13001
General Purpose Transistors NPN Silicon
Product Summary
● VCEO
● Ic
● PC
400V
0.2A
750mW
SOT-23
■ MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
600
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
7
V
Collector Current -Continuous
IC
0.2
A
Power Dissipation
PC
0.75
W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
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1
13001
■ Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter
Symbol
Testconditons
Min
Collecto- base breakdown voltage
VCBO
Ic=0.1mA, IE=0
600
Collector- emitter breakdown voltage
VCEO
Ic=1mA, IB=0
400
Emitter - base breakdown voltage
VEBO
IE=0.1mA, IC=0
Typ
Max
V
7
Base-emitter voltage
VBE
IE=100mA
1.1
Collector cut-off current
ICBO
VCB=600V , IE=0
100
Collector cut-off current
ICEO
VCE=400V , IB=0
100
Emitter cut-off current
IEBO
VEB=7V , IC=0
100
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB=20mA
0.5
Base - emitter saturation voltage
VBE(sat)
IC=100mA, IB=20mA
1.2
hFE(1)
VCE=20V, IC=20mA
hFE(2)
VCE=10V, IC=0.25mA
DC current gain
Storage time
ts
Fall time
tf
Transition frequency
fT
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10
2
μA
V
70
5
1.5
IC=50mA, IB1=-IB2=5mA,
VCC=45V
VCE= 20V, IC=20mA,f=1MHz
Unit
0.3
8
μs
MHz
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Capacitance,COB (pF)
Saturation Voltage,VBE(SAT),VCE(SAT)
DC Current Gain,hFE
Collecter Current,IC (mA)
13001
■ Typical Performance Characteristics
3
13001
■ SOT-23 Package information
■ SOT-23 Suggested Pad Layout
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4
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