JST3401

JST3401 -30V,-4.2A P-Channel Mosfet FEATURES SOT-23 RDS(ON)≤ 63mΩ @VGS=-10V RDS(ON)≤ 67mΩ @VGS=-4.5V RDS(ON)≤ 85mΩ @VGS=-2.5V APPLICATIONS Load/Power Switching Interfacing Switching P-CHANNEL MOSFET MARKING Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current ID -4.2 Pulsed Drain Current IDM -12 Maximum Power Dissipation PD 0.4 W RθJA 313 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 Thermal Resistance from Junction to Ambient(t ≤5s) Unit V A ℃ 1／4 JST3401 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -30 -35 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.5 -0.9 -1.5 V Gate-source leakage IGSS VDS =0V, VGS =±12V ±100 nA Zero gate voltage drain current IDSS VDS =-30V, VGS =0V -1 µA Drain-source on-state resistance a RDS(on) VGS =-10V, ID =-4.2A 45 63 VGS =-4.5V, ID =-4A 49 67 60 85 -0.7 -1 VGS =-2.5V, ID =-1A Body diode voltage IS=-0.7A VSD mΩ V Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time Fall time 1050 VDS =-15V,VGS =0V,f =1MHz tr td(off) pF 127 85 VDS=-15V,VGS=-4.5V ID=-4A 9.5 nC 2 3 VDS=-15V, RL=3.6Ω, VGS=-10V,RGEN=6Ω tf 6.5 3.5 40 nS 13 Notes : a. Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b. Guaranteed by design, not subject to production testing. 2／4 JST3401 P-Channel -30V (D-S) MOSFET Typical Characteristics 3／4 JST3401 SOT-23 package SOT-23 Suggested Pad Layout 4／4