PMEG1201AESFYL

PMEG1201AESF 12 V, 0.1 A low VF MEGA Schottky barrier rectifier 13 February 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra small Chip-Scale Package (CSP). 2. Features and benefits • • • • • Average forward current IF(AV) ≤ 0.1 A Reverse voltage VR ≤ 12 V Low forward voltage typ. VF = 160 mV Low reverse current typ. IR = 240 µA Package height typ. 0.3 mm 3. Applications • • • • • Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Ultra high speed switching LED backlight for mobile application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IF(AV) average forward current δ = 0.5; f = 20 kHz; Tamb ≤ 115 °C; [1] Min Typ Max Unit - - 0.1 A - - 0.1 A square wave δ = 0.5; f = 20 kHz; Tsp ≤ 125 °C; square wave VR reverse voltage Tj = 25 °C - - 12 V VF forward voltage IF = 30 mA; tp ≤ 300 µs; δ ≤ 0.02; - 160 200 mV - 240 1000 µA Tj = 25 °C IR reverse current [1] VR = 5 V; Tj = 25 °C; pulsed Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Scan or click this QR code to view the latest information for this product PMEG1201AESF NXP Semiconductors 12 V, 0.1 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode Simplified outline Graphic symbol 1 1 2 2 sym001 Transparent top view DSN0603-2 (SOD962-2) [1] The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number PMEG1201AESF Package Name Description Version DSN0603-2 Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962-2 7. Marking Table 4. Marking codes Type number Marking code PMEG1201AESF 9 PMEG1201AESF Product data sheet All information provided in this document is subject to legal disclaimers. 13 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 14 PMEG1201AESF NXP Semiconductors 12 V, 0.1 A low VF MEGA Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 12 V IF forward current Tsp = 120 °C; δ = 1 - 0.14 A IF(AV) average forward current δ = 0.5; f = 20 kHz; Tamb ≤ 115 °C; - 0.1 A - 0.1 A [1] square wave δ = 0.5; f = 20 kHz; Tsp ≤ 125 °C; square wave IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 2 A IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave - 4 A Ptot total power dissipation Tamb ≤ 25 °C [2] - 325 mW [3] - 525 mW [1] - 950 mW Tj junction temperature - 125 °C Tamb ambient temperature -55 125 °C Tstg storage temperature -65 150 °C [1] [2] [3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 2 1 cm each. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] PMEG1201AESF Product data sheet Min Typ Max Unit [1][2] - - 310 K/W [1][3] - - 190 K/W [1][4] - - 105 K/W [5] - - 40 K/W [2] [3] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode [4] [5] 1 cm each. Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of anode tab. 2 All information provided in this document is subject to legal disclaimers. 13 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 14 PMEG1201AESF NXP Semiconductors 12 V, 0.1 A low VF MEGA Schottky barrier rectifier aaa-006823 103 duty cycle = Zth(j-a) (K/W) 1 0.75 102 0.5 0.33 0.25 0.1 0.2 0.05 0.02 0.01 0 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-006824 103 Zth(j-a) (K/W) duty cycle = 102 0.75 0.33 0.2 0.05 10 10-3 1 0.5 0.25 0.1 0.02 0.01 0 10-2 10-1 1 10 102 tp (s) 103 2 FR4 PCB, mounting pad for anode and cathode 1 cm each Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG1201AESF Product data sheet All information provided in this document is subject to legal disclaimers. 13 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 14 PMEG1201AESF NXP Semiconductors 12 V, 0.1 A low VF MEGA Schottky barrier rectifier 102 aaa-006825 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.2 0.25 0.1 0.05 0.02 0.01 0 10 10-3 10-2 10-1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG1201AESF Product data sheet All information provided in this document is subject to legal disclaimers. 13 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 14 PMEG1201AESF NXP Semiconductors 12 V, 0.1 A low VF MEGA Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)R reverse breakdown voltage IR = 1000 µA; tp = 300 µs; δ = 0.02; 12 - - V forward voltage IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02; - 20 60 mV - 70 110 mV - 130 170 mV - 150 190 mV - 160 200 mV - 210 250 mV VR = 5 V; Tj = 25 °C; pulsed - 240 1000 µA VR = 10 V; Tj = 25 °C; pulsed - 370 1500 µA VR = 12 V; Tj = 25 °C; pulsed - 430 2000 µA VR = 1 V; f = 1 MHz; Tj = 25 °C - 26 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 10 - pF IF = 200 mA; IR = 200 mA; - 2.2 - ns VF Tj = 25 °C Tj = 25 °C IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 20 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 30 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IR Cd trr reverse current diode capacitance reverse recovery time IR(meas) = 40 mA; Tj = 25 °C PMEG1201AESF Product data sheet All information provided in this document is subject to legal disclaimers. 13 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 14 PMEG1201AESF NXP Semiconductors 12 V, 0.1 A low VF MEGA Schottky barrier rectifier aaa-013228 1 IF (A) (2) (3) 10-1 aaa-013229 10-1 IR (A) 10-2 (1) (1) (2) (3) 10-3 (5) (4) 10-2 10-4 (4) 10-5 10-3 10-6 10-4 Fig. 4. 0 0.2 0.4 VF (V) 10-7 0.6 (5) 0 4 pulsed condition (1) Tj = 125 °C pulsed condition (1) Tj = 125 °C (2) Tj = 85 °C (2) Tj = 85 °C (3) Tj = 75 °C (3) Tj = 75 °C (4) Tj = 25 °C (4) Tj = 25 °C (5) Tj = −40 °C (5) Tj = −40 °C Forward current as a function of forward voltage; typical values Fig. 5. aaa-013230 50 8 Reverse current as a function of reverse voltage; typical values aaa-013231 20 (4) PF(AV) (mW) Cd (pF) (3) 16 40 12 VR (V) (2) 30 12 20 8 10 4 0 Fig. 6. 0 4 8 VR (V) 0 12 (1) 0 f = 1 MHz; Tamb = 25 °C Tj = 125 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig. 7. PMEG1201AESF Product data sheet 100 IF(AV) (mA) 150 Average forward power dissipation as a function of average forward current; typical values All information provided in this document is subject to legal disclaimers. 13 February 2015 50 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 14 PMEG1201AESF NXP Semiconductors 12 V, 0.1 A low VF MEGA Schottky barrier rectifier aaa-013232 250 PR(AV) (mW) (1) IF(AV) (mA) (1) 200 aaa-013233 150 (2) 100 (3) (2) 150 100 (3) 50 (4) (4) 50 0 0 4 8 VR (V) 0 12 Tj = 85 °C 50 Average reverse power dissipation as a function of reverse voltage; typical values aaa-013234 150 100 aaa-013235 (1) (2) (3) 50 (4) 50 (4) 100 Tamb (°C) 0 150 FR4 PCB, mounting pad for anode and cathode 50 100 Tamb (°C) 150 Tj = 125 °C 1 cm each Tj = 125 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 10. Average forward current as a function of ambient temperature; typical values Product data sheet 0 Ceramic PCB, Al2O3, standard footprint 2 PMEG1201AESF 150 Average forward current as a function of ambient temperature; typical values 100 (3) 50 Fig. 9. IF(AV) (mA) (2) 0 Tamb (°C) (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz 150 (1) IF(AV) (mA) 0 100 FR4 PCB, standard footprint Tj = 125 °C (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 Fig. 8. 0 Fig. 11. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 13 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 14 PMEG1201AESF NXP Semiconductors 12 V, 0.1 A low VF MEGA Schottky barrier rectifier aaa-013236 150 (1) IF(AV) (mA) 100 (2) (3) 50 (4) 0 0 50 100 Tsp (°C) 150 Tj = 125 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 12. Average forward current as a function of solder point temperature; typical values 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 13. Reverse recovery definition P tcy duty cycle δ = tp tcy tp t 006aac658 Fig. 14. Duty cycle definition PMEG1201AESF Product data sheet All information provided in this document is subject to legal disclaimers. 13 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 14 PMEG1201AESF NXP Semiconductors 12 V, 0.1 A low VF MEGA Schottky barrier rectifier The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. 12. Package outline 0.325 0.275 0.32 0.28 1 0.03 max 0.15 0.13 0.4 0.625 0.575 2 Dimensions in mm 0.25 0.23 14-12-03 Fig. 15. Package outline DSN0603-2 (SOD962-2) 13. Soldering Footprint information for reflow soldering of leadless ultra small package; 2 terminals SOD962-2 0.85 0.4 0.4 R0.025 (8×) 0.24 (2×) 0.14 (2×) 0.2 (2×) solder land solder land plus solder paste solder paste deposit solder resist Dimensions in mm sod962-2_fr Fig. 16. Reflow soldering footprint for DSN0603-2 (SOD962-2) PMEG1201AESF Product data sheet All information provided in this document is subject to legal disclaimers. 13 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 14 PMEG1201AESF NXP Semiconductors 12 V, 0.1 A low VF MEGA Schottky barrier rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG1201AESF v. 2 20150213 Product data sheet - PMEG1201AESF v. 1 Modifications: • PMEG1201AESF v. 1 20140714 PMEG1201AESF Product data sheet Product status changed Preliminary data sheet - All information provided in this document is subject to legal disclaimers. 13 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 14 PMEG1201AESF NXP Semiconductors 12 V, 0.1 A low VF MEGA Schottky barrier rectifier In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 13 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 14 PMEG1201AESF NXP Semiconductors 12 V, 0.1 A low VF MEGA Schottky barrier rectifier grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMEG1201AESF Product data sheet All information provided in this document is subject to legal disclaimers. 13 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 14 PMEG1201AESF NXP Semiconductors 12 V, 0.1 A low VF MEGA Schottky barrier rectifier 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 10 14 Revision history ................................................... 11 15 15.1 15.2 15.3 15.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 13 February 2015 PMEG1201AESF Product data sheet All information provided in this document is subject to legal disclaimers. 13 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 14 / 14