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AS3400

AS3400

  • 厂商:

    ANBON(安邦)

  • 封装:

    SOT23

  • 描述:

    AS3400

  • 数据手册
  • 价格&库存
AS3400 数据手册
AS3400 N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 27mΩ@10V 30V 33mΩ@4.5V 5.6A 51mΩ@2.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Circuit diagram Package SOT-23 Marking 3400. Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150006 2003/03/08 2018/05/16 E 3 AS3400 N-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5.6 A Pulsed Drain Current IDM 23 A Power Dissipation PD 1.2 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =30V,VGS = 0V Gate-body leakage current IGSS VGS =±12V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage Drain-source on-resistance 1) RDS(on) 30 V 0.65 1 µA ±100 nA 1.5 V VGS =10V, ID =5.6A 27 VGS =4.5V, ID =5.0A 33 VGS =2.5V, ID =3.0A 51 mΩ 2) Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 36 Total Gate Charge Qg 4.8 Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.7 Turn-on delay time td(on) 12 Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time 535 VDS =15V,VGS =0V,f =1MHz 130 VDS =15V,VGS =4.5V,ID =5.6A pF 1.2 nC 52 VDD=15V, VGS =4.5V, ID =1A RGEN=2.8Ω nS 17 tf 10 Source-Drain Diode characteristics 1) Diode Forward Current IS Diode Forward voltage VDS VGS =0V, IS=5.6A 5.6 A 1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. Page 2 Document ID Issued Date Revised Date Revision Page. AS-3150006 2003/03/08 2018/05/16 E 3 AS3400 N-Channel Channel Enhancement Mode MOSFET SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 0.950 TYP. 1.800 L L1 2.000 0.071 0.550 REF. 0.300 0.100 0. 0.037 TYP. 0.079 0. 0.022 REF. 0.500 Page 3 0.012 0.020 Document ID Issued Date Revised Date Revision Page. AS-31500 006 2003/03/08 2018/05/16 E 3
AS3400 价格&库存

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AS3400
    •  国内价格
    • 1+0.36740

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    AS3400
      •  国内价格
      • 3000+0.14030

      库存:0