VS3518AE

VS3518AE -30V/-35A P-Channel Advanced Power MOSFET Features  P-Channel，-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching and High efficiency V DS -30 V R DS(on),TYP@ VGS=-10 V 15 mΩ R DS(on),TYP@ VGS=-4.5V 23 mΩ ID -35 A PDFN3333  Enhancement mode  Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel information VS3518AE PDFN3333 3518AE 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating Unit V(BR)DSS Drain-Source breakdown voltage -30 V VGS Gate-Source voltage ±25 V IS Diode continuous forward current TC =25°C -35 A TC =25°C -35 A ID Continuous drain current @VGS=-10V TC =100°C -22 A TC =25°C -140 A TA=25°C -12 A TA=70°C -10 A 49 mJ TC =25°C 30 W TC =100°C 12 W TA=25°C 3.5 W TA=70°C 2.3 W -55 to 150 °C Typical Unit IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=-10V EAS Avalanche energy, single pulsed ② PD Maximum power dissipation PDSM TSTG , TJ Maximum power dissipation ③ Storage and junction temperature range Thermal Characteristics Symbol Parameter R JC Thermal Resistance, Junction-to-Case 4.1 °C/W R JA Thermal Resistance, Junction-to-Ambient 35 °C/W Copyright Vanguard Semiconductor Co., Ltd Rev B – OCT, 2018 www.vgsemi.com VS3518AE -30V/-35A P-Channel Advanced Power MOSFET Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -30 -- -- V Zero Gate Voltage Drain Current VDS=-30V,VGS=0V -- -- -1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=-30V,VGS=0V -- -- -100 μA IGSS Gate-Body Leakage Current VGS=±25V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=-250μA -1.2 -1.6 -2.3 V RDS(ON) Drain-Source On-State Resistance ④ VGS=-10V, ID=-15A -- 15 22 mΩ RDS(ON) Drain-Source On-State Resistance ④ VGS=-4.5V, ID=-10A -- 23 39 mΩ 800 1315 1800 pF 100 190 280 pF 70 135 200 pF -- 10.8 -- Ω -- 30 -- nC -- 4.5 -- nC -- 6 -- nC -- 9 -- ns V(BR)DSS IDSS Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-15V,VGS=0V, f=1MHz f=1MHz VDS=-15V,ID=-15A, VGS=-10V Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=-15A, -- 8 -- ns t d(off) Turn-Off Delay Time RG=3Ω, -- 192 -- ns tf Turn-Off Fall Time -- 62 -- ns VDD=-15V, VGS=-10V Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=-15A,VGS=0V -- -0.9 -1.2 V t rr Reverse Recovery Time Tj=25℃,Isd=-15A, -- 22 -- ns Qrr Reverse Recovery Charge -- 8 -- nC VGS=0V di/dt=-100A/μs NOTE: ① Repetitive rating; pulse width limited by max junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = -11A, VGS =-10V. Part not recommended for use above this value ③ The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. ④ Pulse width ≤ 300μs; duty cycle≤ 2%. Copyright Vanguard Semiconductor Co., Ltd Rev B – OCT, 2018 www.vgsemi.com VS3518AE -30V/-35A P-Channel Advanced Power MOSFET -ID, -Drain-Source Current (A) -VGS(TH), Gate -Source Voltage (V) Typical Characteristics -VDS,- Drain -Source Voltage (V) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Fig2. -VGS(TH) Gate -Source Voltage Vs.Tj Tc - Case Temperature (°C) Normalized On Resistance -ID, -Drain-Source Current (A) Fig2. Maximum Drain Current Vs.Case Temperature Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -ID,- Drain Current (A) Tj - Junction Temperature (°C) -ISD, -Reverse Drain Current (A) -VGS, -Gate -Source Voltage (V) -VSD, -Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Copyright Vanguard Semiconductor Co., Ltd Rev B – OCT, 2018 -VDS, -Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.vgsemi.com VS3518AE -30V/-35A P-Channel Advanced Power MOSFET C, Capacitance (pF) -VGS, -Gate-Source Voltage (V) Typical Characteristics -VDS , -Drain-Source Voltage (V) Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Thermal Resistance ZθJA Normalized Transient Fig7. Typical Capacitance Vs.Drain-Source Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig9. Threshold Voltage Vs. Temperature Fig10. Unclamped Inductive Test Circuit and Waveforms Copyright Vanguard Semiconductor Co., Ltd Rev B – OCT, 2018 Fig11. Switching Time Test Circuit and waveforms www.vgsemi.com VS3518AE -30V/-35A P-Channel Advanced Power MOSFET Marking Information Vs 3518AE XXXYWW 1st line： Vanguard Code（Vs） 2nd line：Part Number（3518AE） 3rd line：Date code （XXXYWW） XXX：Wafer Lot Number Y：Year Code，e.g. E means 2017 WW：Week Code Copyright Vanguard Semiconductor Co., Ltd Rev B – OCT, 2018 www.vgsemi.com VS3518AE -30V/-35A P-Channel Advanced Power MOSFET PDFN3333 Package Outline Data Symbol DIMENSIONS ( unit : mm ) Min Typ Max A 0.7 0.75 0.8 Notes: b 0.25 0.3 0.35 1. Follow JEDEC MO-240 variation CA. C 0.1 0.15 0.25 2. Dimensions "D1" and "E1" do NOT include mold flash D 3.25 3.35 3.45 protrusions or gate burrs. D1 3 3.1 3.2 3. Dimensions "D1" and "E1" include interterminal flash or D2 1.78 1.88 1.98 protrusion. Interterminal flash or protrusion shall not exceed D3 -- 0.13 -- E 3.2 3.3 3.4 E1 3 3.15 3.2 E2 2.39 2.49 2.59 0.65 BSC e H 0.3 0.39 0.5 L 0.3 0.4 0.5 L1 -- 0.13 -- θ -- 10° 12° M * * 0.15 * Not specified Copyright Vanguard Semiconductor Co., Ltd Rev B – OCT, 2018 0.25mm per side. Customer Service Sales and Service: sales@vgsemi.com Vanguard Semiconductor CO., LTD TEL: (86-755) -26902410 FAX: (86-755) -26907027 WEB: www.vgsemi.com www.vgsemi.com