BAV99SM

BAV99SM Switching Diode SOT-523 Features  Fast Switching  Small Surface Mount Package Marking:JE Maximum Ratings ( Ta=25℃ unless otherwise noted ) Parameter Symbo Limit Unit Reverse voltage VR 85 5 V Forward current IO 75 5 mA Forward power dissipation PD 150 50 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~+150 ℃ Electrical Characteristics (Ta =25 ℃ unless otherwise specified) Parameter Reverse breakdown voltage Symbol Test conditions Min. Max. 85 Unit V(BR) IR= 1μA V IR1 VR=75V 2 μA IR2 VR=25V 0.03 μA Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA 715 855 1000 1250 mV Diode capacitance CD VR=0 1.5 pF Reverse recovery time t rr IF=IR=10mA Irr=0.1×IR,RL=100Ω 4 ns Reverse voltage leakage current www.pingjingsemi.com Revision 1.0 Sep-2019 f=1MHz 1/3 BAV99SM Switching Diode Electrical Characteristics Curves 3000 (nA) 100 30 T= a 2 5℃ 10 REVERSE CURRENT IR T= a 1 00 ℃ FORWARD CURRENT Characteristics 10000 IF (mA) Forward 300 3 1 0.3 Reverse Characteristics Ta=100℃ 1000 300 100 30 Ta=25℃ 10 3 0.1 0.0 1 0.4 0.8 1.2 FORWARD VOLTAGE VF 1.6 0 20 (V) 40 60 REVERSE VOLTAGE 80 VR 100 (V) Power Derating Curve Capacitance Characteristics 1.6 200 (mW) f=1MHz 150 PD 1.4 1.2 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 1.0 0.8 0.6 100 50 0 0 4 8 12 REVERSE VOLTAGE www.pingjingsemi.com Revision 1.0 Sep-2019 16 VR (V) 20 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta 150 (℃) 2/3 BAV99SM Switching Diode Package Outline SOT-523 unit：mm www.pingjingsemi.com Revision 1.0 Sep-2019 3/3