SL40T65FL

SL40T65FL 650V 40A IGBT Features       High Speed Switching & Low Power Loss VCE(sat) = 1.95V @ IC = 40A Eoff = 0.35mJ @ TC = 25°C High Input Impedance trr = 80ns (typ.) @diF/dt = 1000A/ μs Maximum junction temperature 175°C Applications  PFC  UPS  PV Inverter  Welder  IH Cooker TO-247 Maximum Rating Parameter Collector-emitter voltage DC collector current, limited by Tvjmax TC=25°C TC=100°C Pulsed collector current, tp limited by Tjvjmax Turn off safe operating area VCE ≤ 600V, Tvj ≤ 175°C TC=25°C Diode forward current limited by Tvjmax TC=100°C Diode pulsed current, tp limited by Tvjmax Gate-emitter voltage TC=25°C Power dissipation TC=100°C Short circuit withstand time VCC ≤ 400V, VGE = 15V, Tvj = 150°C Allowed number of short circuits < 1000 Time between short circuits ≥ 1.0s Operating Junction temperature range Storage temperature range Soldering temperature Wave soldering 1.6 mm (0.063 in.) from case for 10s Mounting torque, M3 screw Maximum of mounting processes: 3 Symbol Rating Unit VCE 650 80 40 160 160 40 20 160 ±20 375 188 V A A A A A V W W tsc 5 μs Tvj Tstg -40~175 -55~150 °C °C 260 °C M 0.6 Nm Unit IC ICpuls IF IFpuls VGE PD A Thermal Characteristic Symbol Rating Thermal resistance junction-to-ambient Parameter RθJA 40 Thermal resistance junction-to-case for IGBT RθJC 0.4 Thermal resistance junction-to-case for Diode RθJC 1.2 www.slkormicro.com 1 °C/W SL40T65FL Electrical Characteristic (Tvj = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit 650 - - V IC = 40A, VGE = 15V, Tvj = 25°C 1.95 2.4 IC = 40A, VGE = 15V, Tvj = 175°C 2.3 Static Characteristic Collector-emitter breakdown voltage BVCES Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF IC = 2mA, VGE = 0V VGE = 0V, IF = 20A Tvj = 25°C 1.3 Tvj = 125°C 1.15 Tvj = 175°C Gate-emitter threshold voltage VGE(th) VCE = VGE, IC = 0.58mA VCE = 650V, VGE = 0V Zero gate voltage collector current ICES Gate-emitter leakage current IGES VGE = 20V, VCE = 0V Transconductance gfs VCE = 20V, IC = 40A, V 1.9 V 1.1 4.0 5.0 6.0 Tvj = 25°C - - 40 Tvj = 175°C - - 1000 - ±100 - 17.0 V μA nA S Dynamic Characteristic Total gate charge Qg Gate-emitter charge Qge VCE = 520V, IC = 40A, VGE = 15V - 219 - 26 nC Gate-collector charge Qgc - 115 Input capacitance Cies - 2818 - VCE = 25V, VGE = 0V, f = 1MHz Reverse transfer capacitance Cres - 131 - Output capacitance Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current Max. 1000 short circuits Time between short circuits: ≥ 1.0s Coes - 209 - LE - 13.0 - nH - 180 - A td(on) - 58 - tr - 54 - td(off) - 245 - IC(SC) VGE = 15V, VCC = 400V, tSC ≤ 5μs, Tvj = 150°C pF Switching Characteristic Turn-on delay time Rise time Turn-off delay time Fall time tf VGE = 15V, VCC = 400V, IC = 40A, RG = 7.9Ω, Inductive Load, Tvj = 25°C - 40 - - 1.15 - Turn-on switching energy Eon Turn-off switching energy Eoff - 0.35 - Total switching energy Ets - 1.50 - ns mJ Reverse recovery time trr - 80 - ns Reverse recovery current Irr - 25 - A Reverse recovery charge Rate of fall of reverse recovery current during tb Qrr - 1.0 - μC - -950 - A/μs www.slkormicro.com IF = 20A, diF/dt = 1000A/ μs, Tvj = 25°C dirr/dt 2 SL40T65FL Switching Characteristic Turn-on delay time Rise time Turn-off delay time Fall time td(on) - tr td(off) tf VGE = 15V, VCC = 400V, IC = 40A, RG = 7.9Ω, Inductive Load, Tvj = 175°C 61 - - 60 - - 260 - - 38 - - 1.80 - ns Turn-on switching energy Eon Turn-off switching energy Eoff - 0.38 - Total switching energy Ets - 2.18 - Reverse recovery time trr - 145 - ns Reverse recovery current Irr - 44 - A Reverse recovery charge Rate of fall of reverse recovery current during tb Qrr - 3.2 - nC - -680 - A/μs www.slkormicro.com IF = 20A, diF/dt = 1000A/ μs, Tvj = 175°C dirr/dt 3 mJ SL40T65FL 120 160 21V TJ = 25C 17V 19V 21V 19V 17V 15V TJ = 175C 15V 140 Collector Current, I C [A] Collector Current, I C [A] 100 120 100 13.0V 80 60 11.0V 40 13.0V 80 60 11.0V 40 9.0V 20 9.0V 20 VGE = 7V VGE = 7V 0 0 0 1 2 3 4 5 0 1 Collector-Emitter Voltage VCE [V] 4 5 Fig.2 Typical Output Characteristics(TJ=175℃) 4.0 140 VCE = 20V TJ = 25'C TJ = 175'C VGE = 15V Collector-Emitter Voltage, V CE [V] 120 Collector Current, IC [A] 3 Collector-Emitter Voltage VCE [V] Fig.1 Typical Output Characteristics(T J=25℃) 100 80 60 40 20 0 5 6 7 8 9 10 11 12 13 14 3.0 2.5 40A 2.0 20A 1.5 1.0 25 15 80A 3.5 50 Gate-Emitter Voltage VGE [V] 125 150 175 1.5 TJ = 25'C TJ = 175'C 40A 1.4 Forward Voltage, V F [V] 120 100 80 60 40 1.3 1.2 20A 1.1 10A 1.0 0.9 20 0 0.0 100 Fig.4 Typical Collector-Emitter Saturation Voltage -Junction Temperature 160 140 75 Junction Temperature, T J [C] Fig.3 Typical Transfer Characteristics Forward Current, IF [A] 2 0.5 1.0 1.5 2.0 2.5 0.8 25 3.0 Fig.5 Diode Forward Characteristics www.slkormicro.com 50 75 100 125 150 175 Junction Temperature, T J [C] Forward Voltage, VF[V] Fig.6 Diode Forward-Junction Temperature 4 SL40T65FL 6000 6.0 Cies VGE = 0V f = 1MHz 5.0 Max. 4.5 C apacitance [pF ] Threshold Voltage, V GE (th) [V] 5.5 Typ. 4.0 Min. 3.5 3.0 4000 Coes 2000 2.5 Cres 2.0 1.5 25 50 75 100 125 150 0 175 0 5 10 Junction Temperature, TJ [C] 20 25 30 Collector-Emitter Voltage, V CE [V] Fig.7 Threshold Voltage-Junction Temperature Fig.8 Typical Capacitance 16 100 VCC = 130V VCC = 520V 14 VCC = 400V VGE = 15V RG = 7.9ohm TC = 175'C 12 td(on) 80 Switching Time [nS] Gate-Emitter Voltage, VGE, [V] 15 10 8 6 60 tr 40 4 2 20 0 0 50 100 150 200 10 250 20 30 40 50 60 70 80 Collector Current, IC [A] Total Gate Charge, QG [nC] Fig.9 Typical Gate Charge Fig.10 Typical Turn on-Collector Current 4 1000 VCC = 400V VGE = 15V RG = 7.9ohm TC = 175'C td(off) Eon Switching Loss [mJ] Switching Time [nS] 3 100 tf 10 VCC = 400V VGE = 15V RG = 7.9ohm TC = 175'C 1 10 20 30 40 50 60 70 Eoff 1 0 10 80 20 30 40 50 60 70 Collector Current, IC [A] Collector Current, IC [A] Fig.11 Typical Turn off-Collector Current www.slkormicro.com 2 Fig.12 Switching Loss-Collector Current 5 80 SL40T65FL 70 1000 VCC = 400V VGE = 15V IC = 40A TJ = 175'C Switching Time [nS] Switching Time [nS] V CC = 400V V GE = 15V IC = 40A TJ = 175'C 60 td(on) tr 50 100 tf 40 0 5 10 15 20 10 25 0 5 Gate Resistance, RG [ohm] 10 15 20 25 Gate Resistance, RG [ohm] Fig.14 Turn off Characteristics-Gate Resistance Fig.13 Turn on Characteristics-Gate Resistance 100 3.0 VCC = 400V VGE = 15V IC = 40A TJ = 175'C 2.5 VCC = 400V VGE = 15V IC = 40A RG = 7.9ohm 80 Ets 2.0 turn on [ns] Switching Loss [mJ] td(off) Eon 1.5 td(on) 60 tr 1.0 40 Eoff 0.5 0.0 0 5 10 15 20 20 25 25 50 75 100 125 150 175 Junction Temperature, TJ [C] Gate Resistance, RG [ohm] Fig.15 Switching Loss-Gate Resistance Fig.16 Turn on Characteristics -Junction Temperature 2.5 1000 VCC = 400V VGE = 15V IC = 40A R G = 7.9ohm 2.0 VCC = 400V VGE = 15V IC = 40A RG = 7.9ohm Ets Switching Loss [mJ] turn off [ns] td(off) 100 tf Eon 1.5 1.0 Eoff 0.5 10 25 50 75 100 125 150 175 Junction Temperature, TJ [C] 50 75 100 125 150 175 Junction Temperature, TJ [C] Fig.17 Turn off Characteristics Junction Temperature www.slkormicro.com 0.0 25 Fig.18 Switching Loss-Junction Temperature 6 SL40T65FL 2.0 Ets 1.0 Eon 0.5 Eoff TJ = 25'C TJ = 175'C IF = 20A 180 Reverse Recovery Time, trr [ns] Switching Loss [mJ] 1.5 200 VGE = 15V IC = 40A RG = 7.9ohm TJ = 175'C 160 140 120 100 80 0.0 200 250 300 350 400 60 500 450 700 800 900 Collector-Emitter Voltage, VCE [V] Diode Current Slope, diF/dt [A/us] Fig.19 Switching Loss-Collector Emitter Voltage Fig.20 Reverse Recovery Time -Diode current slope TJ = 25'C TJ = 175'C IF = 20A Reverse Recovery Current, Irr [A] 3.0 1000 50 3.5 Reverse Recovery Charge, Qrr [uC] 600 2.5 2.0 1.5 TJ = 25'C TJ = 175'C IF = 20A 40 30 20 1.0 0.5 500 600 700 800 900 10 500 1000 Diode Current Slope, diF/dt [A/us] 600 700 800 900 1000 Diode Current Slope, diF/dt [A/us] Fig.22 Reverse Recovery Current -Diode current slope Fig.21 Reverse Recovery Charge -Diode Current Slope 400 100 350 Collector Current,IC, [A] Rate of fall of Irr, dirr/dt [A/us] TJ = 25'C TJ = 175'C IF = 20A 300 250 tp=1us 10us 10 50us 100us 200us 500us 1 DC 200 800 0.1 900 1000 1 Diode Current Slope, diF/dt [A] Fig.23 Rate of fall of reverse recovery current -Diode Current Slope www.slkormicro.com 10 100 1000 Collector-Emitter Voltage,VCE [V] Fig.24 Forward Bias Safe Operating Area 7 SL40T65FL TC =25'C TC = 150'C Short Circuit Withstand Time, tSC [㎲ ] Short Circuit Collector current, IC(SC) [A] 300 250 200 150 100 12 14 16 TC = 25'C TC = 150'C 30 20 10 12 18 14 Gate-Emitter Voltage, VGE [V] 18 Fig.26 Typical Short Circuit Withstand Time 80 400 70 350 Power Dissipation, Ptot [A] Collector Current, IC [A] Fig.25 Typical Short Circuit Collector Current 60 50 40 30 20 10 300 250 200 150 100 50 0 25 0 50 75 100 125 150 175 25 50 Case Temperature, TC [C] 75 100 125 150 175 Case Temperature, TC [C] Fig.27 Case Temperature-Collector Current Fig.28 Power Dissipation-Case Temperature D=0.9 D=0.9 0 10 Thermal Response [Z? JC ] 0.5 Thermal Response [Z? JC ] 16 Gate-Emitter Voltage, VGE [V] -1 10 0.1 0.05 0.02 -2 10 0.01 0.5 0.1 -1 10 0.05 0.02 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z? JC* R? JC(t) + TC Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z? JC* R? JC(t) + TC 0.01 -2 -6 10 -5 1x10 -4 1x10 -3 10 -2 10 -1 10 10 0 10 Rectangular Pulse width [sec] -5 1x10 -4 1x10 -3 10 -2 10 -1 10 Fig.30 FRD Transient Thermal Impedance 8 0 10 Rectangular Pulse width [sec] Fig.29 IGBT Transient Thermal Impedance www.slkormicro.com -6 10 SL40T65FL E ΦP TO-247 A L1 D E2 D1 S Q A2 b2 L b1 b e E1 c Dimension Min(mm) Max(mm) A 4.70 5.31 A1 2.20 2.60 A2 1.50 2.49 b 0.99 1.40 b1 2.59 3.43 b2 1.65 2.39 c 0.38 0.89 D 20.30 21.46 D1 13.08 - E 15.45 16.26 E1 13.06 14.02 E2 4.32 5.49 e L 5.45BSC 19.81 20.57 L1 - 4.50 ΦP 3.50 3.70 Q 5.38 S www.slkormicro.com A1 6.20 6.15BSC 9