HSM0228

HSM0228 Dual N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSM0228 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSM0228 meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology VDS 100 V RDS(ON),max 68 mΩ ID 4 A SOP8 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 4 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 3 A IDM Pulsed Drain Current2 25 A PD@TA=25℃ Total Power Dissipation3 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient 1 RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 Typ. Max. Unit --- 90 ℃/W --- 40 ℃/W 1 HSM0228 Dual N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.122 --- V/℃ VGS=10V , ID=4A --- --- 68 m VGS=0V , ID=250uA VGS=4.5V , ID=3A --- --- 94 m 1.2 --- 2.5 V --- -4.84 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 10 VDS=80V , VGS=0V , TJ=55℃ --- --- 100 VGS=VDS , ID =250uA uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=4A --- 14 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.1 ---  Qg Total Gate Charge (10V) --- 12 --- --- 2.7 --- VDS=50V , VGS=10V , ID=4A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 1.7 --- Turn-On Delay Time --- 3.8 --- Td(on) nC Rise Time VDD=50V , VGS=10V , RG=3 --- 26 --- Turn-Off Delay Time ID=4A --- 16 --- Fall Time --- 8.8 --- Ciss Input Capacitance --- 620 --- Coss Output Capacitance --- 105 --- Crss Reverse Transfer Capacitance --- 63 --- Min. Typ. Max. Unit --- --- 2.5 A --- --- 25 A --- --- 1.2 V Tr Td(off) Tf VDS=25V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current1,4 ISM Pulsed Source Current2,4 VSD Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSM0228 Dual N-Ch 100V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics diode Fig.5 Normalized VGS(th) www.hs-semi.cn Fig.6 Normalized RDSON vs. TJ vs. TJ Ver 2.0 3 HSM0228 Dual N-Ch 100V Fast Switching MOSFETs 10000 Capacitance (pF) F=1.0MHz Ciss 1000 100 Coss Crss 10 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.0 4 HSM0228 Dual N-Ch 100V Fast Switching MOSFETs Ordering Information Part Number HSM0228 www.hs-semi.cn Package code SOP-8 Ver 2.0 Packaging 2500/Tape&Reel 5