JST8205S

JST8205S 20V,4.8A Dual N-Channel Mosfet FEATURES SOT-23-6L RDS(ON)≤ 21.5mΩ @VGS=4.5V RDS(ON)≤ 27.5mΩ @VGS=2.5V APPLICATIONS Load Switch for Portable Devices Battery Protection Power Management Dual N-CHANNEL MOSFET MARKING Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current ID 4.8 Pulsed Drain Current IDM 12 Maximum Power Dissipation PD 1.25 W ℃/W Thermal Resistance from Junction to Ambient(t ≤5s) RθJA 357 Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 Unit V A ℃ 1／5 JST8205S MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 20 21.6 Gate-source threshold voltage VGS(th) VDS =VGS, ID =250µA 0.5 0.72 Gate-source leakage IGSS VDS =0V, VGS =±12V ±100 nA Zero gate voltage drain current IDSS VDS =19V, VGS =0V 1 µA Drain-source on-state resistance a RDS(on) Static Body diode voltage VGS =4.5V, ID =4.8A VGS =2.5V, ID =4A IS=1.7A VSD 1.0 19.8 21.5 24 27.5 0.8 1.2 V mΩ V Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 140 Total gate charge Qg 11 Gate-source charge Qgs Gate-drain charge Qgd 2.5 Turn-on delay time td(on) 18 Rise time Turn-off delay time Fall time 600 VDS =8V,VGS =0V,f =1MHz tr td(off) VDS =10V,VGS =4.5V,ID =4A 330 2.3 VDD=10V,ID =1A, 5 VGS=4V,RGEN=10Ω 43 tf pF nC nS 20 Notes : a. Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b. Guaranteed by design, not subject to production testing. 2／5 JST8205S N-Channel 20V (D-S) MOSFET Typical Characteristics 3／5 JST8205S 4／5 JST8205S SOT-23-6L package 5／5