2N5551U
NPN Silicon Epitaxial Planar Transistors
for general purpose, high voltage amplifier
applications.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
180
V
Collector Emitter Voltage
VCEO
160
V
Emitter Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
Power Dissipation
Ptot
500
mW
Tj
150
O
Tstg
- 55 to + 150
O
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
C
C
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 5 V, IC = 1 mA
at VCE = 5 V, IC = 10 mA
at VCE = 5 V, IC = 50 mA
hFE
hFE
hFE
80
80
30
250
-
-
Collector Base Cutoff Current
at VCB = 120 V
ICBO
-
50
nA
IEBO
-
50
nA
V(BR)CBO
180
-
V
V(BR)CEO
160
-
V
V(BR)EBO
6
-
V
VCE(sat)
-
0.15
0.2
V
VBE(sat)
-
1
1
V
fT
100
300
MHz
Cob
-
6
pF
Emitter Base Cutoff Current
at VEB = 4 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Gain Bandwidth Product
at VCE = 10 V, IC = 10 mA, f = 100 MHz
Collector Output Capacitance
at VCB = 10 V, f = 1 MHz
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7/26/2012
2N5551U
Power
Dissipation: Ptot (mW)
Fig.1
Ptot - Ta
600
500
400
300
200
100
0
0
25
100
150
Ambient Temperature: Ta ( C)
O
Page 2 of 3
7/26/2012
2N5551U
SOT-89 PACKAGE OUTLINE
Page 3 of 3
7/26/2012
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