AP2302BI

AP2302BI 20V N-Channel Enhancement Mode MOSFET Description The AP2302BI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =2.3A RDS(ON) < 56mΩ@ VGS=4.5V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP2302BI SOT-23 A2SHB. 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Limit Unit VDS Drain-source Voltage 20 V VGS Gate-source Voltage ±12 V ID@ TA=25℃ Continuous Drain Current VGS @ 4.5V 2.3 A ID@ TA=70℃ Continuous Drain Current VGS @ 4.5V 1.8 A IDM Pulsed Drain Current A 14 A PD Total Power Dissipation @ TA=25℃ 0.7 W RθJA Thermal Resistance Junction-to-Ambient@Steady State 178 ℃/ W TJ ,TSTG Junction and Storage Temperature Range -55～+150 ℃ 1 AP2302BI RVE:3.9 永源微電子科技有限公司 AP2302BI 20V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min Typ BVDSS Drain-Source Breakdown Voltage VGS= 0V, ID=250μA 20 21 IDSS Zero Gate Voltage Drain Current VDS=20V,VGS=0V,TC=25℃ 1 μA IGSS Gate-Body Leakage Current VGS= ±12V, VDS=0V ±100 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA 0.66 0.9 V RDS(ON) Static Drain-Source OnResistance VGS= 4.5V, ID=2.0A 43 56 VGS= 2.5V, ID=1.5A 58 78 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 29 Qg Total Gate Charge 2.9 Qgs Gate Source Charge Qgd Gate Drain Charge 0.6 tD(on) Turn-on Delay Time 13 tr Turn-on Rise Time tD(off) Turn-off Delay Time tf Turn-off Fall Time IS Maximum Body-Diode Continuous Current VSD Diode Forward Voltage 0.52 Max Units V mΩ 280 VDS=10V,VGS=0V,f=1MHZ VGS=4.5V,VDS=10V,ID=3.0A VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω 46 pF nC 0.4 54 ns 18 11 IS=3.0A,VGS=0V 3.0 A 1.2 V Note： 1、Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. 2、Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. 2 AP2302BI RVE:3.9 永源微電子科技有限公司 AP2302BI 20V N-Channel Enhancement Mode MOSFET Figure1. Output Characteristics Figure3. Capacitance Characteristics Figure5. Drain-Source on Resistance Figure2. Transfer Characteristics Figure4. Gate Charge Figure6. Drain-Source on Resistance 3 AP2302BI RVE:3.9 永源微電子科技有限公司 AP2302BI 20V N-Channel Enhancement Mode MOSFET Figure7. Safe Operation Area Figure8. Switching wave 4 AP2302BI RVE:3.9 永源微電子科技有限公司 AP2302BI 20V N-Channel Enhancement Mode MOSFET Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use. 5 AP2302BI RVE:3.9 永源微電子科技有限公司 AP2302BI 20V N-Channel Enhancement Mode MOSFET Edition Date Change Rve3.8 2018/1/31 Initial release Rve3.9 2019/12/01 Reduce RDS(on) Copyright Attribution“APM-Microelectronice” 6 AP2302BI RVE:3.9 永源微電子科技有限公司