UDD32C03L01

DATA SHEET ELECTROSTATIC DISCHARGE PROTECTION DEVICES INDUSTRIAL / CONSUMER UDD32CXXL01 series Product specification– March 28, 2021 V.2 RoHS compliant & Halogen free Circuit Protection Electrostatic Discharge Protection Devices Product Specification UDD32CXXL01 Electrostatic Discharged Protection Devices (ESD) Data Sheet Description The series are an ultra low capacitance TVS array designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data an trans-mission lines from overvoltage caused by electrostatic discharge (ESD), cable discharge events (CDE) and lightning. The unique design incorporates surge rated, low capacitance steering diodes and a TVS diode in a single package. During transient conditions, the steering diodes direct the transient current to ground. The internal TVS diode clamps the transient voltage to a safe level. The ultra low capacitance array configuration allows the user to protect up to the high speed data lines. These devices are in a signal package, RoHS/WEEE compliant, SOD-323 package. It measures 2.5×1.25×1.0mm. The series devices may be used to meet the immunity requirements of IEC61000-4-2 (ESD), IEC61000-4-4 (EFT) and IEC61000-4-5 (Surge). Features ● IEC61000-4-2 ESD 30KV Air, 30KV contact compliance ● ● ● ● ● ● ● ● ● ● ESD 15KV Air, 8KV contact compliance for UDD32C36L01 SOD-323 surface mount package Protects one I/O line Working voltage: 3V, 5V, 8V, 12V ,15V, 24V, 36V Low leakage current Low operating and clamping voltages Solid-state silicon avalanche technology Lead Free/RoHS compliant Solder reflow temperature: Pure Tin-Sn, 260~270℃ Flammability rating UL 94V-0 Meets MSL level 1, per J-STD-020 Pin Configuration Applications ● ● ● ● ● USB 2.0 and USB 3.0 interface 10/100/1000 Ethernet Personal digital assistants (PDA) Serial ATA protection Digital visual interface (DVI) ● ● ● ● Wireless system devices Handhelds and notebooks Digital cameras RF interface www.yageo.com Mar. 28, 2021 V.2 Circuit Protection Product Specification Electrostatic Discharge Protection Devices UDD32CXXL01 Maximum Ratings Rating Peak pulse power (tp=8/20μs waveform) Symbol Value Unit PPP 350 W ESD voltage (Contact discharge) ±30 VESD ESD voltage (Air discharge) Storage & operating temperature range kV ±30 TSTG ,TJ ℃ -55~+150 Electrical Characteristics (TJ=25℃) UDD32C03L01 (Marking: AC) Parameter Reverse stand-off voltage Reverse breakdown voltage Symbol Condition Min. Typ. VRWM Max. Unit 3.3 V VBR IBR=1mA 4 V Reverse leakage current IR VR=3.3V 5 μA Clamping voltage (tp=8/20μs) VC IPP=1A 7 V Clamping voltage (tp=8/20μs) VC IPP=5A 15 V Peak Pulse Current (tp=8/20μs) IPP 19 A Off state junction capacitance CJ 0Vdc,f=1MHz Symbol Condition 0.8 pF UDD32C05L01 (Marking: BC) Parameter Reverse stand-off voltage Reverse breakdown voltage Min. Typ. VRWM Max. Unit 5 V VBR IBR=1mA 6 V Reverse leakage current IR VR=5V 5 μA Clamping voltage (tp=8/20μs) VC IPP=1A 9.8 V Clamping voltage (tp=8/20μs) VC IPP=5A 18.3 V Peak Pulse Current (tp=8/20μs) IPP 17 A Off state junction capacitance CJ 0Vdc,f=1MHz Symbol Condition 0.8 pF UDD32C08L01(Marking: BC.) Parameter Reverse stand-off voltage Reverse breakdown voltage Min. Typ. VRWM Max. Unit 8 V VBR IBR=1mA Reverse leakage current IR VR=8V 1 μA Clamping voltage (tp=8/20μs) VC IPP=1A 13 V Clamping voltage (tp=8/20μs) VC IPP=10A 24 V Peak Pulse Current (tp=8/20μs) IPP 17 A Off state junction capacitance CJ 0Vdc,f=1MHz 8.5 V 1 pF www.yageo.com Mar. 28, 2021 V.2 Circuit Protection Product Specification Electrostatic Discharge Protection Devices UDD32CXXL01 UDD32C12L01 (Marking: DC) Parameter Reverse stand-off voltage Reverse breakdown voltage Symbol Condition Min. Typ. VRWM Max. Unit 12 V VBR IBR=1mA 13.3 V Reverse leakage current IR VR=12V 1 μA Clamping voltage (tp=8/20μs) VC IPP=1A 19 V Clamping voltage (tp=8/20μs) VC IPP=5A 28.6 V Peak Pulse Current (tp=8/20μs) IPP 7 A Off state junction capacitance CJ 0Vdc,f=1MHz Symbol Condition 0.8 pF UDD32C15L01 (Marking: EC) Parameter Reverse stand-off voltage Reverse breakdown voltage Min. Typ. VRWM Max. Unit 15 V VBR IBR=1mA 16.7 V Reverse leakage current IR VR=15V 1 μA Clamping voltage (tp=8/20μs) VC IPP=1A 24 V Clamping voltage (tp=8/20μs) VC IPP=5A 35 V Peak Pulse Current (tp=8/20μs) IPP 6 A Off state junction capacitance CJ 0Vdc,f=1MHz Symbol Condition 0.8 pF UDD32C24L01 (Marking: HC) Parameter Reverse stand-off voltage Reverse breakdown voltage Min. Typ. VRWM Max. Unit 24 V VBR IBR=1mA Reverse leakage current IR VR=24V 1 μA Clamping voltage (tp=8/20μs) VC IPP=1A 43 V Clamping voltage (tp=8/20μs) VC IPP=5A 56 V Peak Pulse Current (tp=8/20μs) IPP 6 A Off state junction capacitance CJ 0Vdc,f=1MHz 26.7 V 0.8 pF www.yageo.com Mar. 28, 2021 V.2 Circuit Protection Product Specification Electrostatic Discharge Protection Devices UDD32CXXL01 UDD32C36L01 (Marking: KC) Parameter Symbol Reverse stand-off voltage Condition Min. Typ. VRWM Reverse breakdown voltage Max. Unit 36 V VBR IBR=1mA 40 V Reverse leakage current IR VR=36V 1 μA Clamping voltage (tp=8/20μs) VC IPP=1A 70 V Clamping voltage (tp=8/20μs) VC IPP=2A 75 V Peak Pulse Current (tp=8/20μs) IPP 3 A Off state junction capacitance CJ 0Vdc,f=1MHz 0.8 pF Typical Characteristics Curves Figure 1. Power Derating Curve Figure 2. Pulse Waveform 110 100 90 % of Peak Power Current Peak Power Dissipation (%) 100 80 70 60 50 40 30 20 10 0 tr Peak value Ipp Waveform Parameters: tr=8µs td=20µs 90 80 70 60 50 40 td=t|PP/2 30 20 10 0 25 50 75 100 125 150 175 200 0 0 5 10 15 20 25 30 t-Time (μs) TA-Ambient Temperature (℃) Figure 3. Non-Repetitive Peak Pulse vs Pulse Time Figure 4. ESD Clamping (8kV Contact IEC61000-4-2) PPP-Peak Pusle Power (W) 10000 1000 100 10 0.1 1 10 100 1000 10000 tp-Pulse Duration (μs) www.yageo.com Mar. 28, 2021 V.2 Circuit Protection Product Specification Electrostatic Discharge Protection Devices UDD32CXXL01 Recommended Soldering Conditions Reflow Soldering Critical Zone TL to TP tP TP Ramp-up TL tL Temperature TS max TS min Ramp-down tS Preheat 25 t 25℃ to Peak Time Recommended Condition Profile Feature Pb-Free Assembly Average ramp-up rate (TL to TP) 3℃/second max. Preheat -Temperature Min (TS min) -Temperature Max (TS max) -Time (min to max) (ts) 150℃ 200℃ 60-180 seconds TS max to TL -Ramp-up Rate 3℃/second max. Time maintained above: -Temperature (TL) -Time (tL) 217℃ 60-150 seconds Peak Temperature (TP) 260℃ Time within 5℃ of actual Peak Temperature (tP) Ramp-down Rate Time 25℃ to Peak Temperature 20-40 seconds 6℃/second max. 8 minutes max. www.yageo.com Mar. 28, 2021 V.2 Circuit Protection Product Specification Electrostatic Discharge Protection Devices UDD32CXXL01 Dimensions (SOD-323) G E Dimension Symbol Millimeters X H 1 2 A F D B C detail X 0.50 (2X) 0.60 (2X) 2.3 Recommended Soldering Pad Layout Inches Min. Max. Min. Max. A 0.80 1.10 0.031 0.043 B 0.00 0.10 0.000 0.004 C 0.20 - 0.008 - D 0.11 0.20 0.004 0.008 E 1.15 1.35 0.045 0.053 F 0.25 0.35 0.010 0.014 G 1.60 1.80 0.063 0.071 H 2.40 2.70 0.094 0.102 Packaging Tape P0 P1 P2 K F B0 B W E øD0 A0 øD1 t A Reel D2 D W1 Symbol Dimension (mm) W 8.00±0.30 P0 4.00±0.10 P1 4.00±0.10 P2 2.00±0.10 D0 Φ1.55±0.10 D1 Φ1.00±0.05 E 1.75±0.10 F 3.50±0.10 A 1.48±0.10 A0 0.80±0.10 B 3.00±0.10 B0 1.80±0.10 K 1.05±0.10 t 0.25±0.05 D Φ178.0±2.0 D2 Φ13.0 W1 9.5 Quantity: 3000PCS www.yageo.com Mar. 28, 2021 V.2