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BAV21W

BAV21W

  • 厂商:

    PJ(平晶)

  • 封装:

    SOD123

  • 描述:

    SOD123 250mA 500mW

  • 数据手册
  • 价格&库存
BAV21W 数据手册
BAV19W~BAV21W Silicon Epitaxial Planar Switching Diode SOD-123 Features  Fast switching speed  Glass passivated chip junction 2  Surface mount package ideally suited for automatic insertion 1 1.Cathode 2.Anode Marking Code: BAV19W:A8 BAV20W:T2 BAV21W:T3 Absolute Maximum Ratings at TA = 25 ℃ Parameter Maximum Repetitive Peak Reverse Voltage Symbol BAV19W BAV20W Maximum RMS Voltage VRRM 200 250 BAV19W 100 VRMS BAV21W Continuous Forward Current Repetitive Peak Forward Current 150 V V 200 IF 250 mA IFRM 625 mA at t =1 s at t =1 ms Unit 120 BAV21W BAV20W Non-repetitive Peak Forward Surge Current Value 1 IFSM at t =1 μs 3 A 9 Power Dissipation PD 500 mW Junction Temperature TJ 500 °C TSTG -55 to +150 °C Storage Temperature Range www.pingjingsemi.com Revision:2.0 Jun-2021 1/4 BAV19W~BAV21W Silicon Epitaxial Planar Switching Diode Characteristics at TA = 25 ℃ Parameter Symbol Reverse Breakdown Voltage BAV19W at IR = 100 µA BAV20W Min. Max. 120 -- 200 -- 250 -- -- 1 -- 1.25 -- 0.1 -- 100 Cj -- 5 pF Trr -- 50 nS V(BR)R BAV21W Unit V Maximum Forward Voltage at IF =100 mA VF at IF =200 mA V Maximum DC Reverse Current at Rated DC Blocking Voltage at TA =25 °C IR at TA =150 °C Typical Junction Capacitance at VR= 4 V, f= 1 MHz Maximum Reverse Recovery Time at IF= 0.5 A, Irr= 0.25A, IR= 1A www.pingjingsemi.com Revision:2.0 Jun-2021 μA 2/4 BAV19W~BAV21W Silicon Epitaxial Planar Switching Diode Instaneous Reverse Current (μA) Total Power Dissipation (mW) Typical Characteristic Curves 600 500 400 300 200 100 0.0 25 75 50 100 125 150 100 T J =150°C 10 1 0.1 T J =25°C 0.01 175 00 60 80 100 1.0 Junction Capacitance (pF) Instaneous Forward Current (A) 40 0.1 T J =25°C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Instaneous Forward Voltage (V) www.pingjingsemi.com Revision:2.0 Jun-2021 100 120 percent of Rated Peak Reverse Voltage (%) Ambient Temperature (°C) 0.01 0.0 20 1.6 T J =25°C 10 1 0.1 1.0 10 100 Reverse Voltage (V) 3/4 BAV19W~BAV21W Silicon Epitaxial Planar Switching Diode Package Outline SOD-123 Dimensions in mm A D b E A1 C ∠ALL ROUND L1 E1 A C D E E1 L1 b A1 max 1.3 0.22 1.8 2.8 3.9 0.45 0.7 0.2 min 0.9 0.09 1.5 2.5 3.6 0.25 0.5 max 51 8.7 71 110 154 18 28 min 35 3.5 59 98 142 10 20 UNIT mm mil www.pingjingsemi.com Revision:2.0 Jun-2021 8 ∠ 9° 4/4
BAV21W 价格&库存

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