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BF1018

BF1018

  • 厂商:

    BFSEMICONDUCTOR(毕方半导体)

  • 封装:

    LSOP4_300MIL

  • 描述:

    单向光耦 Viso=5000Vrms VF(typ)=1.24V IF=60mA Vo=80V CTR=130~260% LSOP4_300MIL

  • 数据手册
  • 价格&库存
BF1018 数据手册
BF BF101X Series www.bfsemi.com LSOP4, DC Input, Photo Transistor ransistor Coupler SCHEMATIC Description The BF101X series combine an AlGaAs infrared inf emitting diode as the emitter which is optically coupled to a silicon planar phototransistor 1 4 2 3 detector in a plastic LSOP4 package. With the robust coplanar double mold structure, BF101X series provide the most stable isolation feature. Features  High isolation 5000 VRMS  CTR flexibility available see order information  DC input with transistor output  Operating temperature range - 55 °C to PIN DEFINITION 1. Anode 2. Cathode 3. Emitter 4. Collector PACKAGE OUTLINE 110 °C  RoHS & REACH Compliance  MSL class 1  Regulatory Approvals  UL - UL1577  VDE - EN60747-5-5(VDE0884 5(VDE0884-5)  CQC – GB4943.1, GB8898 Applications • Switch mode power supplies • Programmable controllers • Household appliances • Office equipment Document No: DWI002 Rev: A03 Release Date: 2020/1/20 /1/20 1 1 BF101X Series www.bfsemi.com LSOP4, DC Input, Photo Transistor Coupler ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT NOTE INPUT Forward Current IF 60 mA Peak Forward Current IFP 1 A Reverse Voltage VR 6 V Input Power Dissipation PI 100 mW Collector - Emitter Voltage VCEO 80 V Emitter - Collector Voltage VECO 7 V Collector Current IC 50 mA Output Power Dissipation PO 150 mW Total Power Dissipation Ptot 250 mW Isolation Voltage Viso 5000 Vrms Operating Temperature Topr -55~110 °C Storage Temperature Tstg -55~125 °C Soldering Temperature Tsol 260 °C 1 OUTPUT COMMON 2 Note 1.100μs pulse, 100Hz frequency Note 2. AC For 1 Minute, R.H. = 40 ~ 60% Document No: DWI002 Rev: A03 Release Date: 2020/1/20 2 2 BF101X Series www.bfsemi.com LSOP4, DC Input, Photo Transistor Coupler ELECTRICAL OPTICAL CHARACTERISTICS at Ta=25°C PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION NOTE INPUT Forward Voltage VF - 1.24 1.4 V IF=10mA Reverse Current IR - - 10 µA VR=6V Input Capacitance Cin - 30 250 pF V=0, f=1kHz OUTPUT Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage ICEO - - 100 nA VCE=20V, IF=0 BVCEO 80 - - V IC=0.1mA, IF=0 BVECO 7 - - V IE=0.1mA, IF=0 TRANSFER CHARACTERISTICS Current Transfer Ratio BF1010 300 - 600 BF1015 50 - 150 BF1016 100 - 300 BF1017 80 - 160 BF1018 130 - 260 BF1019 200 - 400 60 - 300 BF1012 63 - 125 BF1013 100 - 200 BF1014 160 - 320 BF1012 22 - - BF1013 34 - - BF1014 56 - - - 0.1 0.3 V IF=10mA, IC=1mA - Ω DC500V, 40 ~ 60% R.H. BF1011 CTR IF=5mA, VCE=5V % IF=10mA, VCE=5V IF=1mA, VCE=5V Collector-Emitter Saturation Voltage VCE(sat) Isolation Resistance RISO Floating Capacitance CIO - 0.4 1 pF V=0, f=1MHz Cut-off Frequency Fc - 80 - kHz VCE=2V, IC=2mA RL=100Ω,-3dB Response Time (Rise) Tr - 5 18 µs Response Time (Fall) Tf - 6 18 µs 10^12 10^14 VCE=2V, IC=2mA RL=100Ω 3 4 4 Note 3. Fig.12&13 Note 4. Fig.14 Document No: DWI002 Rev: A03 Release Date: 2020/1/20 3 3 BF BF101X Series www.bfsemi.com LSOP4, DC Input, Photo Transistor ransistor Coupler CHARACTERISTIC CURVES Fig.1 Forward Current vs. Ambient Temperature Fig.2 Collector Power Dissipation vs.Ambient Temperature Fig.3 Forward Current vs. Forward Voltage Fig.4 Collector Dark Current vs.Ambient Temperature Fig.5 Collector Current Fig.6 Collector Current vs. Collector-emitter emitter Voltage vs. Collector-emitter emitter Voltage Document No: DWI002 Rev: A03 Release Date: 2020/1/20 /1/20 4 4 BF BF101X Series www.bfsemi.com LSOP4, DC Input, Photo Transistor ransistor Coupler CHARACTERISTICCURVES Fig.7 Normalized Current Transfer Ratio vs. Forward Current Fig.8 Normalized Current Transfer Ratio vs.Ambient Temperature Fig.9 Collector-emitter emitter Saturation Voltage vs. Ambient Temperature Fig.10 Switching Time vs.Load Resistance Fig.11 Frequency Response Document No: DWI002 Rev: A03 Release Date: 2020/1/20 /1/20 5 5 BF BF101X Series www.bfsemi.com LSOP4, DC Input, Photo Transistor ransistor Coupler TEST CIRCUITS Fig.12 Test Circuits of Response Time Fig.13Curves s of Response Time Fig.14Test Circuits of Frequency Response Document No: DWI002 Rev: A03 Release Date: 2020/1/20 /1/20 6 6 BF BF101X Series www.bfsemi.com LSOP4, DC Input, Photo Transistor ransistor Coupler PACKAGE DIMENSIONS (Dimensions in mm unless otherwise stated) RECOMMENDED ECOMMENDED SOLDER MASK (Dimensions in mm unless otherwise stated) Document No: DWI002 Rev: A03 Release Date: 2020/1/20 /1/20 7 7 BF BF101X Series www.bfsemi.com LSOP4, DC Input, Photo Transistor ransistor Coupler CARRIER ARRIER TAPE SPECIFICATIONS (Dimensions in mm unless otherwise stated) Option T1 Option T2 Document No: DWI002 Rev: A03 Release Date: 2020/1/20 /1/20 8 8 BF BF101X Series www.bfsemi.com LSOP4, DC Input, Photo Transistor ransistor Coupler REEL SPECIFICATIONS (Dimensions in mm unless otherwise stated) Option T1 & T2 Document No: DWI002 Rev: A03 Release Date: 2020/1/20 /1/20 9 9 BF101X Series www.bfsemi.com LSOP4, DC Input, Photo Transistor Coupler BOX SPECIFICATIONS (Reel Type) Inner Box  L x W x H = 36cm x 36cm x 6.9cm Outer Box  L x W x H = 45cm x 38cm x 38cm Document No: DWI002 Rev: A03 Release Date: 2020/1/20 10 10 BF101X Series www.bfsemi.com LSOP4, DC Input, Photo Transistor Coupler ORDERING AND MARKING INFORMATION MARKING INFORMATION BF 101X VYAWW BF 101X V : Company Abbr. : Part Number& Rank : VDE Option Y A WW : Fiscal Year : Manufacturing Code : Work Week ORDERING INFORMATION LABEL INFORMATION BF101X(Z)-GV BF – Company Abbr. 101X – Rank (0/1/2/3/4/5/6/7/8/9) T – Tape and Reel Option (T1/T2) G – Green V – VDE Option (V or None) PACKING QUANTITY Option Quantity Quantity – Inner box Quantity – Outer box T1 3000 Units/Reel 3 Reels/Inner box 5 Inner box/Outer box = 45k Units T2 3000 Units/Reel 3 Reels/Inner box 5 Inner box/Outer box = 45k Units Document No: DWI002 Rev: A03 Release Date: 2020/1/20 11 11 BF101X Series www.bfsemi.com LSOP4, DC Input, Photo Transistor Coupler TEMPERATURE PROFILE OF SOLDERING IR REFLOW SOLDERING (J-STD-020D COMPLIANT) Profile Feature Sn-Pb Assembly Profile Pb-Free Assembly Profile Temperature Min. (Tsmin) 100 150°C Temperature Max. (Tsmax) 150 200°C Time (ts) from (Tsmin to Tsmax) 60-120 seconds 60-120 seconds Ramp-up Rate (tL to tP) 3°C/second max. 3°C/second max. Liquidous Temperature (TL) 183°C 217°C Time (tL) Maintained Above (TL) 60 – 150 seconds 60 – 150 seconds Peak Body Package Temperature 235°C +0°C / -5°C 260°C +0°C / -5°C Time (tP) within 5°C of 260°C 20 seconds 30 seconds Ramp-down Rate (TP to TL) 6°C/second max 6°C/second max Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Document No: DWI002 Rev: A03 Release Date: 2020/1/20 12 12 BF BF101X Series www.bfsemi.com LSOP4, DC Input, Photo Transistor ransistor Coupler TEMPERATURE PROFILE OF SOLDERING WAVE SOLDERING (JESD22-A111 (JESD22 COMPLIANT) HAND SOLDERING BY SOLDERING IRON Soldering Temperature 380+0/-5°C Soldering Time 3 sec max. Note 5. One time soldering is recommended for all soldering method. Note 6. Do not solder more than three times for IR reflow soldering. Document No: DWI002 Rev: A03 Release Date: 2020/1/20 /1/20 13 13 BF101X Series www.bfsemi.com LSOP4, DC Input, Photo Transistor Coupler DISCLAIMER  BF SEMICONDUCTOR is continually improving the quality, reliability, function and design. BF SEMICONDUCTOR reserves the right to make changes without further notices.  The characteristic curves shown in this datasheet are representing typical performances which are not guaranteed.  BF SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, BF SEMICONDUCTOR disclaims (a) any and allliability arising out of the application or use of any product, (b) any and all liability, including without limitation special, consequential or incidental damages, and (c) any and all implied warranties, including warranties of fitness for particular  The products shown in this publication are designed for the general use in electronic applications such as office automation, equipment, communications devices, audio/visual equipment, electrical application and instrumentation purpose, non-infringement and merchantability.  This product is not intended to be used for military, aircraft, automotive, medical, life sustaining or lifesaving applications or any other application which can result in human injury or death.  Please contact BF SEMICONDUCTOR sales agent for special application request.  Immerge unit’s body in solder paste is not recommended.  Parameters provided in datasheets may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated in each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify BF SEMICONDUCTOR’s terms and conditions of purchase, including but not limited to the warranty expressed therein.  Discoloration might be occurred on the package surface after soldering, reflow or long-time use. It neither impacts the performance nor reliability. Document No: DWI002 Rev: A03 Release Date: 2020/1/20 14 14
BF1018 价格&库存

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BF1018
  •  国内价格
  • 1+0.35100
  • 10+0.33800
  • 100+0.30680
  • 500+0.29120

库存:0