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HS1M R3G

HS1M R3G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    DO214AC

  • 描述:

    DIODE GEN PURP 1KV 1A DO214AC

  • 数据手册
  • 价格&库存
HS1M R3G 数据手册
HS1A – HS1M Taiwan Semiconductor 1A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Fast switching for high efficiency Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● ● DC to DC converter Switching mode converters and inverters Lighting application Snubber Freewheeling application PARAMETER VALUE UNIT IF 1 A VRRM 50 - 1000 V IFSM 30 A TJ MAX 150 °C Package DO-214AC (SMA) Configuration Single die MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AC (SMA) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.060g (approximately) DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Junction temperature Storage temperature SYMBOL HS1A HS1B HS1D HS1F HS1G HS1J HS1K HS1M UNIT HS1A HS1B HS1D HS1F HS1G HS1J HS1K HS1M VRRM 50 100 200 300 400 600 800 1000 V VR(RMS) 35 70 140 210 280 420 560 700 V IF 1 A IFSM 30 A TJ - 55 to +150 °C TSTG - 55 to +150 °C 1 Version: L2102 HS1A – HS1M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJA 70 °C/W Junction-to-ambient thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS HS1A HS1B HS1D HS1F HS1G HS1J HS1K HS1M (1) IF = 1A, TJ = 25°C SYMBOL VF TJ = 25°C Reverse current @ rated VR (2) TJ = 100°C IR TJ = 125°C Junction capacitance Reverse recovery time HS1A HS1B HS1D HS1F HS1G HS1J HS1K HS1M HS1A HS1B HS1D HS1F HS1G HS1J HS1K HS1M 1MHz, VR = 4.0V IF = 0.5A, IR = 1.0A, Irr = 0.25A TYP MAX UNIT - 1.0 V - 1.3 V - 1.7 V - 5 µA - 50 µA - 150 µA 20 - pF 15 - pF - 50 ns - 75 ns CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING HS1x DO-214AC (SMA) 7,500 / Tape & Reel Notes: 1. “x” defines voltage from 50V(HS1A) to 1000V(HS1M) 2 Version: L2102 HS1A – HS1M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 50 40 CAPACITANCE (pF) 1 30 HS1A - HS1G 20 HS1J - HS1M 10 f=1.0MHz Vsig=50mVp-p 0 0 25 50 75 100 125 0.1 150 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) 100 TJ=125°C 10 TJ=25°C 1 30 40 50 60 70 80 90 100 10 10 UF1DLW HS1A - HS1D 1 TJ=125°C TJ=25°C HS1G 1 0.1 HS1J - HS1M 0.01 0.1 0.001 0.6 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width 300μs 1% duty cycle Pulse width 0.8 0.4 0.5 1.0 0.6 1.2 0.7 0.8 1.4 0.9 1.6 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 40 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.4 Typical Forward Characteristics 1000 20 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 10 (A) AVERAGE FORWARD CURRENT (A) 2 8.3ms single half sine wave 30 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: L2102 1.2 HS1A – HS1M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: L2102 HS1A – HS1M Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AC (SMA) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: L2102 HS1A – HS1M Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: L2102
HS1M R3G 价格&库存

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