S3MBF

S3ABF THRU S3MBF Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Ampere SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER Features SMBF  For surface mounted applications  Low profile package 0.146(3.70) 0.138(3.50) 0.086 (2.20) 0.075 (1.90)  Glass Passivated Chip Junction  Easy to pick and place  Lead free in comply with EU RoHS 2011/65/EU diretives 0.173(4.40) 0.165(4.20) 0.051(1.30) 0.043(1.10) Mechanical Data 0.010(0.26) 0.007(0.18) 0.048(1.20) 0.031(0.80) 0.216(5.50) 0.200(5.10) Case: JEDEC 60B) molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026 Polarity: Polarity symbol marking on body Mounting Position: Any Weight : 0.002 ounce, 0.057 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter S3ABF S3BBF S3DBF S3GBF S3JBF S3KBF S3MBF MDD S3ABF MDD S3BBF MDD MDD S3DBF S3GBF MDD S3JBF MDD MDD S3KBF S3MBF 50 35 50 100 70 100 SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=65℃ Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current at rated DC blocking voltage TA=25℃ TA=125℃ Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) VRRM VRMS VDC 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 UNITS V V V I(AV) 3.0 A IFSM 100 A VF 1.10 5.0 200.0 V IR CJ RJA Operating junction and storage temperature range TJ,TSTG μA 45.0 pF 40.0 ℃/W -55 to +150 ℃ Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas DN:T20518A0 http://www.microdiode.com Rev:2020A0 Page :1 S3ABF THRU S3MBF Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Ampere Typical Characterisitics Fig.2 Typical Reverse Characteristics 3.0 2.0 1.0 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Average Forward Current (A) Fig.1 Forward Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 Case Temperature (°C) 40 60 80 100 120 140 percent of Rated Peak Reverse Voltage (%) Fig.4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic 10 Junction Capacitance (pF) Instaneous Forward Current (A) 20 1.0 T J =25°C 100 10 T J =25°C 0.1 0.4 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surge Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surge Current 120 100 80 60 40 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2020A0 Page :2 S3ABF THRU S3MBF Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Ampere Packing information unit:mm P0 P1 d Item Symbol Tolerance SMBF Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width A B C d D D1 D2 E F P P0 P1 T W Reel width W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.81 5.61 1.60 1 50 . 330.00 50.00 13.00 1.75 5.50 4.00 4.00 2.00 0.30 12.00 12.30 E F B A W P D2 T D1 C W1 D Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (mm) BOX (pcs) INNER BOX (mm) REEL DIA, (mm) SMBF 13" 5,000 4.0 10,000 190*190*41 330 CARTON SIZE (mm) 365*365*360 CARTON (pcs) 80,000 APPROX. GROSS WEIGHT (kg) 14.0 Suggested Pad Layout Symbol Unit (mm) A 2.54 0.100 B 1.8 0.071 C 4.8 0.189 D 3.0 0.118 E 6.6 0.260 Unit (inch) Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). http://www.microdiode.com Rev:2020A0 Page :3