BUK9K5R6-30EX

BUK9K5R6-30E Dual N-channel 30 V, 5.8 mΩ logic level MOSFET 2 September 2015 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • • Dual MOSFET Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications • • • • 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 - - 40 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 64 W VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11 - 4.7 5.8 mΩ - 9.2 - nC [1] Static characteristics FET1 and FET2 RDSon drain-source on-state resistance Dynamic characteristics FET1 and FET2 QGD gate-drain charge ID = 10 A; VDS = 24 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14 [1] Continuous current is limited by package BUK9K5R6-30E Nexperia Dual N-channel 30 V, 5.8 mΩ logic level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source1 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 6 D2 drain2 7 D1 drain1 8 D1 drain1 Simplified outline 8 7 6 Graphic symbol 5 D1 D1 S1 D2 D2 G1 S2 G2 mbk725 1 2 3 4 LFPAK56D (SOT1205) 6. Ordering information Table 3. Ordering information Type number Package BUK9K5R6-30E Name Description Version LFPAK56D Plastic single ended surface mounted package (LFPAK56D); 8 leads SOT1205 7. Marking Table 4. Marking codes Type number Marking code BUK9K5R6-30E 95E630 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 30 V VDGR drain-gate voltage RGS = 20 kΩ - 30 V VGS gate-source voltage Tj ≤ 175 °C; DC -10 10 V -15 15 V - 64 W Tj ≤ 175 °C; Pulsed [1][2] Ptot total power dissipation Tmb = 25 °C; Fig. 1 ID drain current Tmb = 25 °C; VGS = 5 V; Fig. 2 [3] - 40 A Tmb = 100 °C; VGS = 5 V; Fig. 2 [3] - 40 A BUK9K5R6-30E Product data sheet All information provided in this document is subject to legal disclaimers. 2 September 2015 © Nexperia B.V. 2017. All rights reserved 2 / 13 BUK9K5R6-30E Nexperia Dual N-channel 30 V, 5.8 mΩ logic level MOSFET Symbol Parameter Conditions Min Max Unit IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3 - 305 A Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C - 40 A - 305 A - 169 mJ Source-drain diode FET1 and FET2 IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C [3] Avalanche Ruggedness FET1 and FET2 EDS(AL)S non-repetitive drain-source avalanche energy ID = 40 A; Vsup ≤ 30 V; RGS = 50 Ω; [4][5] VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 4 [1] [2] [3] [4] [5] Accumulated Pulse duration up to 50 hours delivers zero defect ppm Significantly longer life times are achieved by lowering Tj and or VGS. Continuous current is limited by package Refer to application note AN10273 for further information Single-pulse avalanche rating limited by maximum junction temperature of 175 °C 03aa16 120 Pder (%) 003aak073 100 ID (A) 80 80 60 40 (1) 40 20 0 Fig. 1. 0 50 100 150 Tmb (°C) Normalized total power dissipation as a function of mounting base temperature BUK9K5R6-30E Product data sheet 0 200 0 25 50 75 100 125 150 175 Tmb (°C) 200 (1) Capped at 40A due to package Fig. 2. Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 2 September 2015 © Nexperia B.V. 2017. All rights reserved 3 / 13 BUK9K5R6-30E Nexperia Dual N-channel 30 V, 5.8 mΩ logic level MOSFET ID (A) 003aak072 103 Limit RDSon = VDS / ID tp = 10 us 102 100 us 10 DC 1 ms 1 10 ms 100 ms 10-1 10-1 Fig. 3. 1 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage IAL (A) 003aak074 102 (1) 10 (2) 1 (3) 10-1 10-3 Fig. 4. 10-2 10-1 1 tAL (ms) 10 Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - - 2.36 K/W Rth(j-a) thermal resistance from junction to ambient Minimum footprint; mounted on a printed circuit board - 95 - K/W BUK9K5R6-30E Product data sheet All information provided in this document is subject to legal disclaimers. 2 September 2015 © Nexperia B.V. 2017. All rights reserved 4 / 13 BUK9K5R6-30E Nexperia Dual N-channel 30 V, 5.8 mΩ logic level MOSFET 003aaj748 10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 P 0.02 δ= single shot Fig. 5. 10-5 10-4 10-3 10-2 T t tp 10-2 10-6 tp T 10-1 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 1.4 1.7 2.1 V 0.5 - - V - - 2.45 V VDS = 30 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA VDS = 30 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11 - 4.7 5.8 mΩ VGS = 5 V; ID = 10 A; Tj = 175 °C; - 8.9 11 mΩ - 3.9 4.7 mΩ Static characteristics FET1 and FET2 V(BR)DSS VGS(th) Fig. 9; Fig. 10 ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 9 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 9 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 11; Fig. 12 VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 11 Dynamic characteristics FET1 and FET2 QG(tot) total gate charge ID = 10 A; VDS = 24 V; VGS = 5 V; - 22.6 - nC QGS gate-source charge Tj = 25 °C; Fig. 13; Fig. 14 - 4.4 - nC BUK9K5R6-30E Product data sheet All information provided in this document is subject to legal disclaimers. 2 September 2015 © Nexperia B.V. 2017. All rights reserved 5 / 13 BUK9K5R6-30E Nexperia Dual N-channel 30 V, 5.8 mΩ logic level MOSFET Symbol Parameter Conditions Min Typ Max Unit QGD gate-drain charge - 9.2 - nC Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; - 1860 2480 pF Tj = 25 °C; Fig. 15 Coss output capacitance - 391 469 pF Crss reverse transfer capacitance - 231 316 pF td(on) turn-on delay time VDS = 24 V; RL = 2.4 Ω; VGS = 5 V; - 13.8 - ns tr rise time RG(ext) = 5 Ω; Tj = 25 °C - 25.2 - ns td(off) turn-off delay time - 30.1 - ns tf fall time - 22.4 - ns Source-drain diode FET1 and FET2 VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.78 1.2 V trr reverse recovery time IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; - 32.3 - ns Qr recovered charge VDS = 15 V; Tj = 25 °C - 26.7 - nC ID (A) 003aak066 40 10 V 003aak065 25 RDSon (mΩ) 4.5 V 3 V 32 20 VGS = 2.8 V 24 15 16 8 0 10 2.6 V 5 2.4 V 0 0.5 1 1.5 VDS (V) 0 2 Tj = 25 °C; tp = 300 μs Fig. 6. Fig. 7. Output characteristics; drain current as a function of drain-source voltage; typical values BUK9K5R6-30E Product data sheet 0 2 6 8 VGS (V) 10 Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 2 September 2015 4 © Nexperia B.V. 2017. All rights reserved 6 / 13 BUK9K5R6-30E Nexperia Dual N-channel 30 V, 5.8 mΩ logic level MOSFET 003aak064 150 ID (A) 003aah025 3 VGS(th) (V) 2.5 120 max 2 90 typ 1.5 60 min 1 30 0 Fig. 8. 0 1 0.5 Tj = 25°C 175°C 2 3 4 5 VGS (V) 0 -60 6 Transfer characteristics; drain current as a function of gate-source voltage; typical values 003aah026 10-1 Fig. 9. 0 60 120 003aak071 RDSon (mΩ) 10-2 180 Gate-source threshold voltage as a function of junction temperature 40 ID (A) Tj (° C) 2.6 V 2.8 V 30 min 10-3 typ max 20 10 3V -4 10 10-5 4.5 V VGS = 10 V 10-6 0 1 2 V GS (V) 0 3 Fig. 10. Sub-threshold drain current as a function of gate-source voltage BUK9K5R6-30E Product data sheet 0 8 16 24 32 ID (A) 40 Tj = 25 °C; tp = 300 μs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 2 September 2015 © Nexperia B.V. 2017. All rights reserved 7 / 13 BUK9K5R6-30E Nexperia Dual N-channel 30 V, 5.8 mΩ logic level MOSFET 003aaj812 2 VDS a ID 1.6 VGS(pl) 1.2 VGS(th) VGS 0.8 QGS2 QGS1 0.4 0 -60 0 60 120 Tj (°C) QGS QGD QG(tot) 003aaa508 Fig. 13. Gate charge waveform definitions 180 Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature VGS (V) 003aak068 10 003aak069 104 C (pF) Ciss 8 VDS = 14 V 103 6 Coss 4 24 V Crss 102 2 0 0 10 20 30 40 QG (nC) 10 10-1 50 Fig. 14. Gate-source voltage as a function of gate charge; typical values BUK9K5R6-30E Product data sheet 1 10 VDS (V) 102 Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 2 September 2015 © Nexperia B.V. 2017. All rights reserved 8 / 13 BUK9K5R6-30E Nexperia Dual N-channel 30 V, 5.8 mΩ logic level MOSFET IS (A) 003aak070 40 30 20 10 175°C 0 0 0.2 0.4 Tj = 25°C 0.6 0.8 1 VSD (V) 1.2 Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK9K5R6-30E Product data sheet All information provided in this document is subject to legal disclaimers. 2 September 2015 © Nexperia B.V. 2017. All rights reserved 9 / 13 BUK9K5R6-30E Nexperia Dual N-channel 30 V, 5.8 mΩ logic level MOSFET 11. Package outline Plastic single ended surface mounted package LFPAK56D; 8 leads E SOT1205 A A b1 c1 L1 mounting base D H D1 D2 L 1 2 3 e b (8x) 4 w X c A E1 E2 A1 C θ Lp detail X 0 2.5 A max 1.05 nom min 1.02 mm 5 mm scale Dimensions Unit y C D(1) D1(1) D2 (ref) E(1) E1(1) 4.4 0.25 0.30 4.70 4.55 3.5 5.30 1.8 0.85 4.1 0.19 0.24 4.45 4.35 3.4 4.95 1.6 0.60 A1 b b1 0.1 0.50 0.0 0.35 c c1 E2 e 1.27 H L L1 Lp 6.2 1.3 0.55 0.85 5.9 0.8 0.30 0.40 w y 0.25 0.1 Note 1. Plastic or metal protrusions of 0.2 mm maximum per side are not included. Outline version References IEC JEDEC JEITA θ 8° 0° sot1205_po European projection Issue date 14-08-21 14-10-28 SOT1205 Fig. 17. Package outline LFPAK56D (SOT1205) BUK9K5R6-30E Product data sheet All information provided in this document is subject to legal disclaimers. 2 September 2015 © Nexperia B.V. 2017. All rights reserved 10 / 13 BUK9K5R6-30E Nexperia Dual N-channel 30 V, 5.8 mΩ logic level MOSFET In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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BUK9K5R6-30E Product data sheet Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. All information provided in this document is subject to legal disclaimers. 2 September 2015 © Nexperia B.V. 2017. All rights reserved 11 / 13 BUK9K5R6-30E Nexperia Dual N-channel 30 V, 5.8 mΩ logic level MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BUK9K5R6-30E Product data sheet All information provided in this document is subject to legal disclaimers. 2 September 2015 © Nexperia B.V. 2017. All rights reserved 12 / 13 BUK9K5R6-30E Nexperia Dual N-channel 30 V, 5.8 mΩ logic level MOSFET 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Package outline ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 02 September 2015 BUK9K5R6-30E Product data sheet All information provided in this document is subject to legal disclaimers. 2 September 2015 © Nexperia B.V. 2017. All rights reserved 13 / 13