 -5 1k 10k 100k 1M 10M Frequency (Hz) 100M 1G 1k 10k 100k 1M 10M Frequency (Hz) 100M 1G 70 -45 25°C PHASE -90 125°C -40°C 50 -135 125°C GAIN 40 -180 25°C 30 -225 20 -270 10 -315 0 100k 1M 10M 100M -360 1G Frequency (Hz) 5 5 33 pF 4 3 10 pF 2 1 5 pF 0 33 pF 4 15 pF Normalized Gain (dB) Normalized Gain (dB) 3 0 pF -1 -2 15 pF 10 pF 2 1 5 pF 0 0 pF -1 -2 -3 -3 -4 -4 -5 -5 1M 10M 1G 100M 1M Frequency (Hz) 5 4 4 3 Normalized Gain (dB) 0 pF 2 5 pF 1 0 -1 10 pF -2 10M 1G 100M Frequency (Hz) 5 3 Normalized Gain (dB) Gain (dB) 60 0 -40°C Phase (°) 80 15 pF -3 0 pF 2 5 pF 1 0 -1 10 pF -2 15 pF -3 33 pF -4 33 pF -4 -5 -5 1M 10M 100M Frequency (Hz) 1G 1M 10M 100M Frequency (Hz) 1G 5 5 4 4 3 VIN = 20 mV 1 0 -1 -2 VIN = 200 mV Normalized Gain (dB) Normalized Gain (dB) 3 2 -3 2 0 -1 -2 VIN = 200 mV -3 -4 -4 -5 -5 100k VIN = 20 mV 1 1M 10M 100M 100k 1G 1M 5 5 4 4 3 3 2 1 0 VIN = 20 mV -1 -2 -3 VIN = 200 mV 100M 1G 2 1 VIN = 20 mV 0 -1 -2 -3 -4 VIN = 200 mV -4 -5 -5 100k 1M 10M 100M 1G 100k 1M Frequency (Hz) 5 5 4 4 3 3 2 1 0 VIN = 20 mV -1 -2 -3 VIN = 200 mV 100M 1G 2 1 VIN = 20 mV 0 -1 -2 -3 -4 VIN = 200 mV -4 -5 100k 10M Frequency (Hz) Normalized Gain (dB) Normalized Gain (dB) 10M Frequency (Hz) Normalized Gain (dB) Normalized Gain (dB) Frequency (Hz) -5 1M 10M 100M Frequency (Hz) 1G 100k 1M 10M 100M Frequency (Hz) 1G 160 140 -40°C -40°C 140 120 120 ISOURCE (mA) ISOURCE (mA) 100 125°C 100 25°C 80 60 80 25°C 125°C 60 40 40 20 20 0 0 0 0.5 1 1.5 0 0.5 1 VOUT (V) 180 140 -40°C -40°C 160 120 25°C 140 125°C 100 120 ISOURCE (mA) ISOURCE (mA) 1.5 VOUT (V) 25°C 100 80 60 80 125°C 60 40 40 20 20 0 0 0 1 2 3 VOUT (V) 4 5 0 1 2 3 50 5 150 100 0 125°C 125°C 50 VOS (PV) -50 VOS (PV) 4 VOUT (V) 25°C -100 -150 -200 0 25°C -50 -100 -150 -40°C -40°C -250 -200 -250 -300 4 5 6 7 8 9 VSUPPLY (V) 10 11 12 4 5 6 7 8 9 VSUPPLY (V) 10 11 12 140 160 -40°C -40°C 140 120 120 125°C 25°C 100 125°C ISINK (mA) ISINK (mA) 100 80 60 40 25°C 80 60 40 20 20 0 0 -20 0 0.5 1 0 1.5 0.5 VOUT (V) 1 1.5 VOUT (V) 180 140 -40°C -40°C 160 120 140 ISINK (mA) 125°C ISINK (mA) 100 120 25°C 100 80 125°C 80 25°C 60 60 40 40 20 20 0 0 0 1 2 3 4 5 0 1 2 3 4 5 VOUT (V) 0.2 0 0.15 -20 0.1 -40 Crosstalk (dB) IOS (PA) VOUT (V) 25°C 0.05 125°C 0 -60 -80 -0.05 -100 -0.1 -120 -40°C CH 1 OUTPUT VS = ±2.5 V CH 2 OUTPUT VS = ±6 V -140 -0.15 4 5 6 7 8 9 VSUPPLY (V) 10 11 12 1k 10k 100k 1M Frequency (Hz) 10M 100M 0 0 -20 -20 HD2 -60 Distortion (dBc) Distortion (dBc) -40 VS = ±6 V, VO = 2 VPP -80 HD3 -100 -40 VS = ±6 V, -60 HD2 VO = 2 VPP -80 VS = ±2.5 V, VO = 1 VPP -100 -120 VS = ±2.5 V, VO = 1 VPP -140 100k 1M 10M HD3 -120 100k 100M 1M Frequency (Hz) 100M 10M Frequency (Hz) 0 -50 HD2 VS = ±6 V -20 VO = 2 VPP -60 -60 Distortion (dBc) Distortion (dBc) -40 HD2 VS = ±2.5 V, VO = 1 VPP -80 -70 -80 HD3 -100 VS = ±2.5 V -90 HD3 VO = 1 VPP -120 VS = ±6 V, VO = 2 VPP -100 -140 100k 1M 10M 0 100M 20 40 Frequency (Hz) 60 80 0 0 -20 -20 HD2 fC = 10 MHz -40 Distortion (dBc) Distortion (dBc) 100 Gain (V/V) HD2 -60 -80 fC = 10 MHz -40 -60 -80 fC = 1 MHz -100 HD3 fC = 1 MHz -100 HD3 -120 -120 0 0.5 1 1.5 2 2.5 VOUT (V) 3 3.5 4 0 2 4 6 VOUT (VPP) 8 10 12 200 mV/DIV 200 mV/DIV 10 ns/DIV 50 mV/DIV 100 mV/DIV 10 ns/DIV 10 ns/DIV 10 ns/DIV 0 0 +PSRR, AV +10 -10 -20 -20 +PSRR, AV +20 -50 -PSRR, AV +20 -70 PSRR (dB) PSRR (dB) -40 -60 +PSRR, AV = +10 -40 -30 -60 +PSRR, AV = +20 -80 -PSRR, AV = +10 -100 -80 -120 -90 -100 1k -PSRR, AV = +20 -PSRR, AV +10 10k 100k 1M 10M Frequency (Hz) 100M 1G -140 1k 10k 100k 1M 10M Frequency (Hz) 100M 1G 0 -10 -20 -20 -30 -30 CMRR (dB) CMRR (dB) 0 -10 -40 AV = +10 -50 -60 -40 -50 AV = +10 -60 -70 -70 AV = +20 -80 AV = +20 -80 -90 -90 1k 1M 100k 10k 10M 100M 1k 100k 10k Frequency (Hz) 5 Normalized Gain (dB) 3 2 100M RF = 2 k: 4 RF = 1.5 k: 3 RF = 1 k: RF = 750 : 1 0 -1 10M 5 RF = 2 k: RF = 1.5 k: Normalized Gain (dB) 4 1M Frequency (Hz) RF = 511 : -2 RF = 1 k: 2 1 RF = 750 : 0 -1 RF = 511 : -2 -3 -3 -4 -4 -5 10M -5 100M Frequency (Hz) 1G 10M 100M Frequency (Hz) 1G VOLTAGE NOISE DENSITY (nV/ Hz) 100 et 10 eni en 1 in 0.1 10 100 1k RSEQ (:) 10k 100k 2 2 2 2 en + in (RSeq + (Rf||Rg) ) + 4KT (RSeq + (Rf||Rg)) NF = 10 LOG 4KT (RSeq + (Rf||Rg)) ROPT » en in VO #VIN KO KO = 1 + ; sRSC RF RG RB VO RS + VIN C R - 50: 50: RF RF = RB RG = RS||R RG C1 R1 R2 + C2 RF RG CF 1.1 pF 5 VDC D1 CD = 10 pF RF 1.2 k Ω ID 5 VDC – R2 2k 5 VDC LMH6624 + RL 500 Ω C1 0.1 µF VOUT = 3 VDC - 1200 × I D R1 3k OP AMP OPEN LOOP GAIN GAIN (dB) I-V GAIN (:) NOISE GAIN (NG) 1 + sRF (CIN + CF) 1 + sRFCF 1+ CIN CF 0 dB FREQUENCY CF = CIN 2S(GBWP)RF f - 3 dB # GBWP 2 S R F C IN fz # 1 2SRFCIN fP = 1 2SRFCF GBWP 16 Current Noise Density (pA/ Hz) 14 ini 12 10 8 it en/RF 6 in 4 2 0 100 1k 10k Rf (:) +5VDC D1 RF (Noiseless) CD = 10 pF ID ini Noiseless Op Amp CURRENT NOISE DENSITY (pA/ Hz) 16 14 ini 12 it 10 8 en/RF 6 4 2 in 0 100 1k FEEDBACK RESISTANCE, RF (:) 10k PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) LMH6624MA NRND SOIC D 8 95 TBD Call TI Call TI -40 to 125 LMH66 24MA LMH6624MA/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) SN Level-1-260C-UNLIM -40 to 125 LMH66 24MA LMH6624MAX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) SN Level-1-260C-UNLIM -40 to 125 LMH66 24MA LMH6624MF NRND SOT-23 DBV 5 1000 TBD Call TI Call TI -40 to 125 A94A LMH6624MF/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS & no Sb/Br) SN Level-1-260C-UNLIM -40 to 125 A94A LMH6624MFX/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS & no Sb/Br) SN Level-1-260C-UNLIM -40 to 125 A94A LMH6626MA/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) SN Level-1-260C-UNLIM -40 to 125 LMH66 26MA LMH6626MAX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) SN Level-1-260C-UNLIM -40 to 125 LMH66 26MA LMH6626MM/NOPB ACTIVE VSSOP DGK 8 1000 Green (RoHS & no Sb/Br) SN Level-1-260C-UNLIM -40 to 125 A98A (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of